公开(公告)号：US20130200491A1

公开(公告)日：2013-08-08

申请号：US13760210

申请日：2013-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Koji AKIYAMA ,  Shingo HISHIYA ,  Katsushige HARADA

IPC: H01L49/02

CPC classification number: H01L28/60 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02356 ,  H01L28/75 ,  H01L28/92

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract translation: 提供一种制造能够实现高介电常数性能和低漏电流的电容器的方法，电容器以及形成在电容器中使用的电介质膜的方法。 通过在基板上形成下电极层来制造电容器; 在下电极层上形成具有界面控制功能的第一TiO 2膜; 在第一TiO 2膜上形成ZrO 2基膜; 在形成ZrO 2基膜之后进行用于使ZrO 2基膜中的ZrO 2结晶的退火处理; 形成用作ZrO2基膜上的电容膜的第二TiO 2膜; 以及在所述第二TiO 2膜上形成上电极层。

公开(公告)号：US20180334385A1

公开(公告)日：2018-11-22

申请号：US15978232

申请日：2018-05-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA

IPC: C01B13/02 ,  C01B13/11

CPC classification number: C01B13/0296 ,  C01B13/00 ,  C01B13/11 ,  C01B2201/90

Abstract: A method includes: storing a first flow rate from an oxygen mass flow controller for supplying an oxygen with an ozone generator turned off and measuring a flow rate of the oxygen supplied to the ozone generator, and a second flow rate from at least one ozone mass flow controller provided in flow paths; supplying the ozone into a processing container via the flow paths to perform multiple times a predetermined ozone-based process; acquiring a third flow rate from the oxygen mass flow controller and a fourth flow rate from the at least one ozone mass flow controller, by supplying the oxygen with the ozone generator turned off during a predetermined period between the ozone-based processes; and determining whether the fourth flow rate is a normal value by comparing the first and second flow rates with the third and fourth flow rates, respectively.

公开(公告)号：US20140126980A1

公开(公告)日：2014-05-08

申请号：US14071205

申请日：2013-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Akira SHIMIZU

IPC: B65G49/00

CPC classification number: H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67712

Abstract: Provided is a substrate processing apparatus which includes: first and second vacuum transfer chambers which are partitioned from each other; processing chambers configured to perform a vacuum processing onto substrates; a load lock chamber installed to be sandwiched between the first and second vacuum transfer chambers, and including partition valves installed between the load lock chamber and a normal pressure atmosphere, and between the load lock chamber and each of the first and second vacuum transfer chambers; and substrate mounting tables inside the load lock chamber and configured to move between an upper position at which the substrates are transferred between the load lock chamber and the normal pressure atmosphere, and a lower position at which the substrates are transferred between the load lock chamber and the first or second vacuum transfer chamber.

Abstract translation: 提供了一种基板处理装置，其包括：彼此分隔的第一和第二真空传送室; 处理室，被配置为对基板执行真空处理; 安装在第一和第二真空传送室之间的负载锁定室，并且包括安装在负载锁定室和常压气氛之间以及负载锁定室与第一和第二真空传送室中的每一个之间的分隔阀; 以及衬底安装台，其设置在所述负载锁定室内并且构造成在所述衬底在所述负载锁定室和所述常压气氛之间传递的上部位置和所述衬底在所述负载锁定室和所述正常压力气氛之间传送的下部位置之间移动; 第一或第二真空传送室。

公开(公告)号：US20130205611A1

公开(公告)日：2013-08-15

申请号：US13766285

申请日：2013-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Hiromi SHIMA

IPC: F26B19/00

CPC classification number: F26B19/00 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/45525 ,  C23C16/45563 ,  C23C16/45587 ,  Y10T137/2931

Abstract: Provided is a gas supply apparatus having a source gas supply system configured to supply a source gas to a processing container using a carrier gas, wherein the source gas is generated from a liquid raw material consisting of an organic metal material. The gas supply apparatus includes a raw material storage tank configured to store the liquid raw material therein; a gas supply portion installed to the raw material storage tank and connected to a carrier gas passage, wherein the carrier gas passage allows the carrier gas to flow; a gas outflow portion installed to the raw material storage tank and connected to a source gas passage, wherein the source gas passage allows the source gas to flow; and a baffle plate configured to prevent the carrier gas injected from the gas supply portion from being brought into direct contact with a liquid surface of the raw material.

Abstract translation: 提供一种气体供给装置，其具有源气体供给系统，该源气体供给系统构造成使用载气将源气体供给到处理容器，其中源气体由由有机金属材料构成的液体原料产生。 气体供给装置包括：原料容纳槽，其配置为在其中储存液体原料; 气体供给部，其安装在原料储罐上并与载气通道连接，其中载气通道允许载气流动; 气体流出部分安装在原料储罐上并连接到源气体通道，其中源气体通道允许源气体流动; 以及挡板，其构造成防止从气体供给部喷射的载气与原料的液面直接接触。