公开(公告)号：US20180277182A1

公开(公告)日：2018-09-27

申请号：US15702298

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tsuneo INABA

IPC: G11C11/15

CPC classification number: G11C11/15 ,  G11C7/18 ,  G11C8/08 ,  G11C8/14 ,  G11C11/1653 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673 ,  G11C11/1693 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2207/002

Abstract: According to one embodiment, a semiconductor memory device includes a first memory cell including a first resistance change memory element and a first transistor, a first word line electrically coupled to a control terminal of the first transistor, and a first circuit configured to, in a reading, apply a first voltage to the first word line during a first period and apply a second voltage higher than the first voltage to the first word line during a second period after the first period.

公开(公告)号：US20180075890A1

公开(公告)日：2018-03-15

申请号：US15459797

申请日：2017-03-15

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tsuneo INABA

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C7/04 ,  G11C7/1096 ,  G11C11/1655 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/1697

Abstract: According to an embodiment, a magnetic storage device includes a memory cell including a magnetoresistive effect element including a storage layer and a reference layer; first and second line electrically coupled to the magnetoresistive effect element; and a write driver. The write driver supplies a first voltage to the first line in a first write operation in which a first resistance value of the magnetoresistive effect element is changed to a second resistance value smaller than the first resistance value, and supplies a second voltage different from the first voltage to the second line in a second write operation in which the second resistance value of the magnetoresistive effect element is changed to the first resistance value.