公开(公告)号：US12014979B2

公开(公告)日：2024-06-18

申请号：US17991423

申请日：2022-11-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC: H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/76837 ,  H01L21/76871 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/49822 ,  H01L24/32 ,  H01L24/83 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02331 ,  H01L2224/32501 ,  H01L2924/0665 ,  H01L2924/15311

Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US20230051881A1

公开(公告)日：2023-02-16

申请号：US17401276

申请日：2021-08-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Yen Hsieh ,  Chih-Horng Chang ,  Chung-Yu Lu

IPC: H01L23/38 ,  H01L25/065 ,  H01L23/498 ,  H01L23/48 ,  H01L35/34

Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

公开(公告)号：US11508656B2

公开(公告)日：2022-11-22

申请号：US17359892

申请日：2021-06-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC: H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US09548245B2

公开(公告)日：2017-01-17

申请号：US14724954

申请日：2015-05-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/82 ,  H01L21/56 ,  H01L21/304 ,  H01L23/31

CPC classification number: H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract translation: 一种装置包括第一包装部件和第二包装部件，所述第一包装部件和第二包装部件下面并结合到第一包装部件。 成型材料设置在第一包装部件下方并被模制到第一和第二包装部件上，其中成型材料和第一包装部件形成界面。 隔离区域包括第一边缘，其中隔离区域的第一边缘接触第一封装部件的第一边缘和模制材料的第一边缘。 隔离层的底部低于界面。

公开(公告)号：US20140252600A1

公开(公告)日：2014-09-11

申请号：US13794698

申请日：2013-03-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Tin-Hao Kuo

IPC: H01L23/498 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/11823 ,  H01L2224/11824 ,  H01L2224/11831 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/00

Abstract: A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.

Abstract translation: 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。

公开(公告)号：US20240153843A1

公开(公告)日：2024-05-09

申请号：US18415587

申请日：2024-01-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Yen Hsieh ,  Chih-Horng Chang ,  Chung-Yu Lu

IPC: H01L23/38 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H10N10/01

CPC classification number: H01L23/38 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/0655 ,  H01L25/0657 ,  H10N10/01 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589

Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

公开(公告)号：US20230090895A1

公开(公告)日：2023-03-23

申请号：US17991423

申请日：2022-11-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC: H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US20200006220A1

公开(公告)日：2020-01-02

申请号：US16266446

申请日：2019-02-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC: H01L23/522 ,  H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L25/065

Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US09929070B2

公开(公告)日：2018-03-27

申请号：US15388572

申请日：2016-12-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L23/498 ,  H01L23/29 ,  H01L21/78

CPC classification number: H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

公开(公告)号：US20150262882A1

公开(公告)日：2015-09-17

申请号：US14724954

申请日：2015-05-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/304 ,  H01L21/56

CPC classification number: H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract translation: 一种装置包括第一包装部件和第二包装部件，所述第一包装部件和第二包装部件下面并结合到第一包装部件。 成型材料设置在第一包装部件下方并被模制到第一和第二包装部件上，其中成型材料和第一包装部件形成界面。 隔离区域包括第一边缘，其中隔离区域的第一边缘接触第一封装部件的第一边缘和模制材料的第一边缘。 隔离层的底部低于界面。