公开(公告)号：US20110307561A1

公开(公告)日：2011-12-15

申请号：US12815053

申请日：2010-06-14

申请人： QIANG GAO ,  Min Dai ,  Qi Xue

发明人： QIANG GAO ,  Min Dai ,  Qi Xue

IPC分类号： G06F15/16

CPC分类号： H04H20/42 ,  H04H20/72 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/168

摘要： Embodiments provide bandwidth efficient mechanisms for delivering rich media content, such as webpages, to receiver devices via a multimedia broadcast network. Content, such as selected webpages, is broadcast as disassembled content elements via the broadcast network. To enable reception, the disassembled content elements are broadcast according to a broadcast schedule that is communicated in an overhead content description flow, such as a catalog file. Receiver devices receive the catalog file and use the metadata information to selectively receive disassembled content and store the content elements in memory. When a user requests access to the content (e.g., a webpage via a web browser), an application operating in the receiver device assembles the requested content from the previously received and stored disassembled content elements, and passes the assembled webpage to a using or rendering application.

摘要翻译： 实施例提供了用于经由多媒体广播网络将富媒体内容（例如网页）传送到接收机设备的带宽有效的机制。 诸如所选网页的内容通过广播网络被广播为反汇编的内容元素。 为了能够接收，根据在诸如目录文件的开销内容描述流中传送的广播调度来广播反转的内容元素。 接收器设备接收目录文件并使用元数据信息来选择性地接收反汇编的内容并将内容元素存储在存储器中。 当用户请求访问内容（例如，通过网络浏览器的网页）时，在接收机设备中操作的应用程序从先前接收和存储的反汇编的内容元素中组合所请求的内容，并将组装的网页传递到使用或呈现 应用。

公开(公告)号：US09478173B2

公开(公告)日：2016-10-25

申请号：US13219416

申请日：2011-08-26

申请人： Reza Safaee-Rad ,  Min Dai ,  Milivoje Aleksic

发明人： Reza Safaee-Rad ,  Min Dai ,  Milivoje Aleksic

IPC分类号： G09G3/34 ,  G09G3/20 ,  H04N9/69

CPC分类号： G09G3/3406 ,  G09G3/2003 ,  G09G2320/0209 ,  G09G2320/0242 ,  G09G2320/0271 ,  G09G2320/0276 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2320/0666 ,  G09G2320/0693 ,  G09G2360/16 ,  H04N9/69

摘要： The techniques of this disclosure are applicable to backlight display devices. For such devices, the backlight may have different backlight intensity settings in order to promote power conservation. The techniques of this disclosure may apply different adjustments to the display, depending on the backlight intensity setting. In one example, different color correction matrices may be applied for different backlight settings in order to achieve desirable adjustments in the device at the different backlight settings. The adjustments described herein may address chrominance shifts due to different backlight settings as well as cross-talk between color channels. The techniques may also be applicable to organic light emitting diode (OLED) displays that have different luminance settings, and some described techniques may be applicable to displays that have static or fixed luminance output.

摘要翻译： 本公开的技术可应用于背光显示装置。 对于这样的设备，背光可以具有不同的背光强度设置，以便促进节电。 根据背光强度设置，本公开的技术可以对显示器应用不同的调整。 在一个示例中，可以将不同的颜色校正矩阵应用于不同的背光设置，以便在不同背光设置下实现设备中期望的调整。 本文描述的调整可以解决由于不同的背光设置以及色彩通道之间的串扰造成的色度偏移。 这些技术还可以应用于具有不同亮度设置的有机发光二极管（OLED）显示器，并且一些所描述的技术可以应用于具有静态或固定亮度输出的显示器。

公开(公告)号：US08809962B2

公开(公告)日：2014-08-19

申请号：US13218988

申请日：2011-08-26

申请人： Yanxiang Liu ,  Jinping Liu ,  Min Dai ,  Xiaodong Yang

发明人： Yanxiang Liu ,  Jinping Liu ,  Min Dai ,  Xiaodong Yang

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/6653 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66628

摘要： Scaled transistors with reduced parasitic capacitance are formed by replacing a high-k dielectric sidewall spacer with a SiO2 or low-k dielectric sidewall spacer. Embodiments include transistors comprising a trench silicide layer spaced apart from a replacement metal gate electrode, and a layer of SiO2 or low-k material on a side surface of the replacement metal gate electrode facing the trench silicide layer. Implementing methodologies may include forming an intermediate structure comprising a removable gate with nitride spacers, removing the removable gate, forming a layer of high-k material on the nitride spacers, forming a layer of metal nitride on the high-k material, filling the opening with insulating material and then removing a portion thereof to form a recess, removing the metal nitride layers and layers of high-k material, depositing a layer of SiO2 or low-k material, and forming a replacement metal gate in the remaining recess.

