公开(公告)号：US08785769B2

公开(公告)日：2014-07-22

申请号：US13395110

申请日：2010-05-14

申请人： Zhijun Li ,  Hanming Li ,  Ting Liu ,  Qianhu Wei ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Shicong Deng ,  Kai Liu ,  Ning Cao ,  Xiong Wu ,  Yuhua Zhang ,  Dingxie Gu ,  Weicai Zhou ,  Peihong Zhou ,  Zhenqiang Li ,  Ying Lou ,  Huiwen He

发明人： Zhijun Li ,  Hanming Li ,  Ting Liu ,  Qianhu Wei ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Shicong Deng ,  Kai Liu ,  Ning Cao ,  Xiong Wu ,  Yuhua Zhang ,  Dingxie Gu ,  Weicai Zhou ,  Peihong Zhou ,  Zhenqiang Li ,  Ying Lou ,  Huiwen He

IPC分类号： H01R4/66

CPC分类号： H02G7/22 ,  H02G7/205

摘要： A method for vertically grounding and leading down form an inner side of a composite pole tower and pole tower thereof, wherein the method includes the following steps: extending an upper metal cross arm from an extended line of at least one side of a ground wire cross arm which is made of metal, vertically leading down a ground down-leading wire from a distal end of the upper metal cross arm, connecting the ground down-leading wire to the pole tower via a lower metal cross arm at a distance under a lower lead, and grounding the ground down-leading wire along a tower body of the pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is selectively directly connected to the metal pipe via the lower metal cross arm. The upper metal cross arm and the lower cross arm are able to provide a distance between the ground down-leading wire and the pole tower. The method enhances the ability of bearing lightning flashover, increases the insulating intensity to lightning impact, and prevents burning to composite insulator by power-flow current after lightning flash over. And also the method is easy and simple for application.

摘要翻译： 一种用于垂直接地和引导的方法形成复合极塔及其极塔的内侧，其中该方法包括以下步骤：从地线十字架的至少一侧的延伸线延伸上金属横臂 由金属制成的臂，从上金属横臂的远端垂直地向下引导地面下降的导线，通过下金属横臂将下方的导线连接到杆塔，距离较低的下方 引导并沿着塔塔的塔体将地面下降的导线接地，其中当塔体的下部是金属管时，地下导线被选择性地通过下部的金属管直接连接到金属管 金属十字架 上金属横臂和下横梁能够提供地下导线和极塔之间的距离。 该方法提高了雷电闪络的能力，提高了雷击冲击的绝缘强度，防雷击后通过潮流电流防止燃烧复合绝缘子。 而且该方法简单易用。

公开(公告)号：US08785768B2

公开(公告)日：2014-07-22

申请号：US13395103

申请日：2010-05-05

申请人： Hanming Li ,  Zhijun Li ,  Qianhu Wei ,  Ting Liu ,  Shicong Deng ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Weicai Zhou ,  Kai Liu ,  Yuhua Zhang ,  Xiong Wu ,  Ning Cao ,  Dingxie Gu ,  Peihong Zhou ,  Huiwen He ,  Ying Lou ,  Zhenqiang Li

发明人： Hanming Li ,  Zhijun Li ,  Qianhu Wei ,  Ting Liu ,  Shicong Deng ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Weicai Zhou ,  Kai Liu ,  Yuhua Zhang ,  Xiong Wu ,  Ning Cao ,  Dingxie Gu ,  Peihong Zhou ,  Huiwen He ,  Ying Lou ,  Zhenqiang Li

IPC分类号： H01R4/66

CPC分类号： H02G7/20 ,  H01R4/66 ,  H02G1/02 ,  H02G13/00

摘要： A method for vertically grounding and leading down form an outer side of a composite pole tower and pole tower thereof, wherein the method includes the following steps: extending an upper metal cross arm from an extended line of at least one side of a ground wire cross arm, vertically leading down a ground down-leading wire from a distal end of the upper metal cross arm, connecting the ground down-leading wire to the pole tower via a lower metal cross arm at a distance under a lower lead, and grounding the ground down-leading wire along a tower body of the pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is selectively directly connected to the metal pipe via the lower metal cross arm. The method facilitates in compressing the width of the transmission corridor to a maximum extent as well as designing a lightning protection, preventing the ground down-leading wire from short-circuiting with the tower body, and realizing the insulation function of the composite material tower body. The manner of using unilateral ground down-leading wire saves material, and is economical and simple in structure.

