公开(公告)号：US5474667A

公开(公告)日：1995-12-12

申请号：US199627

申请日：1994-02-22

申请人： Steven D. Hurwitt ,  Tugrul Yasar ,  Bhola N. De ,  Jon S. Hsu

发明人： Steven D. Hurwitt ,  Tugrul Yasar ,  Bhola N. De ,  Jon S. Hsu

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： H01J37/3435 ,  C23C14/3407 ,  H01J37/3491

摘要： A sputtering target assembly in which the region of attachment between the sputtering target and the backing plate has varying stiffness, thereby reducing stresses in the target during sputtering. In the region of attachment, the backing plate has varying thickness, for example a smooth taper. Alternatively, the backing plate may include structures which affect the stiffness of the backing plate in the region of attachment. These structures may be defined by machining, molding or forging during manufacture of the backing plate, or by machining or drilling voids in the backing plate. As a second alternative, the bonding material used to attach the sputtering target and the backing plate may have a varying stiffness across the region of attachment.

摘要翻译： 溅射靶组件，其中溅射靶和背板之间的连接区域具有变化的刚度，从而在溅射期间降低靶中的应力。 在连接区域中，背板具有变化的厚度，例如平滑的锥度。 或者，背板可以包括在附接区域中影响背板的刚度的结构。 这些结构可以通过在背板的制造期间的机械加工，模制或锻造，或者通过机加工或钻出背板中的空隙来限定。 作为第二替代方案，用于附接溅射靶和背板的接合材料可以在连接区域上具有变化的刚度。

公开(公告)号：US5174875A

公开(公告)日：1992-12-29

申请号：US814320

申请日：1991-12-23

申请人： Steven D. Hurwitt ,  Arnold J. Aronson ,  Charles Van Nutt

发明人： Steven D. Hurwitt ,  Arnold J. Aronson ,  Charles Van Nutt

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/35 ,  H01J37/3405

摘要： A plasma confining magnetic field is generated over the sputtering region of a sputtering target with a critical field line which determines the shape of the plasma. The critical field line is progressively flattened over the course of the life of the target as the target erodes. Preferably, the magnet is configured with poles spaced around the portion of the target below the sputtering region to provide a magnetic field that flattens as its strength decreases. A regulated power supply maintains a regulated power level that is increased as the target erodes to maintain a constant deposition rate. The voltage delivered by the power supply is maintained at or above a constant level by progressively decreasing the current to an electromagnet to progressively reduce the field strength and flatten the field. As a result of the invention, the erosion groove of the target is broadened and the number of wafers coated by the target during its life is increased.

摘要翻译： 在溅射靶的溅射区域上产生等离子体限制磁场，其中临界场线确定等离子体的形状。 当目标侵蚀时，临界场线在目标的生命过程中逐渐变平。 优选地，磁体配置有在溅射区域下方的靶的部分周围的磁极，以提供当其强度降低时变平的磁场。 稳定的电源保持稳定的功率电平，随着目标腐蚀而保持恒定的沉积速率增加。 电源输出的电压通过逐渐减小到电磁铁的电流而保持在恒定水平以上，以逐渐降低场强并使场平坦化。 作为本发明的结果，目标的侵蚀槽变宽，并且在其寿命期间由靶涂覆的晶片的数量增加。

公开(公告)号：US4855033A

公开(公告)日：1989-08-08

申请号：US95100

申请日：1987-09-10

申请人： Steven D. Hurwitt

发明人： Steven D. Hurwitt

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： H01J37/3435 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3497

摘要： An improved cathode and sputtering target design for sputter coating, permitting operation with larger cathodes and at higher power levels than heretofore possible. The cathode and target assembly includes a cathode body, a target holder, and a sputtering target. The cathode body functions as a magnetic pole piece, a portion of the cooling system, and a mechanical stabilizer for the target. The target holder also provides cooling, by means of cooling passages and by intermeshing cooling means in contact with the target. The sputtering target has an arch-like face that promotes a controlled plastic deformation in a preselected direction, so that heat-induced expansion during operation results in the target being urged into forceful, intimate contact with at least two cooled surfaces.

