Patterning process
    17.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号:US08722321B2

    公开(公告)日:2014-05-13

    申请号:US13450867

    申请日:2012-04-19

    IPC分类号: G03F7/26

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译: 通过将抗蚀剂组合物涂布在基材上,烘烤,暴露于高能量辐射,烘烤(PEB)和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域,形成负图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度,并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Positive resist composition and patterning process
    19.
    发明授权
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号:US08795942B2

    公开(公告)日:2014-08-05

    申请号:US12000284

    申请日:2007-12-11

    CPC分类号: G03F7/0397 G03F7/0045

    摘要: There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

    摘要翻译: 公开了一种抗蚀剂组合物,其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率,并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含(A)包含由以下通式(1)表示的重复单元的树脂组分; (B)在暴露于高能量束时产生由以下通式(2)表示的磺酸的光酸产生剂; 和(C)鎓盐,其中阳离子是由以下通式(3)表示的锍或由以下通式(4)表示的铵; 并且阴离子由以下通式(5)至(7)中的任一个表示。