摘要翻译： 一种用于垂直接地和向下的方法形成复合极塔及其极塔的外侧，其中该方法包括以下步骤：从地线交叉的至少一侧的延伸线延伸上金属横臂 从上金属横臂的远端垂直向下引导地面下降的导线，通过下导线下方一段距离的下金属横臂将地下导线连接到极塔，并将 沿着塔架的塔体进行地面下降的导线，其中当塔体的下部是金属管时，地下导线通过下金属横臂选择性地直接连接到金属管。 该方法有利于最大程度地压缩传输走廊的宽度，并设计防雷，防止地面引导线与塔体短路，实现复合材料塔体的绝缘功能 。 使用单边地下导线的方式节省材料，结构经济，结构简单。

公开(公告)号：US08735244B2

公开(公告)日：2014-05-27

申请号：US13098840

申请日：2011-05-02

申请人： Michael P. Chudzik ,  Min Dai

发明人： Michael P. Chudzik ,  Min Dai

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28194

摘要： A method of forming a dielectric stack devoid of an interfacial layer includes subjecting an exposed interfacial layer provided on a semiconductor material to a low pressure thermal anneal process for a predetermined time period at a temperature of about 900° C. to about 1000° C. with an inert gas purge. A semiconductor structure is also disclosed, with a dielectric stack devoid of an interfacial layer.

摘要翻译： 形成没有界面层的电介质堆叠的方法包括在约900℃至约1000℃的温度下将设置在半导体材料上的暴露的界面层进行低压热退火处理预定时间段。 用惰性气体吹扫。 还公开了一种没有界面层的电介质叠层的半导体结构。

公开(公告)号：US08519648B2

公开(公告)日：2013-08-27

申请号：US13189440

申请日：2011-07-22

申请人： Gabriel Gallegos-Lopez ,  Min Dai ,  Brian A. Welchko

发明人： Gabriel Gallegos-Lopez ,  Min Dai ,  Brian A. Welchko

IPC分类号： H02P21/14

CPC分类号： H02P21/0089 ,  H02P21/06 ,  H02P29/662

摘要： Methods and apparatus are provided for rotor and stator temperature compensation for field weakening current. The method comprises generating a phase voltage feed back signal Vph based in part on pre-defined optimal current commands (ID* and IQ*) received by the IPM, generating a phase voltage command (Vphcmd) based in part on a temperature of a magnetic rotor and stator of the IPM, and generating a phase voltage error (Verror) by subtracting the phase voltage feed back signal (Vph) from the phase voltage command (Vphcmd). The method further comprises generating a d-axis command current correction value (ΔId) and a q-axis command current correction value (ΔIq) from the phase voltage error (Verror); and adjusting the pre-defined optimal current commands (ID* and IQ*) by the d-axis and the q-axis command current correction values (ΔId and ΔIq).

摘要翻译： 提供了用于磁场弱化电流的转子和定子温度补偿的方法和装置。 该方法包括基于由IPM接收的预定义的最佳电流指令（ID *和IQ *）产生相电压反馈信号Vph，产生部分基于磁性温度的相电压指令（Vphcmd） 转子和定子，并通过从相电压指令（Vphcmd）减去相电压反馈信号（Vph）产生相电压误差（Verror）。 该方法还包括从相位电压误差（Verror）产生d轴指令电流校正值（DeltaId）和q轴指令电流校正值（ΔIq）; 并且通过d轴和q轴指令电流校正值（DeltaId和ΔIq）来调节预定义的最佳电流指令（ID *和IQ *）。

公开(公告)号：US20130082332A1

公开(公告)日：2013-04-04

申请号：US13249643

申请日：2011-09-30

申请人： Jinping Liu ,  Min Dai ,  Ju Youn Kim ,  Michael P. Chudzik ,  Jedon Kim ,  Sungkee Han

