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公开(公告)号：US20210383853A1
公开(公告)日：2021-12-09
申请号：US17408707
申请日：2021-08-23
Applicant: TDK CORPORATION
Inventor： Tatsuo SHIBATA , Tomoyuki SASAKI
Abstract: A magnetic recording array includes domain wall motion elements and wirings, the domain wall motion elements includes first, second, and third elements, each having a magnetic wall motion layer with first and second end portions, the second element has the second end portion closest to the first end portion of the first element, the third element has the second end portion closest or second closest to the first end portion of the first element, a first distance between the first end portion of the first element and the second end portion of the second element and a second distance between the first end portion of the first element and the second end portion of the third element are shorter than a third distance between the first end portion of the first element and the first end portion closest to the first end portion of the first element.
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公开(公告)号：US20210028354A1
公开(公告)日：2021-01-28
申请号：US17000481
申请日：2020-08-24
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
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公开(公告)号：US20200273511A1
公开(公告)日：2020-08-27
申请号：US16795876
申请日：2020-02-20
Applicant: TDK CORPORATION
Inventor： Takuya ASHIDA , Tomoyuki SASAKI , Tatsuo SHIBATA
Abstract: A magnetic domain wall movement element includes a first ferromagnetic layer, a magnetic recording layer, a nonmagnetic layer, a first electrode, and a second electrode. The magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in a first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region. An area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode. The first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.
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公开(公告)号：US20200265875A1
公开(公告)日：2020-08-20
申请号：US16866655
申请日：2020-05-05
Applicant: TDK CORPORATION
Inventor： Takuya ASHIDA , Tatsuo SHIBATA
Abstract: A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.
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公开(公告)号：US20200105310A1
公开(公告)日：2020-04-02
申请号：US16292959
申请日：2019-03-05
Applicant: TDK CORPORATION
Inventor： Takuya ASHIDA , Tatsuo SHIBATA
Abstract: A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.
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Patent Agency Ranking
公开(公告)号：US20200083433A1
公开(公告)日：2020-03-12
申请号：US16565884
申请日：2019-09-10
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA
Abstract: A reservoir element of the first aspect of the present disclosure includes: a spin conduction layer containing a non-magnetic conductor; ferromagnetic layers positioned in a first direction with respect to the spin conduction layer and spaced apart from each other in a plan view from the first direction; and via wirings electrically connected to spin conduction layer on a surface opposite to a surface with the ferromagnetic layers.
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公开(公告)号：US20150123755A1
公开(公告)日：2015-05-07
申请号：US14532533
申请日：2014-11-04
Applicant: TDK CORPORATION
Inventor： Tatsuo SHIBATA , Masashi SAHASHI
IPC: H01F7/06
CPC classification number: G11C11/1677 , G11B5/012 , G11B5/02 , G11B5/65 , G11B5/66 , G11C11/15 , G11C11/161 , G11C11/1675 , H01F10/3218 , H01F10/3272 , H01F10/3286
Abstract: A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.
Abstract translation: 磁化控制元件包括铁磁材料层，交换耦合调节层，反铁磁材料层，电极层，向反铁磁材料层施加磁场的磁场施加机构，以及施加机构 电场到反铁磁材料层。 反铁磁材料层含有具有磁电效应的反铁磁材料或铁磁材料，铁磁材料层包括具有垂直于膜表面的磁化分量的垂直磁化膜，铁磁材料层包括磁性连接的铁磁材料层，通过 交换耦合到反铁磁材料层。 交换耦合调整层具有调节铁磁材料层和反铁磁材料层之间的交换耦合的功能。
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公开(公告)号：US20240268237A1
公开(公告)日：2024-08-08
申请号：US18294338
申请日：2021-08-03
Applicant: TDK CORPORATION
Inventor： Minoru OTA , Tatsuo SHIBATA
Abstract: A magnetic domain wall motion element includes a magnetic domain wall motion layer in which a magnetic domain wall is formed, a ferromagnetic layer, and a nonmagnetic layer interposed between the magnetic domain wall motion layer and the ferromagnetic layer, wherein at least a portion of a first surface of the magnetic domain wall motion layer on a side closer to the ferromagnetic layer, at a position overlapping with the ferromagnetic layer in a plan view in a laminating direction, is curved.
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公开(公告)号：US20230225222A1
公开(公告)日：2023-07-13
申请号：US18080498
申请日：2022-12-13
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Tatsuo SHIBATA
IPC: H01L29/82 , G11C11/16 , H01L27/105 , G01R33/09 , G11B5/39
CPC classification number: H10N50/85 , G11C11/1675 , H01L27/105 , H10N50/10 , G01R33/098 , H10B61/00 , G11C11/161 , H01L29/82 , G11B5/3909 , G01R33/093
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0
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公开(公告)号：US20220261559A1
公开(公告)日：2022-08-18
申请号：US17627027
申请日：2020-02-27
Applicant: TDK CORPORATION
Inventor： Tatsuo SHIBATA , Yukio TERASAKI
Abstract: An arithmetic circuit includes a variable resistance element having three terminals of a first terminal, a second terminal, and a third terminal and configured such that the resistance value is variable, an input line connected to the first terminal, a capacitor connected to the second terminal and provided between the second terminal and the reference potential, a first switching element connected to the third terminal, a wiring connected to the third terminal through the first switching element, a second switching element connected to a first end of the wiring, and a third switching element connected to a second end of the wiring.
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