公开(公告)号：US07858914B2

公开(公告)日：2010-12-28

申请号：US11942847

申请日：2007-11-20

申请人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

发明人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/217

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14643

摘要： Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.

摘要翻译： 降低CMOS图像传感器中的暗电流和热像素的方法和装置。 像素装置包括能够产生暗电流的光电传感器，通过电荷转移晶体管耦合到光传感器的浮动扩散区域，连接在浮置扩散区域和阵列像素电源电压之间的静止晶体管。 当从像素采样像素信号时，阵列电源电压在第一和第二电压之间变化。

公开(公告)号：US20070045679A1

公开(公告)日：2007-03-01

申请号：US11211651

申请日：2005-08-26

申请人： Jeffrey McKee ,  Richard Mauritzson

发明人： Jeffrey McKee ,  Richard Mauritzson

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

摘要： A pixel cell array architecture having ion implant regions as isolation regions between adjacent active areas of pixels in the array. In one exemplary embodiment, the invention provides an ion-doped p-well region separating n-type photosensitive areas of neighboring pixel cells. The pixel cells have increased fill factor without encountering the disadvantages associated with conventional shallow trench isolation regions.

摘要翻译： 具有离子注入区域作为阵列中像素的相邻有效区域之间的隔离区域的像素单元阵列架构。 在一个示例性实施例中，本发明提供了分离相邻像素单元的n型感光区域的离子掺杂p阱区域。 像素单元具有增加的填充因子，而不会遇到与常规浅沟槽隔离区相关的缺点。

公开(公告)号：US20050179059A1

公开(公告)日：2005-08-18

申请号：US11105419

申请日：2005-04-14

申请人： Howard Rhodes ,  Inna Patrick ,  Richard Mauritzson

发明人： Howard Rhodes ,  Inna Patrick ,  Richard Mauritzson

IPC分类号： H01L21/00 ,  H01L27/10 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14601 ,  H01L27/14689

摘要： A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.

摘要翻译： 公开了位于第一导电类型的衬底中并且低于晶体管栅极的电活性部分的沟道长度的约一半的第一导电类型的阱区。 阱区域从第二导电类型的钉扎光电二极管的电荷收集区域横向移位。

公开(公告)号：US20120061786A1

公开(公告)日：2012-03-15

申请号：US12879452

申请日：2010-09-10

申请人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

发明人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L23/528

CPC分类号： H01L31/02327 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

摘要翻译： 用于例如背面照明成像器件的集成电路包括设置在衬底的第一侧上的电路，连接到电路并与衬底的第一侧间隔开的第一导电焊盘，与衬底间隔开的第二导电焊盘 衬底的第二侧，通过衬底形成的用于互连第一和第二导电焊盘的导电互连，以及围绕第二导电焊盘和至少一部分互连的电介质。 还描述了形成集成电路的方法。

公开(公告)号：US20070246788A1

公开(公告)日：2007-10-25

申请号：US11408194

申请日：2006-04-21

申请人： Richard Mauritzson ,  Inna Patrick

发明人： Richard Mauritzson ,  Inna Patrick

IPC分类号： H01L27/14 ,  H01L21/00

CPC分类号： H01L27/14654 ,  H01L27/1463 ,  H01L27/14689

摘要： The barrier region for isolating one or more dark regions of the pixel array of an image sensor from the active array or from the peripheral circuitry includes N-well pixel isolation region. The N-well pixel isolation region includes at least one N-well implant or at least one N-well stripe. The N-well pixel isolation region is adjacent the pixel cells which comprise the dark region. The addition of the N-well in the barrier region improves the isolation properties of the barrier region by reducing or eliminating the neutral P− EPI region in the barrier pixel area below the N-well isolation region.

