摘要:
Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.
摘要:
CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要:
The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.
摘要:
A semiconductor device with an interconnect layer having a plurality of layout regions of active interconnects and dummy fills for uniform planarization. In one embodiment, the device will have at least one interconnect layer with a plurality of layout regions overlying the semiconductor substrate. Each layout region will comprise an active interconnect feature region and a dummy fill feature region adjacent thereto for facilitating uniformity of planarization during manufacturing. Each dummy fill region in each layout region will have a different density with respect to other dummy fill regions in other layout regions, so that the combined density of the active interconnect feature region and the dummy fill feature region in a layout region will be substantially uniform with respect to a similar combined density in each of the other layout regions.
摘要:
The present invention provides a composite polishing pad, comprising. In an advantageous embodiment, the composite polishing pad includes a polishing pad member comprising a material having a predetermined hardness and an annular support member underlying a periphery of the polishing pad member, the annular support member having a hardness less than the predetermined hardness of the polishing pad member.
摘要:
A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要:
A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要:
A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.
摘要:
CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要:
The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.