公开(公告)号：US20190080833A1

公开(公告)日：2019-03-14

申请号：US15919576

申请日：2018-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Young Min EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Tadaaki OIKAWA ,  Kenichi YOSHINO

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01F41/30

CPC classification number: H01F10/3254 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one emcodiment, a magnetic device comprising a magnetoresistive effect element, wherein the magnetoresistive effect element; includes: a first ferromagnetic body, a second ferromagnetic body, and a first rare-earth ferromagnetic oxide that is provided between the first ferromagnetic body and the second ferromagnetic body and magnetically joins the first ferromagnetic body and the second ferromagnetic body.

公开(公告)号：US20190080739A1

公开(公告)日：2019-03-14

申请号：US15917081

申请日：2018-03-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tadaaki OIKAWA ,  Young Min EEH ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Toshihiko NAGASE ,  Daisuke WATANABE

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive element includes: a first magnetic layer having a magnetization direction that is variable; a second magnetic layer having a magnetization direction that is invariable; a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a third magnetic layer that fixes the magnetization direction of the second magnetic layer and that antiferromagnetically couples with the second magnetic layer; and a second non-magnetic layer provided between the second magnetic layer and the third magnetic layer. The second non-magnetic layer includes ruthenium (Ru) and a metal element.

公开(公告)号：US20190019841A1

公开(公告)日：2019-01-17

申请号：US16125759

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.