摘要翻译： 用于溅射涂层的改进的阴极和溅射靶设计，允许以更大的阴极操作并且具有比迄今为止更高的功率水平的操作。 阴极和靶组件包括阴极体，靶保持器和溅射靶。 阴极体用作磁极片，冷却系统的一部分和用于靶的机械稳定器。 目标支架还通过冷却通道和与目标物接触的相互啮合的冷却装置提供冷却。 溅射靶具有拱形表面，其在预选方向上促进受控的塑性变形，使得在操作期间的热引起的膨胀导致目标被迫与至少两个冷却表面有力地紧密接触。

公开(公告)号：US4198283A

公开(公告)日：1980-04-15

申请号：US957698

申请日：1978-11-06

申请人： Walter H. Class ,  George J. Unterkofler ,  Steven D. Hurwitt

发明人： Walter H. Class ,  George J. Unterkofler ,  Steven D. Hurwitt

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3423 ,  H01J37/3408 ,  H01J37/3435

摘要： A magnetron cathode assembly for use in a cathode sputtering apparatus includes a support means for a rectangular frame-like annular target and spaced apart inner and outer pole pieces fastened to the support member and providing a rectangular annular channel for mounting the target in electrically and thermally conductive contact with the support means. Preferably, the target is a set of four straight bars shaped at the ends to assemble together as a rectangular frame. Target bars having a symmetrical hourglass cross section with overhanging flanged side portions adjacent to front and rear faces are adapted to be reversibly clamped to the support means by the inner and outer poles for simple and rapid replacement in the field, said hourglass shape providing maximum utilization of target material.

摘要翻译： 用于阴极溅射装置的磁控管阴极组件包括用于矩形框状环状靶的支撑装置和紧固到支撑构件的间隔开的内极和外极片，并提供矩形环形通道，用于将电极和热安装 与支撑装置导电接触。 优选地，目标是在端部处成形为四个直杆的组合，以将其组装成矩形框架。 具有对称沙漏横截面的目标杆具有与前后表面相邻的凸出的凸缘侧部分，适于通过内外极杆可逆地夹紧到支撑装置上，以便在现场进行简单和快速的更换，所述沙漏形状提供最大的利用率 的目标材料。

公开(公告)号：US06224724B1

公开(公告)日：2001-05-01

申请号：US09119291

申请日：1998-07-20

申请人： Thomas J. Licata ,  Steven D. Hurwitt

发明人： Thomas J. Licata ,  Steven D. Hurwitt

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  C23C14/022 ,  C23C14/35 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/347 ,  H01L21/28556

摘要： An apparatus and method for compensating the process-related asymmetries produced in physical vapor processing of a surface. The apparatus and method may be used on either a substrate when sputtering material from a source or when using an ionized physical vapor deposition (IPVD) apparatus to either deposit a film onto or remove material from a substrate. A compensating magnet is configured and positioned to produce a compensating magnetic field. The compensating magnetic is positioned to offset the effects of chamber and process-related asymmetries, particularly those that affect the distribution of plasma processing on a substrate where the plasma has been otherwise symmetrically produced. Assymetries about an axis of the substrate, for example, are corrected, in, for example, systems such as sputter coating machines where a rotating magnet cathode or other such technique produces an initially symmetrical plasma. Asymmetrical non-uniformities in deposited films are reduced to an acceptable amount and substrates may be cleaned in situ prior to metallization.

摘要翻译： 一种用于补偿在表面的物理蒸汽处理中产生的与工艺有关的不对称的装置和方法。 当从源溅射材料时或者当使用离子化物理气相沉积（IPVD）装置将薄膜沉积在衬底上或从衬底移除材料时，该装置和方法可以用于衬底上。 补偿磁体被配置和定位以产生补偿磁场。 补偿磁性被定位以抵消室和工艺相关不对称性的影响，特别是影响等离子体对称地产生的衬底上的等离子体处理分布的影响。 例如，在例如诸如溅射镀膜机的系统中校正关于衬底的轴线的部分，其中旋转磁体阴极或其它这样的技术产生初始对称的等离子体。 沉积膜中的不对称不均匀性降低到可接受的量，并且可以在金属化之前原位清洁衬底。

公开(公告)号：US5632869A

公开(公告)日：1997-05-27

申请号：US845854

申请日：1992-03-03

申请人： Steven D. Hurwitt ,  Charles Van Nutt

发明人： Steven D. Hurwitt ,  Charles Van Nutt

IPC分类号： C23C14/34

CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/3491

摘要： A sputtering target is pretextured, prior to being subjected to the initial sputter precleaning and use in a sputter processing apparatus, by artificially roughening the sputtering surface of the target to produce a texture which functions, when used in the sputter coating of substrates, in a manner equivalent to the surface of a target roughened by an hour or more of a sputter burn-in process. The surface is textured by the machining of grooves or other irregular microstructure therein, by chemical etching, by mechanical abrading, or by another means other than sputter processing. A 0.05 to 3.0 millimeter texture size such as achieved with annular V-grooves 0.025 inches deep and spaced at 0.0625 inches is preferred.