摘要翻译： 具有减小的寄生电容的可缩放晶体管通过用SiO 2或低k电介质侧壁间隔物代替高k电介质侧壁间隔物而形成。 实施例包括晶体管，其包括与替代金属栅电极间隔开的沟槽硅化物层，以及位于替代金属栅电极的面对沟槽硅化物层的侧表面上的SiO 2或低k材料层。 实施方法可以包括形成包括具有氮化物间隔物的可移除栅极的中间结构，去除可移除栅极，在氮化物间隔物上形成高k材料层，在高k材料上形成金属氮化物层，填充开口 用绝缘材料，然后去除其一部分以形成凹槽，去除金属氮化物层和高k材料层，沉积SiO 2或低k材料层，并在剩余的凹槽中形成替换金属栅极。

公开(公告)号：US08809152B2

公开(公告)日：2014-08-19

申请号：US13300146

申请日：2011-11-18

申请人： MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

发明人： MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

IPC分类号： H01L21/336

CPC分类号： H01L29/518 ,  H01L21/28255 ,  H01L27/0922 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/78

摘要： A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region.

摘要翻译： 一种半导体器件，包括在所述半导体衬底的沟道区上包括栅极结构的含锗衬底。 栅极结构可以包括与含锗衬底的上表面直接接触的氧化硅层，与氧化硅层直接接触的至少一个高k栅介质层和直接与锗氧化物层直接接触的至少一个栅极导体 与高k栅介质层接触。 氧化硅层和含锗衬底的上表面之间的界面基本上不含氧化锗。 源极区域和漏极区域可以存在于沟道区域的相对侧上。

公开(公告)号：US20130330843A1

公开(公告)日：2013-12-12

申请号：US13490740

申请日：2012-06-07

申请人： Michael P. Chudzik ,  Min Dai ,  Jinping Liu ,  Paul A. Ronsheim ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui

发明人： Michael P. Chudzik ,  Min Dai ,  Jinping Liu ,  Paul A. Ronsheim ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui

IPC分类号： H01L21/66 ,  G06F17/50

CPC分类号： H01L29/513 ,  H01L21/28185 ,  H01L21/28202 ,  H01L22/12 ,  H01L22/26 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.

摘要翻译： 公开了一种形成半导体器件的方法。 该方法包括：在基板上形成电介质区域; 在包括氨（NH 3）在内的环境中退火电介质区域; 在退火期间监测所述衬底和所述电介质区域中的至少一个的氮峰; 并根据氮峰的监测来调整环境参数。

公开(公告)号：US20120329230A1

公开(公告)日：2012-12-27

申请号：US13164891

申请日：2011-06-21

申请人： Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Jinping Liu

发明人： Michael P. Chudzik ,  Min Dai ,  Joseph F. Shepard, JR. ,  Shahab Siddiqui ,  Jinping Liu

IPC分类号： H01L21/336 ,  H01L21/31

CPC分类号： H01L21/02052 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28238

摘要： A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free environment at a temperature of 1000° C. or greater to provide a bare surface of the semiconductor substrate, and introducing an oxygen-containing gas at a flow rate to the bare surface of the semiconductor substrate for a first time period at the temperature of 1000° C. The temperature is then reduced to room temperature during a second time period while maintaining the flow rate of the oxygen containing gas to provide a silicon-containing oxide layer having a thickness ranging from 0.5 Å to 10 Å.

