Polishing systems
    11.
    发明申请
    Polishing systems 有权
    抛光系统

    公开(公告)号:US20090318063A1

    公开(公告)日:2009-12-24

    申请号:US12456546

    申请日:2009-06-18

    申请人: Sudhanshu Misra

    发明人: Sudhanshu Misra

    摘要: Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.

    摘要翻译: 本文描述的是用于抛光表面的抛光装置,抛光配方和聚合物基底以及相关方法。 各种设备,配方,基底和方法可以用于涉及金属和/或含金属的表面如半导体晶片的抛光的应用中。 本文所述的装置,制剂,聚合物基材和相关方法可以不使用研磨剂而使用,并且在一些情况下,没有垫表面相对待抛光表面的机械摩擦。 因此,由于这种机械抛光工艺,抛光表面上的缺陷可能会降低。

    Grooved CMP pad
    12.
    发明申请
    Grooved CMP pad 有权
    凹槽CMP垫

    公开(公告)号:US20090311955A1

    公开(公告)日:2009-12-17

    申请号:US12381709

    申请日:2009-03-16

    IPC分类号: B24D7/18

    CPC分类号: B24B37/26

    摘要: CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

    摘要翻译: 描述具有新颖凹槽结构的CMP垫。 例如,这里描述的是包括主槽,辅助凹槽,凹槽图案中心和可选的端子槽的CMP垫。 CMP垫可以由聚氨酯或聚(尿烷 - 尿素)制成,并且其中产生的凹槽可以通过由成型,激光书写,水射流切割,3D印刷,热成型,真空成型 ,微接触印刷,热冲压及其混合物。

    Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof
    13.
    发明申请
    Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof 有权
    定制CMP抛光垫及其制作和使用方法

    公开(公告)号:US20090053976A1

    公开(公告)日:2009-02-26

    申请号:US11884829

    申请日:2006-02-21

    CPC分类号: B24B37/24 B33Y80/00

    摘要: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

    摘要翻译: 本申请涉及用于基板的化学机械平面化(CMP)的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格,其中规格包括(但不限于)被抛光材料,芯片设计和结构,芯片密度和图案密度,设备平台和使用的浆料类型。 这些垫可以设计成具有长或短范围顺序的专门的聚合物纳米结构,其允许分子水平调节实现优异的热机械特性。 更具体地,可以设计和制造焊盘,使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外,这些垫可以被设计成通过表面工程,通过添加固体润滑剂来调节摩擦系数,并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率,嵌入式研磨剂,抛光表面上的新型凹槽,用于原位生产的浆料输送,以及用于端点检测的透明区域。

    Semiconductor device having an interconnect layer with a plurality of layout regions having substantially uniform densities of active interconnects and dummy fills
    14.
    发明授权
    Semiconductor device having an interconnect layer with a plurality of layout regions having substantially uniform densities of active interconnects and dummy fills 有权
    具有互连层的半导体器件具有多个具有基本上均匀的有源互连和虚拟填充密度的布局区域

    公开(公告)号:US06683382B2

    公开(公告)日:2004-01-27

    申请号:US10147384

    申请日:2002-05-16

    IPC分类号: H01L2710

    摘要: A semiconductor device with an interconnect layer having a plurality of layout regions of active interconnects and dummy fills for uniform planarization. In one embodiment, the device will have at least one interconnect layer with a plurality of layout regions overlying the semiconductor substrate. Each layout region will comprise an active interconnect feature region and a dummy fill feature region adjacent thereto for facilitating uniformity of planarization during manufacturing. Each dummy fill region in each layout region will have a different density with respect to other dummy fill regions in other layout regions, so that the combined density of the active interconnect feature region and the dummy fill feature region in a layout region will be substantially uniform with respect to a similar combined density in each of the other layout regions.

