公开(公告)号：US20190288184A1

公开(公告)日：2019-09-19

申请号：US16129265

申请日：2018-09-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Youngmin EEH ,  Kazuya SAWADA ,  Masaru TOKO

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L27/22

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from −1 kOe to +1 kOe.

公开(公告)号：US20180269043A1

公开(公告)日：2018-09-20

申请号：US15704820

申请日：2017-09-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koji UEDA ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA

IPC: H01J37/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3435 ,  C23C14/35 ,  C23C14/352 ,  C23C14/505 ,  C23C14/542 ,  H01J37/3405 ,  H01J37/3452 ,  H01L21/02175 ,  H01L21/02266 ,  H01L43/12

Abstract: According to one embodiment, a film formation method using a magnetron sputtering apparatus including first and second magnets provided on first and second target holders, includes forming an insulating film on a wafer placed on a main surface of a wafer stage by sputtering first and second insulating targets set on the first and second target holders, wherein the wafer includes an effective area to be used for a product and an ineffective area outside the effective area, and when viewed from a direction perpendicular to the main surface of the wafer stage, at least a part of the first magnet overlaps the effective area of the wafer placed on the main surface of the wafer stage, and the entire second magnet does not overlap the effective area of the wafer placed on the main surface of the wafer stage.

公开(公告)号：US20190019841A1

公开(公告)日：2019-01-17

申请号：US16125759

申请日：2018-09-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.

公开(公告)号：US20190109280A1

公开(公告)日：2019-04-11

申请号：US16203114

申请日：2018-11-28

Applicant: SK hynix Inc. ,  TOSHIBA MEMORY CORPORATION

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

公开(公告)号：US20180277745A1

公开(公告)日：2018-09-27

申请号：US15702677

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Tadaaki OIKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI ,  Yang Kon KIM ,  Ku Youl JUNG ,  Jong Koo LIM ,  Jae Hyoung LEE ,  Soo Man SEO ,  Sung Woong CHUNG ,  Tae Young LEE

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

公开(公告)号：US20180076383A1

公开(公告)日：2018-03-15

申请号：US15463331

申请日：2017-03-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.

公开(公告)号：US20180076262A1

公开(公告)日：2018-03-15

申请号：US15445829

申请日：2017-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a semiconductor device includes a first rare earth oxide layer, a first magnetic layer being adjacent to the first rare earth oxide layer, and a nonmagnetic layer, the first magnetic layer being disposed between the first rare earth oxide layer and the nonmagnetic layer and being oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer.

公开(公告)号：US20190334081A1

公开(公告)日：2019-10-31

申请号：US16503685

申请日：2019-07-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.

公开(公告)号：US20180284199A1

公开(公告)日：2018-10-04

申请号：US15841535

申请日：2017-12-14

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Ku-Youl JUNG ,  Guk-Cheon KIM ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Won-Joon CHOI ,  Youngmin EEH ,  Kazuya SAWADA

IPC: G01R33/09 ,  H01L27/11 ,  H01L27/108 ,  H01L27/112

CPC classification number: G01R33/093 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01L27/108 ,  H01L27/1104 ,  H01L27/112 ,  H01L27/22

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer between the free layer and the pinned layer, wherein the free layer may include a first magnetic layer; a second magnetic layer having a smaller perpendicular magnetic anisotropy energy density than the first magnetic layer; and a spacer interposed between the first magnetic layer and the second magnetic layer.

公开(公告)号：US20180205006A1

公开(公告)日：2018-07-19

申请号：US15917936

申请日：2018-03-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction; a second magnetic layer, a magnetization direction of the second magnetic layer being invariable; a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer having a stacked layer structure in which amorphous magnetic material layer is sandwiched between crystalline magnetic material layers.