摘要翻译： 一种制造含硅氧化物层的方法，包括在半导体衬底的表面上提供化学氧化物层，在1000℃或更高的温度下在无氧环境中除去化学氧化物层，以提供裸露 在半导体衬底的表面上，以1000℃的温度将半导体衬底的裸露表面的含氧气体首次引入半导体衬底的裸露表面。然后在第二时间内将温度降至室温 同时保持含氧气体的流速，从而提供厚度范围从0.5到10的含硅氧化物层。

公开(公告)号：US20120056911A1

公开(公告)日：2012-03-08

申请号：US13219416

申请日：2011-08-26

申请人： Reza Safaee-Rad ,  Min Dai ,  Milivoje Aleksic

发明人： Reza Safaee-Rad ,  Min Dai ,  Milivoje Aleksic

IPC分类号： G09G5/10

CPC分类号： G09G3/3406 ,  G09G3/2003 ,  G09G2320/0209 ,  G09G2320/0242 ,  G09G2320/0271 ,  G09G2320/0276 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2320/0666 ,  G09G2320/0693 ,  G09G2360/16 ,  H04N9/69

摘要： The techniques of this disclosure are applicable to backlight display devices. For such devices, the backlight may have different backlight intensity settings in order to promote power conservation. The techniques of this disclosure may apply different adjustments to the display, depending on the backlight intensity setting. In one example, different color correction matrices may be applied for different backlight settings in order to achieve desirable adjustments in the device at the different backlight settings. The adjustments described herein may address chrominance shifts due to different backlight settings as well as cross-talk between color channels. The techniques may also be applicable to organic light emitting diode (OLED) displays that have different luminance settings, and some described techniques may be applicable to displays that have static or fixed luminance output.

摘要翻译： 本公开的技术可应用于背光显示装置。 对于这样的设备，背光可以具有不同的背光强度设置，以便促进节电。 根据背光强度设置，本公开的技术可以对显示器应用不同的调整。 在一个示例中，可以将不同的颜色校正矩阵应用于不同的背光设置，以便在不同背光设置下实现设备中期望的调整。 本文描述的调整可以解决由于不同的背光设置以及色彩通道之间的串扰造成的色度偏移。 这些技术还可以应用于具有不同亮度设置的有机发光二极管（OLED）显示器，并且一些所描述的技术可以应用于具有静态或固定亮度输出的显示器。

公开(公告)号：US09099461B2

公开(公告)日：2015-08-04

申请号：US13490740

申请日：2012-06-07

申请人： Michael P. Chudzik ,  Min Dai ,  Jinping Liu ,  Paul A. Ronsheim ,  Joseph F. Shepard, Jr. ,  Shahab Siddiqui

发明人： Michael P. Chudzik ,  Min Dai ,  Jinping Liu ,  Paul A. Ronsheim ,  Joseph F. Shepard, Jr. ,  Shahab Siddiqui

IPC分类号： H01L21/66 ,  H01L29/51 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L21/28185 ,  H01L21/28202 ,  H01L22/12 ,  H01L22/26 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.

摘要翻译： 公开了一种形成半导体器件的方法。 该方法包括：在基板上形成电介质区域; 在包括氨（NH 3）在内的环境中退火电介质区域; 在退火期间监测所述衬底和所述电介质区域中的至少一个的氮峰; 并根据氮峰的监测来调整环境参数。

公开(公告)号：US08859895B2

公开(公告)日：2014-10-14

申请号：US13395112

申请日：2010-05-05

申请人： Zhusen Sun ,  Qiang Zhang ,  Minghua Li ,  Zhijun Li ,  Ting Liu ,  Feng Huo ,  Min Dai ,  Kai Liu ,  Xiong Wu ,  Dingxie Gu ,  Peihong Zhou ,  Ying Lou ,  Zhenqiang Li ,  Huiwen He

发明人： Zhusen Sun ,  Qiang Zhang ,  Minghua Li ,  Zhijun Li ,  Ting Liu ,  Feng Huo ,  Min Dai ,  Kai Liu ,  Xiong Wu ,  Dingxie Gu ,  Peihong Zhou ,  Ying Lou ,  Zhenqiang Li ,  Huiwen He

