公开(公告)号：US20200294567A1

公开(公告)日：2020-09-17

申请号：US16568123

申请日：2019-09-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tadaaki OIKAWA ,  Young Min EEH ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Eiji KITAGAWA ,  Taiga ISODA

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.

公开(公告)号：US20180277745A1

公开(公告)日：2018-09-27

申请号：US15702677

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Tadaaki OIKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI ,  Yang Kon KIM ,  Ku Youl JUNG ,  Jong Koo LIM ,  Jae Hyoung LEE ,  Soo Man SEO ,  Sung Woong CHUNG ,  Tae Young LEE

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

公开(公告)号：US20180076383A1

公开(公告)日：2018-03-15

申请号：US15463331

申请日：2017-03-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.

公开(公告)号：US20180076262A1

公开(公告)日：2018-03-15

申请号：US15445829

申请日：2017-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a semiconductor device includes a first rare earth oxide layer, a first magnetic layer being adjacent to the first rare earth oxide layer, and a nonmagnetic layer, the first magnetic layer being disposed between the first rare earth oxide layer and the nonmagnetic layer and being oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer.

公开(公告)号：US20190334081A1

公开(公告)日：2019-10-31

申请号：US16503685

申请日：2019-07-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.

公开(公告)号：US20200091410A1

公开(公告)日：2020-03-19

申请号：US16352279

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Eiji KITAGAWA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Taiga ISODA

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

公开(公告)号：US20200302987A1

公开(公告)日：2020-09-24

申请号：US16566472

申请日：2019-09-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Eiji KITAGAWA ,  Taiga ISODA

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

公开(公告)号：US20200082857A1

公开(公告)日：2020-03-12

申请号：US16352137

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Young Min EEH ,  Taeyoung LEE ,  Kazuya SAWADA ,  Eiji KITAGAWA ,  Taiga ISODA ,  Tadaaki OIKAWA ,  Kenichi YOSHINO

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01F41/32 ,  H01F10/32

Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.

公开(公告)号：US20180205006A1

公开(公告)日：2018-07-19

申请号：US15917936

申请日：2018-03-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction; a second magnetic layer, a magnetization direction of the second magnetic layer being invariable; a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer having a stacked layer structure in which amorphous magnetic material layer is sandwiched between crystalline magnetic material layers.

公开(公告)号：US20190296226A1

公开(公告)日：2019-09-26

申请号：US16123846

申请日：2018-09-06

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Young Min EEH ,  Daisuke WATANABE ,  Jae-Hyoung LEE ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Taiga ISODA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.