    摘要翻译: 具有互连层的半导体器件具有多个有源互连的布局区域和用于均匀平坦化的虚拟填充。 在一个实施例中,该器件将具有至少一个具有覆盖半导体衬底的多个布局区域的互连层。 每个布局区域将包括有源互连特征区域和与其相邻的虚拟填充特征区域,以便于制造过程中平坦化的均匀性。 每个布局区域中的每个虚拟填充区域相对于其他布局区域中的其它虚拟填充区域将具有不同的密度,使得布局区域中的有源互连特征区域和虚拟填充特征区域的组合密度将基本均匀 相对于每个其他布局区域中的类似的组合密度。

    Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method
    17.
    发明授权
    Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权
    抛光液,抛​​光法,半导体器件及半导体器件的制造方法

    公开(公告)号:US06439972B2

    公开(公告)日:2002-08-27

    申请号:US09894117

    申请日:2001-06-28

    IPC分类号: B24B2118

    CPC分类号: B24B37/044 C09G1/02

    摘要: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

    摘要翻译: 一种包含分布有机相和连续水相的抛光液,每相包含至少一种络合剂。 水相中也分散有磨粒。 在抛光过程中产生的反应产物与水相络合剂相互作用以形成水溶性金属络合物,水溶性金属络合物扩散到有机/水界面,在那里它们释放水相中的络合剂分子并产生与有机物相互作用的金属离子 相络合剂形成有机金属络合物。 进一步公开了一种利用抛光液的抛光方法,半导体器件和半导体器件制造方法。

    Polishing pads from closed-cell elastomer foam
    18.
    发明授权
    Polishing pads from closed-cell elastomer foam 有权
    来自闭孔弹性体泡沫的抛光垫

    公开(公告)号:US06368200B1

    公开(公告)日:2002-04-09

    申请号:US09516836

    申请日:2000-03-02

    IPC分类号: B24D1100

    CPC分类号: B24B37/24

    摘要: A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.

    摘要翻译: 由闭孔弹性体泡沫形成的抛光垫包括垫内的气泡群。 当由于抛光而抛光垫磨损并且抛光表面后退时,新形成的抛光表面包括由新露出的气泡形成的孔。 孔隙接收和保留抛光浆料并有助于化学机械抛光过程。 不需要衬垫调节,因为在抛光期间表面后退时,在衬垫表面上不断产生新的孔。 用于形成抛光垫的方法包括将气泡注入用于形成垫的粘性弹性体材料中。 选择工艺条件以在固化和固化过程步骤期间保持弹性体材料内的气泡。

    Grooved CMP pads
    19.
    发明授权
    Grooved CMP pads 有权
    沟槽CMP垫

    公开(公告)号:US09375823B2

    公开(公告)日:2016-06-28

    申请号:US14874179

    申请日:2015-10-02

    IPC分类号: B24B37/26

    CPC分类号: B24B37/26

    摘要: CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

    摘要翻译: 描述具有新颖凹槽结构的CMP垫。 例如,这里描述的是包括主槽,辅助凹槽,凹槽图案中心和可选的端子槽的CMP垫。 CMP垫可以由聚氨酯或聚(尿烷 - 尿素)制成,并且其中产生的凹槽可以通过由成型,激光书写,水射流切割,3D印刷,热成型,真空成型 ,微接触印刷,热冲压及其混合物。

    CUSTOMIZED POLISHING PADS FOR CMP AND METHODS OF FABRICATION AND USE THEREOF
    20.
    发明申请
    CUSTOMIZED POLISHING PADS FOR CMP AND METHODS OF FABRICATION AND USE THEREOF 有权
    用于CMP的定制抛光垫及其制造方法及其使用方法

    公开(公告)号:US20150065020A1

    公开(公告)日:2015-03-05

    申请号:US14489177

    申请日:2014-09-17

    IPC分类号: B24B37/26 B24D11/04

    CPC分类号: B24B37/26 B24D7/14 B24D11/04

    摘要: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

    摘要翻译: 本申请涉及用于基板的化学机械平面化(CMP)的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格,其中规格包括(但不限于)被抛光材料,芯片设计和结构,芯片密度和图案密度,设备平台和使用的浆料类型。 这些焊盘可以设计成具有长或短范围顺序的专门的聚合物纳米结构,其允许分子水平调谐实现优异的机械特性。 更具体地,可以设计和制造焊盘,使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外,这些垫可以被设计成通过表面工程,通过添加固体润滑剂来调节摩擦系数,并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率,嵌入式研磨剂,抛光表面上的新型凹槽,用于原位生产的浆料输送,以及用于端点检测的透明区域。