IPC分类号： H02G13/00 ,  H01R4/66 ,  H02G7/20 ,  H02G3/04

CPC分类号： H02G7/205 ,  H02G3/0481

摘要： A method for vertically grounding and leading down form a center of a composite pole tower includes the following steps: extending a ground down-leading wire from a center of a ground wire cross arm which is made of metal and is positioned on top of the pole tower, wherein the ground down-leading wire is vertically leaded down to the earth form the center of the composite pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is extended from the center of the composite material and is directly connected to the metal pipe. The method utilizes the advantage of the insulating intensity of the wall of the composite pole tower and enhances the insulating intensity of the transmission line on impact of lightning. The ground down-leading wires are prevented from short-circuiting with the tower body of the composite pole tower, so that advantage of the insulating property of the composite material of the pole towers is realized. Since the ground down-leading wire is penetrated through center of the pole tower, so that the ground down-leading wires are not exposed and are prevented from destroying by external force. And also the method is easy and simple for application.

摘要翻译： 将复合极塔的中心垂直接地和引导向下的方法包括以下步骤：将地面下降的导线从金属制成的地线交叉臂的中心延伸并位于极的顶部 塔，其中地下引线垂直引导到复合极塔的中心的地面，其中当塔体的下部是金属管时，地下导线从中心延伸 的复合材料，并直接连接到金属管。 该方法利用了复合极塔壁绝缘强度的优点，提高了雷击冲击下输电线路的绝缘强度。 防止地面下降的导线与复合极塔的塔体发生短路，从而实现了极塔复合材料绝缘性能的优点。 由于地面下降的导线穿过极塔的中心，使得地面下降的导线不被暴露，并且防止被外力破坏。 而且该方法简单易用。

公开(公告)号：US08785769B2

公开(公告)日：2014-07-22

申请号：US13395110

申请日：2010-05-14

申请人： Zhijun Li ,  Hanming Li ,  Ting Liu ,  Qianhu Wei ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Shicong Deng ,  Kai Liu ,  Ning Cao ,  Xiong Wu ,  Yuhua Zhang ,  Dingxie Gu ,  Weicai Zhou ,  Peihong Zhou ,  Zhenqiang Li ,  Ying Lou ,  Huiwen He

发明人： Zhijun Li ,  Hanming Li ,  Ting Liu ,  Qianhu Wei ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Shicong Deng ,  Kai Liu ,  Ning Cao ,  Xiong Wu ,  Yuhua Zhang ,  Dingxie Gu ,  Weicai Zhou ,  Peihong Zhou ,  Zhenqiang Li ,  Ying Lou ,  Huiwen He

IPC分类号： H01R4/66

CPC分类号： H02G7/22 ,  H02G7/205

摘要： A method for vertically grounding and leading down form an inner side of a composite pole tower and pole tower thereof, wherein the method includes the following steps: extending an upper metal cross arm from an extended line of at least one side of a ground wire cross arm which is made of metal, vertically leading down a ground down-leading wire from a distal end of the upper metal cross arm, connecting the ground down-leading wire to the pole tower via a lower metal cross arm at a distance under a lower lead, and grounding the ground down-leading wire along a tower body of the pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is selectively directly connected to the metal pipe via the lower metal cross arm. The upper metal cross arm and the lower cross arm are able to provide a distance between the ground down-leading wire and the pole tower. The method enhances the ability of bearing lightning flashover, increases the insulating intensity to lightning impact, and prevents burning to composite insulator by power-flow current after lightning flash over. And also the method is easy and simple for application.

摘要翻译： 一种用于垂直接地和引导的方法形成复合极塔及其极塔的内侧，其中该方法包括以下步骤：从地线十字架的至少一侧的延伸线延伸上金属横臂 由金属制成的臂，从上金属横臂的远端垂直地向下引导地面下降的导线，通过下金属横臂将下方的导线连接到杆塔，距离较低的下方 引导并沿着塔塔的塔体将地面下降的导线接地，其中当塔体的下部是金属管时，地下导线被选择性地通过下部的金属管直接连接到金属管 金属十字架 上金属横臂和下横梁能够提供地下导线和极塔之间的距离。 该方法提高了雷电闪络的能力，提高了雷击冲击的绝缘强度，防雷击后通过潮流电流防止燃烧复合绝缘子。 而且该方法简单易用。