发明人： Jinping Liu ,  Min Dai ,  Ju Youn Kim ,  Michael P. Chudzik ,  Jedon Kim ,  Sungkee Han

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L21/823842 ,  H01L21/28185 ,  H01L21/823857 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

摘要： Semiconductor devices with replacement gate electrodes are formed with different materials in the work function layers. Embodiments include forming first and second removable gates on a substrate, forming first and second pairs of spacers on opposite sides of the first and second removable gates, respectively, forming a hardmask layer over the second removable gate, removing the first removable gate, forming a first cavity between the first pair of spacers, forming a first work function material in the first cavity, removing the hardmask layer and the second removable gate, forming a second cavity between the second pair of spacers, and forming a second work function material, different from the first work function material, in the second cavity.

摘要翻译： 具有替换栅电极的半导体器件在功函数层中由不同的材料形成。 实施例包括在衬底上形成第一和第二可移除栅极，分别在第一和第二可移除栅极的相对侧上形成第一和第二对间隔物，在第二可移除栅极上形成硬掩模层，去除第一可移除栅极， 在所述第一对间隔件之间形成第一空腔，在所述第一空腔中形成第一功函数材料，去除所述硬掩模层和所述第二可移除栅极，在所述第二对间隔件之间形成第二空腔，形成第二功函数材料， 从第一功能材料，在第二腔。

公开(公告)号：US20110307561A1

公开(公告)日：2011-12-15

申请号：US12815053

申请日：2010-06-14

申请人： QIANG GAO ,  Min Dai ,  Qi Xue

发明人： QIANG GAO ,  Min Dai ,  Qi Xue

IPC分类号： G06F15/16

CPC分类号： H04H20/42 ,  H04H20/72 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/168

摘要： Embodiments provide bandwidth efficient mechanisms for delivering rich media content, such as webpages, to receiver devices via a multimedia broadcast network. Content, such as selected webpages, is broadcast as disassembled content elements via the broadcast network. To enable reception, the disassembled content elements are broadcast according to a broadcast schedule that is communicated in an overhead content description flow, such as a catalog file. Receiver devices receive the catalog file and use the metadata information to selectively receive disassembled content and store the content elements in memory. When a user requests access to the content (e.g., a webpage via a web browser), an application operating in the receiver device assembles the requested content from the previously received and stored disassembled content elements, and passes the assembled webpage to a using or rendering application.

摘要翻译： 实施例提供了用于经由多媒体广播网络将富媒体内容（例如网页）传送到接收机设备的带宽有效的机制。 诸如所选网页的内容通过广播网络被广播为反汇编的内容元素。 为了能够接收，根据在诸如目录文件的开销内容描述流中传送的广播调度来广播反转的内容元素。 接收器设备接收目录文件并使用元数据信息来选择性地接收反汇编的内容并将内容元素存储在存储器中。 当用户请求访问内容（例如，通过网络浏览器的网页）时，在接收机设备中操作的应用程序从先前接收和存储的反汇编的内容元素中组合所请求的内容，并将组装的网页传递到使用或呈现 应用。

公开(公告)号：US09165510B2

公开(公告)日：2015-10-20

申请号：US13329024

申请日：2011-12-16

申请人： Min Dai ,  Ali Iranli ,  Chia-Yuan Teng

发明人： Min Dai ,  Ali Iranli ,  Chia-Yuan Teng

IPC分类号： G09G3/30 ,  G09G3/34

CPC分类号： G09G3/3406 ,  G09G2320/0247 ,  G09G2320/0646 ,  G09G2320/0653 ,  G09G2320/103 ,  G09G2340/16 ,  G09G2360/16

摘要： The techniques of the disclosure are directed to reducing power consumption in a device through adaptive backlight level (ABL) scaling. The techniques may utilize a temporal approach in implementing the ABL scaling to adjust the backlight level of a display for a current video frame in a sequence of video frames presented on the display. The techniques may include receiving an initial backlight level adjustment for the current video frame and determining whether to adjust the backlight level adjustment for the current video frame based on a historical trend. The techniques may also determine the historical trend of backlight level adjustments between the current video frame and one or more preceding video frames in the sequence.

