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公开(公告)号：US20050001239A1
公开(公告)日：2005-01-06
申请号：US10497490
申请日：2002-12-03
IPC分类号： H01L31/10 , H01L31/101 , H01L31/105 , H01L27/10
CPC分类号： H01L31/105 , H01L31/101
摘要： A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time τtot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.
摘要翻译： 光电二极管具有由具有层宽度WD的贫化的第一半导体光吸收层和具有层宽度WA的p型中性第二半导体光吸收层构成的光吸收层。 WA和WD之间的比率被设定为使得在光吸收层中总载流子传播时间tautot变得最小。 光电二极管还可以包括在第一半导体光吸收层和n型半导体电极层之间具有比第一半导体光吸收层的带隙大的带隙的耗尽的半导体光透射层。
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公开(公告)号：US06909161B2
公开(公告)日：2005-06-21
申请号：US10497490
申请日：2002-12-03
IPC分类号： H01L31/10 , H01L31/101 , H01L31/105 , H01L31/075
CPC分类号： H01L31/105 , H01L31/101
摘要： A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time τtot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.
摘要翻译： 光电二极管具有由具有层宽度W D的耗尽的第一半导体光吸收层和具有层宽度W A的P型中性第二半导体光吸收层构成的光吸收层， / SUB>。 设置W SUB和W D之间的比率使得在光吸收层中总载流子传输时间τT tt变得最小。 光电二极管还可以包括在第一半导体光吸收层和n型半导体电极层之间具有比第一半导体光吸收层的带隙大的带隙的耗尽的半导体光透射层。
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13.发明授权Apparatus and method for controlling the muting of sound and the display of audio information on a television receiver 失效用于控制声音的静音和在电视接收机上显示音频信息的装置和方法
公开(公告)号：US5477277A
公开(公告)日：1995-12-19
申请号：US185408
申请日：1994-01-24
CPC分类号： H04N21/4884 , H04N5/44513 , H04N5/60 , H04N5/505
摘要： Apparatus and method which commands the displaying of audio information on a television receiver display in the case where it is judged that a sound muting control unit was operated, whereby the audio information is displayed by a single operation of the sound muting control unit.
摘要翻译： 在判断出声音静音控制单元被操作的情况下命令在电视接收机显示器上显示音频信息的装置和方法，由此通过声音静噪控制单元的单个操作来显示音频信息。
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公开(公告)号：US08704322B2
公开(公告)日：2014-04-22
申请号：US13356104
申请日：2012-01-23
IPC分类号： H01L31/0232
CPC分类号： H01L27/1446 , H01L31/0203 , H01L31/022408 , H01L31/02327 , H01L31/105 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
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公开(公告)号：US20120193740A1
公开(公告)日：2012-08-02
申请号：US13356104
申请日：2012-01-23
IPC分类号： H01L31/0232
CPC分类号： H01L27/1446 , H01L31/0203 , H01L31/022408 , H01L31/02327 , H01L31/105 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
摘要翻译： 本发明旨在提供一种紧凑且简单的光学半导体器件，其减少光接收元件之间的串扰（漏电流）。 根据本发明，由于背面电极是镜面状的薄膜，因此能够抑制与相邻的受光元件的串扰，能够降低光强度的检测误差。 通过设置图案化的背面电极或通过在整个背面的绝缘膜的底部设置欧姆电极，可以降低背面的接触电阻。 通过使用具有二维排列的光半导体元件和通过使用镜面状的薄膜作为背面电极，可以降低串扰。 通过将光学半导体元件容纳在高度密封状态的壳体中，可以保护光学半导体元件免受外部环境的影响。
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公开(公告)号：US5949120A
公开(公告)日：1999-09-07
申请号：US805497
申请日：1997-02-26
IPC分类号： G02B6/12 , G02B6/42 , H01L31/103 , H01L31/06 , H01L31/0232
CPC分类号： H01L31/1035 , G02B6/12004 , G02B6/42 , G02B2006/12123 , G02B2006/12126
摘要： This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.
摘要翻译： 该半导体光电检测器包括光吸收层，n型第一半导体层和p型第二半导体层。 光吸收层包括与第一层接触形成的n型第一层和p型第二层。 第一半导体层布置在第一层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 第二半导体层布置在第二层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 当在第一和第二半导体层之间施加预定的反向偏置电压时，第一层完全耗尽，第二层被部分耗尽。
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17.发明授权Television receiver and decoder for closed-caption broadcast providing simple character display showing existence of a closed-caption signal irrespective of user selection of closed caption demodulation 失效用于闭路字幕广播的电视接收机和解码器，提供简单的字符显示，显示闭路字幕信号的存在，而与用户选择的隐藏字幕解调无关
公开(公告)号：US5315386A
公开(公告)日：1994-05-24
申请号：US025245
申请日：1993-03-02
申请人： Yoshifumi Muramoto
发明人： Yoshifumi Muramoto
CPC分类号： H04N21/4884 , H04N5/44513 , H04N7/0885
摘要： A television receiver includes a closed-caption signal demodulator, an existence-of-closed-caption-signal discriminator located upstream of the demodulator, and a character memory for supplying a simple character, meaning that a closed-caption signal exists in an image signal, onto the screen of the television receiver. This simple character is supplied to the screen upon receipt of a discrimination signal, indicating that a closed-caption signal, exists in an image signal from the existence-of-closed-caption-signal discriminator. With this television receiver, the user can recognize, at a time prior to actual selection of closed-caption signal demodulation, whether or not a closed-caption signal exists, in an image signal.
摘要翻译： 电视接收机包括闭路字幕信号解调器，位于解调器上游的闭合字幕信号鉴别器，以及用于提供简单字符的字符存储器，这意味着在图像信号中存在闭路字幕信号 ，到电视接收机的屏幕上。 当接收到来自闭路字幕信号鉴别器的图像信号的识别信号，表示闭路字幕信号时，将这个简单的字符提供给屏幕。 利用该电视接收机，在图像信号中，用户可以在实际选择闭路字幕信号解调之前识别是否存在闭路字幕信号。
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