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    Power switch with source-bias mode for on-chip powerdomain supply drooping
    11.
    发明授权
    Power switch with source-bias mode for on-chip powerdomain supply drooping 有权
    具有源偏置模式的电源开关，用于片上电源供应下垂

    公开(公告)号：US09417648B1

    公开(公告)日：2016-08-16

    申请号：US14733286

    申请日：2015-06-08

    Applicant: Texas Instruments Incorporated

    Inventor： Ramakrishnan Venkatasubramanian ,  Shane Stelmach ,  Soman Purushotaman ,  Michael Gill ,  Jose Luis Flores

    IPC: G05F1/10 ,  G05F3/02 ,  H03K17/687

    CPC classification number: G05F3/02 ,  H03K17/6871 ,  H03K17/6872

    Abstract: This invention is an electronic circuit with a low power retention mode. A single integrated circuit includes a circuit module and a droop switch circuit supplied by a voltage regulator. In a normal mode a PMOS source-drain channel connects the voltage regulator power to the circuit module power input or isolates them dependent upon a power switch input. In a low power mode a second PMOS connected between the first PMOS gate and output diode connects the first PMOS. This supplied the circuit module from the voltage regulator power as reduced in voltage by a diode forward bias drop. This lower voltage should be sufficient for flip-flops in the circuit module to retain their state while not guaranteeing logic operation. There may be a plurality of chain connected droop switch each powering a corresponding circuit module.

    Abstract translation: 本发明是具有低功率保持模式的电子电路。 单个集成电路包括由电压调节器提供的电路模块和下垂开关电路。 在正常模式下，PMOS源极 - 漏极通道将电压调节器功率连接到电路模块电源输入，或者根据电源开关输入将其隔离。 在低功率模式中，连接在第一PMOS栅极和输出二极管之间的第二PMOS连接第一PMOS。 这通过二极管正向偏压下降，从电压调节器电源提供电压降低的电压。 这个较低的电压应该足以使电路模块中的触发器保持其状态而不保证逻辑运行。 可以有多个链式连接的下垂开关，各自为对应的电路模块供电。

    Power Switch with Source-Bias Mode for on-chip Powerdomain Supply Drooping
    15.
    发明申请
    Power Switch with Source-Bias Mode for on-chip Powerdomain Supply Drooping 审中-公开
    具有源偏置模式的电源开关，用于片上电源供给下降

    公开(公告)号：US20160357211A1

    公开(公告)日：2016-12-08

    申请号：US15236743

    申请日：2016-08-15

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Ramakrishnan Venkatasubramanian ,  Shane Stelmach ,  Soman Purushotaman ,  Michael Gill ,  Jose Luis Flores

    IPC: G05F3/02 ,  H03K17/687

    CPC classification number: G05F3/02 ,  H03K17/6871 ,  H03K17/6872

    Abstract: This invention is an electronic circuit with a low power retention mode. A single integrated circuit includes a circuit module and a droop switch circuit supplied by a voltage regulator. In a normal mode a PMOS source-drain channel connects the voltage regulator power to the circuit module power input or isolates them dependent upon a power switch input. In a low power mode a second PMOS connected between the first PMOS gate and output diode connects the first PMOS. This supplied the circuit module from the voltage regulator power as reduced in voltage by a diode forward bias drop. This lower voltage should be sufficient for flip-flops in the circuit module to retain their state while not guaranteeing logic operation. There may be a plurality of chain connected droop switch each powering a corresponding circuit module.

    Abstract translation: 本发明是具有低功率保持模式的电子电路。 单个集成电路包括由电压调节器提供的电路模块和下垂开关电路。 在正常模式下，PMOS源极 - 漏极通道将电压调节器功率连接到电路模块电源输入，或者根据电源开关输入将其隔离。 在低功率模式中，连接在第一PMOS栅极和输出二极管之间的第二PMOS连接第一PMOS。 这通过二极管正向偏压下降，从电压调节器电源提供电压降低的电压。 这个较低的电压应该足以使电路模块中的触发器保持其状态而不保证逻辑运行。 可以有多个链式连接的下垂开关，各自为对应的电路模块供电。