摘要翻译： 在溅射处理装置中进行初始溅射预清洗和使用之前，通过人造地粗糙化目标的溅射表面以产生当用于基板的溅射涂覆中时起作用的纹理 相当于粗糙化一小时以上的溅射老化过程的靶的表面。 通过化学蚀刻，机械研磨或除溅射处理以外的其它方式，通过加工凹槽或其它不规则微结构来表面被纹理化。 优选0.05至3.0毫米的纹理尺寸，例如用0.025英寸深的0.025英寸的环形V形槽和0.0625英寸的间距来实现的。

公开(公告)号：US5237756A

公开(公告)日：1993-08-24

申请号：US573845

申请日：1990-08-28

申请人： Steven D. Hurwitt

发明人： Steven D. Hurwitt

IPC分类号： C23C14/56 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67017 ,  C23C14/564 ,  H01L21/67739 ,  Y10S156/916

摘要： A pressure sealed chamber such as a load lock for a apparatus for processing substrates is provided with a guide plate spaced from a substrate supported therein so as to form a gap which covers the substrate surface to be protected from particulate contamination. During the filling of the chamber and during the evacuation of the chamber, by either pumping or venting, clean gas is introduced through an orifice in the center of the plate so as to flow outwardly from the edge of the gap at a pressure sufficient to deflect or otherwise reduce the number of turbulent gas borne particulates in the chamber from entering the gap and contaminating the surface to be protected of the substrate. During the filling of the chamber, all or some of the gas filling the chamber is introduced through the gap. During the evacuation of the chamber, gas is introduced through the gap at a flow rate less that of the evacuating gas.

摘要翻译： 压力密封室，例如用于处理衬底的设备的负载锁，设置有与支撑在其中的衬底间隔开的引导板，以形成覆盖衬底表面以防止颗粒污染的间隙。 在室的填充期间和在室的排空期间，通过泵送或排放，清洁气体通过板的中心的孔口被引入，以便在足够偏压的压力下从间隙的边缘向外流动 或以其他方式减少腔室中的湍流气体颗粒的数量，从而进入间隙并污染待保护基底的表面。 在室的填充期间，填充室的全部或一些气体通过间隙被引入。 在室的排空过程中，气体以比排气减少的流量通过间隙引入。

公开(公告)号：US4581118A

公开(公告)日：1986-04-08

申请号：US461022

申请日：1983-01-26

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Lin I

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Lin I

IPC分类号： C23C14/36 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31 ,  C23C14/50

CPC分类号： H01J37/3405 ,  C23C14/351

摘要： A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate support face of the electrode body, with each of its poles adjacent to the pole piece electrode body with each of its poles adjacent to the of like polarity of the electrode, flattens the magnetic field adjacent to the electrode support surface to produce a thin plasma of substantially uniform thickness close to the electrode surface.

摘要翻译： 用于等离子体处理设备的基板支撑电极具有书形棱柱体，其包含在每个端部具有凸缘状极片的磁芯，以提供缠绕在电极体上的纵向磁场。 与电极体的基板支撑面间隔开的辅助场成形磁体，其每个磁极与极片电极体相邻，其极点与电极的相似极性相邻，使与磁极相邻的磁场平坦化 电极支撑表面以产生接近电极表面的基本上均匀厚度的薄等离子体。

公开(公告)号：US4422896A

公开(公告)日：1983-12-27

申请号：US342976

申请日：1982-01-26

申请人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill ,  Marvin K. Hutt

发明人： Walter H. Class ,  Steven D. Hurwitt ,  Michael L. Hill ,  Marvin K. Hutt

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32623 ,  C23F4/00 ,  H01J37/3266 ,  H01J37/3405

摘要： Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.

摘要翻译： 公开了用于等离子体处理密封室中的衬底的方法和装置，其中具有留下支撑件的力线的磁场延伸穿过衬底的表面并重新进入支撑件以将衬底暴露表面包围在磁性电子 捕捉字段。 调节施加到基板支撑件上的电压以产生与基板表面紧密相邻的致密辉光放电，以与其进行化学反应。