公开(公告)号：US20210104504A1

公开(公告)日：2021-04-08

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  Charles Forman ,  John T. Leonard ,  SeungGeun Lee ,  Dan Cohen ,  Robert M. Farrell ,  Michael Iza ,  Burhan Saifaddin ,  Abdullah Almogbel ,  Humberto Foronda ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L25/16 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

公开(公告)号：US20190207043A1

公开(公告)日：2019-07-04

申请号：US16325246

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Asad J. Mughal ,  David Hwang ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L31/0304 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32

CPC classification number: H01L31/03044 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/32 ,  Y02E10/544

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

公开(公告)号：US20190074404A1

公开(公告)日：2019-03-07

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L31/147

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.