摘要翻译： 本公开的技术旨在通过自适应背光级（ABL）缩放来降低设备中的功耗。 这些技术可以利用实现ABL缩放的时间方法来调整显示器上呈现的视频帧序列中的当前视频帧的显示器的背光级。 这些技术可以包括接收针对当前视频帧的初始背光级调整，并且基于历史趋势确定是否调整当前视频帧的背光级调整。 这些技术还可以确定当前视频帧与序列中的一个或多个先前视频帧之间的背光级调整的历史趋势。

公开(公告)号：US08836037B2

公开(公告)日：2014-09-16

申请号：US13584156

申请日：2012-08-13

申请人： Takashi Ando ,  Min Dai ,  Martin M. Frank ,  Barry P. Linder ,  Shahab Siddiqui

发明人： Takashi Ando ,  Min Dai ,  Martin M. Frank ,  Barry P. Linder ,  Shahab Siddiqui

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L27/088

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/28202 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/518

摘要： A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters.

摘要翻译： 有限数量的Hi-K材料的原子层沉积（ALD）循环，然后沉积层间电介质并施加另外的Hi-K材料并且可选但优选的退火提供了增加的Hi-K材料含量和增加的输入的击穿电压 与输入/输出（I / O）晶体管相比，与同一芯片或晶圆上形成的逻辑晶体管相比，同时提供I / O和逻辑晶体管的反型层的可扩展性，而不会明显地影响性能或偏置温度不稳定性（BTI）参数。

公开(公告)号：US20140042546A1

公开(公告)日：2014-02-13

申请号：US13584156

申请日：2012-08-13

申请人： Takashi Ando ,  Min Dai ,  Martin M. Frank ,  Barry P. Linder ,  Shahab Siddiqui

发明人： Takashi Ando ,  Min Dai ,  Martin M. Frank ,  Barry P. Linder ,  Shahab Siddiqui

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L27/088

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/28202 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/518

摘要： A limited number of cycles of atomic layer deposition (ALD) of Hi-K material followed by deposition of an interlayer dielectric and application of further Hi-K material and optional but preferred annealing provides increased Hi-K material content and increased breakdown voltage for input/output (I/O) transistors compared with logic transistors formed on the same chip or wafer while providing scalability of the inversion layer of the I/O and logic transistors without significantly compromising performance or bias temperature instability (BTI) parameters.

摘要翻译： 有限数量的Hi-K材料的原子层沉积（ALD）循环，然后沉积层间电介质并施加另外的Hi-K材料并且可选但优选的退火提供了增加的Hi-K材料含量和增加的输入的击穿电压 与输入/输出（I / O）晶体管相比，与同一芯片或晶圆上形成的逻辑晶体管相比，同时提供I / O和逻辑晶体管的反型层的可扩展性，而不会明显地影响性能或偏置温度不稳定性（BTI）参数。

公开(公告)号：US20140001570A1

公开(公告)日：2014-01-02

申请号：US13537101

申请日：2012-06-29

申请人： MaryJane Brodsky ,  Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Yanfeng Wang ,  Jinping Liu

发明人： MaryJane Brodsky ,  Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Yanfeng Wang ,  Jinping Liu

IPC分类号： H01L27/088 ,  H01L21/31

CPC分类号： H01L21/02321 ,  H01L21/28194 ,  H01L21/3115 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/517

摘要： A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer and a dopant metal layer and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer. The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.

摘要翻译： 复合高介电常数（high-k）栅极电介质包括掺杂的高k栅极电介质和未掺杂的高k栅极电介质的堆叠。 可以通过提供第一高k电介质材料层和掺杂剂金属层的堆叠来形成掺杂的高k栅极电介质，并且对叠层进行退火以引起掺杂剂金属扩散到第一高k电介质材料层中。 通过随后沉积第二高k电介质材料层形成未掺杂的高k栅极电介质。 复合高k栅极电介质可以提供增加的栅极 - 漏极氧化物厚度，而不增加反转氧化物厚度。