    Adaptive voltage scaling using temperature and performance sensors
    16.
    发明授权
    Adaptive voltage scaling using temperature and performance sensors 有权

    公开(公告)号：US12301229B2

    公开(公告)日：2025-05-13

    申请号：US16369360

    申请日：2019-03-29

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Jose Luis Flores ,  Anthony Martin Hill ,  Francisco Adolfo Cano

    IPC: G06F1/324 ,  G01R31/317 ,  G06F1/20 ,  G06F1/3296 ,  H03K19/00

    Abstract: An adaptive voltage scaling technique includes using a temperature sensor arranged on a semiconductor die to determine a current die temperature of the semiconductor die, using a performance sensor arranged on a semiconductor die to determine a current performance metric of the semiconductor die, determining whether the current performance metric matches an expected performance metric based at least partially on the current die temperature and, if the current performance metric does not match the expected performance metric, indicate a performance sensor error, when a performance sensor error is indicated, determining an updated power supply voltage for correcting the performance sensor error, and causing a current power supply voltage supplied by a power supply voltage source of the semiconductor die to be changed to the updated power supply voltage.

    ADAPTIVE VOLTAGE SCALING USING TEMPERATURE AND PERFORMANCE SENSORS
    17.
    发明申请
    ADAPTIVE VOLTAGE SCALING USING TEMPERATURE AND PERFORMANCE SENSORS 审中-公开

    公开(公告)号：US20190229732A1

    公开(公告)日：2019-07-25

    申请号：US16369360

    申请日：2019-03-29

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Jose Luis Flores ,  Anthony Martin Hill ,  Francisco Adolfo Cano

    IPC: H03K19/00 ,  G06F1/20 ,  G01R31/317 ,  G06F1/3296 ,  G06F1/324

    Abstract: An adaptive voltage scaling technique includes using a temperature sensor arranged on a semiconductor die to determine a current die temperature of the semiconductor die, using a performance sensor arranged on a semiconductor die to determine a current performance metric of the semiconductor die, determining whether the current performance metric matches an expected performance metric based at least partially on the current die temperature and, if the current performance metric does not match the expected performance metric, indicate a performance sensor error, when a performance sensor error is indicated, determining an updated power supply voltage for correcting the performance sensor error, and causing a current power supply voltage supplied by a power supply voltage source of the semiconductor die to be changed to the updated power supply voltage.

    ON-CHIP POWER-DOMAIN SUPPLY DROOPING FOR LOW VOLTAGE IDLE/STANDBY MANAGEMENT
    18.
    发明申请
    ON-CHIP POWER-DOMAIN SUPPLY DROOPING FOR LOW VOLTAGE IDLE/STANDBY MANAGEMENT 有权
    片上电源供电低电压空闲/待机管理

    公开(公告)号：US20160357210A1

    公开(公告)日：2016-12-08

    申请号：US14733456

    申请日：2015-06-08

    Applicant: Texas Instruments Incorporated

    Inventor： Michael Gill ,  Ramakrishnan Venkatasubramanian ,  Shane Stelmach ,  Jose Luis Flores

    IPC: G05F3/02 ,  H03K17/687

    CPC classification number: G05F3/02 ,  H03K17/6872 ,  H03K19/0016

    Abstract: A power supply for an electronic circuit enables a low effort retention mode. During a normal mode a circuit module is supplied a first voltage sufficient for a controlled circuit to operate. During the low effort retention mode the circuit module is supplied with a second voltage lower than the first voltage. The second voltage is sufficient for flop-flops to retain their state but not sufficient to guarantee proper circuit operation. The second voltage is produced by a voltage drop (droop) from the first voltage. The preferred embodiment includes a System On Chip and one external voltage regulator and an on-chip droop circuit for each circuit module.

    Abstract translation: 电子电路的电源能够实现低功率保持模式。 在正常模式期间，向电路模块提供足以使受控电路工作的第一电压。 在低功耗保持模式期间，电路模块被提供有低于第一电压的第二电压。 第二个电压足以使电动机保持其状态，但不足以保证电路正常工作。 第二电压由第一电压的电压降（下降）产生。 优选实施例包括用于每个电路模块的片上系统和一个外部电压调节器和片上下降电路。

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