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公开(公告)号：US20180083186A1
公开(公告)日：2018-03-22
申请号：US15559195
申请日：2016-03-28
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
CPC classification number: H01L43/08 , G11B5/39 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , H01L45/147
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
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公开(公告)号：US20230025589A1
公开(公告)日：2023-01-26
申请号：US17858200
申请日：2022-07-06
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), RuαX1-α (1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5
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公开(公告)号：US20220238136A1
公开(公告)日：2022-07-28
申请号：US17714237
申请日：2022-04-06
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2FeαZβ is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α
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公开(公告)号：US20220010423A1
公开(公告)日：2022-01-13
申请号：US17348238
申请日：2021-06-15
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US20210328136A1
公开(公告)日：2021-10-21
申请号：US17333268
申请日：2021-05-28
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Tatsuo SHIBATA
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0≤x≤4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
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Patent Agency Ranking
公开(公告)号：US20200035913A1
公开(公告)日：2020-01-30
申请号：US16504388
申请日：2019-07-08
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.
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17.发明申请公开(公告)号：US20200027476A1
公开(公告)日：2020-01-23
申请号：US16565955
申请日：2019-09-10
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0
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公开(公告)号：US20190325903A1
公开(公告)日：2019-10-24
申请号：US16277045
申请日：2019-02-15
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Tatsuo SHIBATA
IPC: G11B5/39 , H01F10/32 , H01F10/193 , G11C11/16 , H01L27/105 , H01L27/22 , H01L43/10 , H01L43/08 , H01L29/82
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0
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公开(公告)号：US20190181334A1
公开(公告)日：2019-06-13
申请号：US16081357
申请日：2018-01-18
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes at least one of a nonmagnetic metal layer formed of Ag, a first nonmagnetic insertion layer provided on a lower surface of the nonmagnetic metal layer, and a second nonmagnetic insertion layer provided on an upper surface of the nonmagnetic metal layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy, and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the entire nonmagnetic spacer layer is formed of Ag.
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公开(公告)号：US20190173000A1
公开(公告)日：2019-06-06
申请号：US16209533
申请日：2018-12-04
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element according to one aspect of the present disclosure includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The spacer layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The spacer layer includes an Mn alloy represented by General Formula (1). MnγX1-γ (1) (in the Formula, X is at least one metal selected from the group consisting of Al, V, Cr, Cu, Zn, Ag, Au, an NiAl alloy, an AgMg alloy, and an AgZn alloy, and γ is 0
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