摘要:
A programmable lookup table optionally provides two input signals and two output signals to an interconnect structure of a programmable integrated circuit when programmed to function as a random access memory (RAM). An integrated circuit includes an interconnect structure and a N-input lookup table (LUT) having input and output terminals coupled to the interconnect structure. The LUT can be configured to function as a single-bit wide RAM (e.g., a (2**N)×1 RAM) having N input address signals coupled to the interconnect structure and one output signal coupled to the interconnect structure, or as a multi-bit wide RAM (e.g., a (2**(N−1))×2 RAM) having fewer than N (e.g., N−1) input address signals coupled to the interconnect structure and at least two output signals coupled to the interconnect structure. Optionally, the LUT can also be configured as shift register logic, e.g., a 2**(N−1)-bit shift register or two 2**(N−2)-bit shift registers.
摘要:
The invention comprises an FPGA having a plurality of input reference voltages and/or output voltage supplies. In one embodiment, two or more differential amplifiers in the same configurable input buffer use different input reference voltages. According to a second aspect of the invention, the I/O pad line is configurably connected to the input reference voltage line, so that any configurable Input/Output Block (IOB) can be used to supply the input reference voltage. According to a third aspect of the invention, the reference input of an I/O is configurably connected to any of two or more input reference voltage lines. According to another aspect of the invention, a single input reference voltage and/or a single output voltage supply is applied to each IOB, with the IOBs grouped into sets. Each set of IOBs has a separate input reference voltage and/or a separate output voltage supply.
摘要:
The invention comprises an FPGA having a plurality of input reference voltages and/or output voltage supplies. In one embodiment, two or more differential amplifiers in the same configurable input buffer use different input reference voltages. According to a second aspect of the invention, the I/O pad line is configurably connected to the input reference voltage line, so that any configurable Input/Output Block (IOB) can be used to supply the input reference voltage. According to a third aspect of the invention, the reference input of an I/O is configurably connected to any of two or more input reference voltage lines. According to another aspect of the invention, a single input reference voltage and/or a single output voltage supply is applied to each IOB, with the IOBs grouped into sets. Each set of IOBs has a separate input reference voltage and/or a separate output voltage supply.
摘要:
A 6-input LUT architecture includes 64 memory cells, which store 64 corresponding data values. A set of 64 transmission gates is configured to receive the 64 four data values. A first input signal is applied to the set of 64 transmission gates, thereby routing 32 of the 64 data values. A set of 32 transmission gates is coupled to receive the 32 data values routed by the set of 64 transmission gates. A second input signal is applied to the set of 32 transmission gates, thereby routing 16 of the 32 data values. A 16:1 multiplexer receives the sixteen data values routed by the set of 32 transmission gates. Third, fourth, fifth and sixth input signals are applied to the 16:1 multiplexer, thereby routing one of the 16 data values as the output of the LUT.
摘要:
The invention comprises an FPGA having a plurality of input reference voltages and/or output voltage supplies. In one embodiment, two or more differential amplifiers in the same configurable input buffer use different input reference voltages. According to a second aspect of the invention, the I/O pad line is configurably connected to the input reference voltage line, so that any configurable Input/Output Block (IOB) can be used to supply the input reference voltage. According to a third aspect of the invention, the reference input of an I/O is configurably connected to any of two or more input reference voltage lines. According to another aspect of the invention, a single input reference voltage and/or a single output voltage supply is applied to each IOB, with the IOBs grouped into sets. Each set of IOBs has a separate input reference voltage and/or a separate output voltage supply.
摘要:
A programmable logic block provides N-bit and M-bit (e.g., (N/2)-bit) lookahead functionality for carry chains traversing the logic block, N and M being integers greater than one. An exemplary programmable logic block includes four carry multiplexers that together form a 4-bit lookahead carry chain. The 4-bit lookahead carry chain also provides a 2-bit lookahead output after the second carry multiplexer. Alternatively, the last two bits of the 4-bit lookahead carry chain can be used as a 2-bit lookahead carry chain. In one embodiment, the programmable logic block also includes four function generators associated with the four carry multiplexers. Each function generator drives a select terminal of the associated carry multiplexer. The 4-bit and 2-bit carry chains can be programmably coupled to an interconnect structure of the PLD at the carry out output terminals. In some embodiments, an initialization value can also be provided to the 4-bit and 2-bit carry chains.
摘要:
SEU-hardening series resistances loads are formed within the gate structures of cross-coupled inverters of a latch. For some embodiments, the gate contact for the input of each cross-coupled inverter has a sufficiently high resistance to provide the SEU-hardening series resistance. For other embodiments, a conductive trace layer coupled to the input of each cross-coupled inverter includes a high-resistivity portion that provides the SEU-hardening series resistance.
摘要:
Structures and methods of adding metal-to-metal capacitors to static memory cells to reduce susceptibility to SEUs. The addition of metal-to-metal capacitors is particularly suited to programmable logic devices (PLDs), because of the relatively large area required to implement an effective metal-to-metal capacitor, compared (for example) to the size of the static memory cell itself. The configuration memory cells of PLDs are typically placed next to other logic (e.g., the configurable elements controlled by the configuration memory cells) that can be overlain by the metal-to-metal capacitors. Therefore, metal-to-metal capacitors can be used in PLD configuration memory cells where they might be impractical in simple memory arrays. However, metal-to-metal capacitors can also be applied to integrated circuits other than PLDs.
摘要:
Structures and methods of reducing the susceptibility of programmable logic device (PLD) configuration memory cells to single event upsets (SEUs) by selectively adding metal-to-metal capacitors thereto. By adding capacitance to storage nodes in a memory cell, the susceptibility of the memory cell to SEUs is reduced. However, the performance of the memory cell also suffers. In PLD configuration memory cells, performance is not the most important factor. Therefore, for example, SEU-reducing capacitors can be selectively added to the PLD configuration memory cells while omitting the capacitors from user storage elements (e.g., block RAM) within the PLD. Thus, performance of the user storage elements is not adversely affected. Further, the use of metal-to-metal capacitors is well-suited to the configuration memory cells of a PLD, because these memory cells typically have additional area available for the capacitors above the programmable logic elements controlled by the associated configuration memory cells.
摘要:
SEU-hardening series resistances loads are formed within the gate structures of cross-coupled inverters of a latch. For some embodiments, the gate contact for the input of each cross-coupled inverter has a sufficiently high resistance to provide the SEU-hardening series resistance. For other embodiments, a conductive trace layer coupled to the input of each cross-coupled inverter includes a high-resistivity portion that provides the SEU-hardening series resistance.