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    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    11.
    发明申请
    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    相变存储器件及其制造方法

    公开(公告)号：US20080135825A1

    公开(公告)日：2008-06-12

    申请号：US11936503

    申请日：2007-11-07

    申请人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

    发明人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

    IPC分类号： H01L47/00 ,  H01L21/8239

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1666

    摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。 下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。

    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    12.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20090184307A1

    公开(公告)日：2009-07-23

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L21/06 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态 作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态 非晶态。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

    Phase change memory device and method of fabricating the same
    13.
    发明授权
    Phase change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07977674B2

    公开(公告)日：2011-07-12

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L29/08 ,  H01L29/18 ,  H01L29/02 ,  H01L47/00 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为 稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变 州。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

    Method and apparatus for managing profile information of mobile terminal in mobile communications system
    16.
    发明授权
    Method and apparatus for managing profile information of mobile terminal in mobile communications system 有权
    移动通信系统中用于管理移动终端的简档信息的方法和装置

    公开(公告)号：US08380192B2

    公开(公告)日：2013-02-19

    申请号：US12668223

    申请日：2008-03-11

    申请人： Sung Han Kim ,  Jong Hong Jeon ,  Seung Yun Lee

    发明人： Sung Han Kim ,  Jong Hong Jeon ,  Seung Yun Lee

    IPC分类号： H04W4/00

    CPC分类号： H04W8/22

    摘要： A method for managing profile information of a mobile terminal in a mobile communications system includes: registering profile information of the mobile terminal at a central system via a local system, the profile information having dynamic profile information and static profile information; and registering DB (database) information of an external local system using a same profile format as that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal. The method further includes registering DB information of another external local system using a profile format different from that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal.

    摘要翻译： 一种用于在移动通信系统中管理移动终端的简档信息的方法包括：通过本地系统在中央系统处登记移动终端的简档信息，该简档信息具有动态简档信息和静态简档信息; 以及使用与中央系统中使用的相同的简档格式来登记外部本地系统的DB（数据库）信息，从而管理移动终端的动态简档信息和静态简档信息。 该方法还包括使用不同于中央系统中使用的简档格式来登记另一外部本地系统的DB信息，从而管理移动终端的动态简档信息和静态简档信息。

    USER ADAPTIVE GESTURE RECOGNITION METHOD AND USER ADAPTIVE GESTURE RECOGNITION SYSTEM
    17.
    发明申请
    USER ADAPTIVE GESTURE RECOGNITION METHOD AND USER ADAPTIVE GESTURE RECOGNITION SYSTEM 审中-公开
    用户自适应姿态识别方法和用户自适应语音识别系统

    公开(公告)号：US20100275166A1

    公开(公告)日：2010-10-28

    申请号：US12745800

    申请日：2008-08-29

    申请人： Jong Hong Jeon ,  Seung Yun Lee ,  Sung Han Kim ,  Kang Chan Lee

    发明人： Jong Hong Jeon ,  Seung Yun Lee ,  Sung Han Kim ,  Kang Chan Lee

    IPC分类号： G06F3/033

    CPC分类号： G06F3/017 ,  G06F3/0346 ,  G06F2200/1638 ,  H04M1/00

    摘要： The present invention relates to a user adaptive gesture recognition method and a user adaptive gesture recognition system. The present invention relates to a user adaptive gesture recognition method and a user adaptive gesture recognition system that, by using a terminal equipped with an acceleration sensor, can drive mobile application software in the terminal or can process a function of an application program for browsing to be displayed on the terminal based on acceleration information. Accordingly, the user gesture can be recognized and processed by using an acceleration sensor installed in a mobile apparatus. In addition, the user adaptive gesture can be stored in the mobile apparatus by using the acceleration sensor, and thus a mobile application can be easily utilized with a simple gesture.

    摘要翻译： 本发明涉及用户自适应手势识别方法和用户自适应手势识别系统。 本发明涉及一种用户自适应手势识别方法和用户自适应手势识别系统，其通过使用配备有加速度传感器的终端可以驱动终端中的移动应用软件，或者可以处理用于浏览的应用程序的功能 根据加速度信息显示在终端上。 因此，可以通过使用安装在移动装置中的加速度传感器来识别和处理用户手势。 此外，用户自适应手势可以通过使用加速度传感器存储在移动装置中，因此可以用简单的手势容易地利用移动应用程序。

    Method of fabricating SiGe Bi-CMOS device
    19.
    发明授权
    Method of fabricating SiGe Bi-CMOS device 失效

    公开(公告)号：US07115459B2

    公开(公告)日：2006-10-03

    申请号：US11283012

    申请日：2005-11-18

    申请人： Hyun Cheol Bae ,  Seung Yun Lee ,  Sang Hun Kim ,  Jin Yeong Kang

    发明人： Hyun Cheol Bae ,  Seung Yun Lee ,  Sang Hun Kim ,  Jin Yeong Kang

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/8249

    摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.

    Image photographing device and control method thereof
    20.
    发明授权
    Image photographing device and control method thereof 有权
    图像拍摄装置及其控制方法

    公开(公告)号：US09066006B2

    公开(公告)日：2015-06-23

    申请号：US13596373

    申请日：2012-08-28

    申请人： Seung Yun Lee ,  Yi Lee Seo ,  Ji Young Yun ,  Isaac Lee

    发明人： Seung Yun Lee ,  Yi Lee Seo ,  Ji Young Yun ,  Isaac Lee

    IPC分类号： H04N5/222 ,  H04N5/225 ,  G03B17/18 ,  H04N5/232

    CPC分类号： H04N5/23216 ,  H04N5/23222

    摘要： Disclosed herein are an image photographing device that includes a display unit displaying a preview image and a control method thereof. The image photographing device includes a judgment unit that judges whether or not lens blind has occurred and a photographing control unit that executes photographing after a predetermined time following an input of a photographing execution command has elapsed, if the judgment unit judges that lens blind has occurred. Even if a user shields a lens by his/her hand during a process of touching the screen of the display unit or pressing a photographing button to execute photographing, photographing is executed after the user's hand has moved out of the visual field of the lens, and thus an image desired by the user may be obtained without disturbance due to lens blind.

    摘要翻译： 这里公开了一种图像拍摄装置，其包括显示预览图像的显示单元及其控制方法。 图像拍摄装置包括判断单元，判断单元是否已经发生了镜头遮挡;以及拍摄控制单元，如果判断单元判断出镜头失真已经发生，则在经过了拍摄执行命令的输入之后的预定时间之后执行拍摄的拍摄控制单元 。 即使用户在触摸显示单元​​的屏幕或按压拍摄按钮执行拍摄的过程中用手遮住透镜，在用户的手已经移出透镜的视场之后执行拍摄， 因此可以获得用户所期望的图像，而不会由于镜头遮挡而产生干扰。