摘要翻译： 用于将图像传感器的像素阵列的一个或多个暗区域与有源阵列或外围电路隔离的势垒区域包括N阱像素隔离区域。 N阱像素隔离区域包括至少一个N阱注入或至少一个N阱条纹。 N阱像素隔离区域与包括暗区域的像素单元相邻。 通过减少或消除N阱隔离区域之下的势垒像素区域中的中性P- EPI区域，在屏障区域中添加N-阱提高了屏障区域的隔离性能。

公开(公告)号：US20070102624A1

公开(公告)日：2007-05-10

申请号：US11643681

申请日：2006-12-22

申请人： Peter Altice ,  Jeffrey Bruce ,  Jeff McKee ,  Joey Shah ,  Richard Mauritzson

发明人： Peter Altice ,  Jeffrey Bruce ,  Jeff McKee ,  Joey Shah ,  Richard Mauritzson

IPC分类号： H01L27/00 ,  H01J40/14 ,  G01J1/44 ,  H03F3/08

CPC分类号： G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

摘要： An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

公开(公告)号：US20070063301A1

公开(公告)日：2007-03-22

申请号：US11600891

申请日：2006-11-17

申请人： Howard Rhodes ,  Richard Mauritzson ,  William Quinlin

发明人： Howard Rhodes ,  Richard Mauritzson ,  William Quinlin

IPC分类号： H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14654 ,  H01L27/14689

摘要： Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

摘要翻译： 本发明的实施例提供了一种图像传感器，其包括用于隔离装置的阻挡区域。 图像传感器包括衬底和形成在衬底上的像素单元的阵列。 每个像素单元包括光转换装置。 该阵列包括具有第一配置的第一像素单元，具有第二配置的第二像素单元，以及形成在第一和第二像素单元之间用于捕获和去除电荷的至少一个势垒区域。 阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。 电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。

公开(公告)号：US20070045668A1

公开(公告)日：2007-03-01

申请号：US11211490

申请日：2005-08-26

申请人： Frederick Brady ,  Richard Mauritzson

发明人： Frederick Brady ,  Richard Mauritzson

IPC分类号： H01L29/768

CPC分类号： H01L27/14683 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14656

摘要： The present invention provides a solid-state imager device having a patterned buried doped region in the substrate, preferably an n+ doped region, that collects excess electrons and thus reduces cross-talk, minimizes blooming of excess electrons, and reduces dark current in a solid-state imager device.

摘要翻译： 本发明提供了一种固态成像器件，其在衬底中具有图案化的掩埋掺杂区域，优选为n +掺杂区域，其收集过量电子，从而减少串扰，从而最小化多余电子的起伏，并减少固体中的暗电流 状态成像设备。

公开(公告)号：US20060065814A1

公开(公告)日：2006-03-30

申请号：US11265154

申请日：2005-11-03

申请人： Peter Altice ,  Jeffrey Bruce ,  Jeff Mckee ,  Joey Shah ,  Richard Mauritzson

发明人： Peter Altice ,  Jeffrey Bruce ,  Jeff Mckee ,  Joey Shah ,  Richard Mauritzson

IPC分类号： H01L27/00

CPC分类号： G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

摘要： An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

摘要翻译： 成像系统包括不需要行选择晶体管的像素。 相反，选择性地向像素读出电路提供工作电压，读出电路基于存储节点的充电或电压提供输出信号。 可以通过行驱动器将工作电压选择性地提供给像素阵列的每一行。 每个像素包括源极跟随器晶体管，其在列输出线上提供输出信号用于读出。 在通过传输晶体管将电荷转移到像素的存储节点之前，抗起霜晶体管可以连接到每个像素的光电传感器，以在电荷积分期间为电子提供溢出路径。 在图像采集之前，不由图像产生的电子被引入光传感器，在光电传感器中填充陷阱以减少图像劣化。

公开(公告)号：US20050167774A1

公开(公告)日：2005-08-04

申请号：US10768652

申请日：2004-02-02

申请人： Howard Rhodes ,  Richard Mauritzson ,  William Quinlin

发明人： Howard Rhodes ,  Richard Mauritzson ,  William Quinlin

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14645

摘要： Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

摘要翻译： 本发明的实施例提供了用于隔离图像传感器的装置的屏障区域。 阻挡区域包括在电连接到电压源端子的基板中的特定导电类型的电荷累积区域。 电荷累积区域与像素阵列的至少一个像素单元相邻。 电荷累积区域累积电荷并防止从阻挡区域一侧上的像素单元或外围电路到屏障区域另一侧上的像素单元的电荷转移。