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1.发明授权Apparatus and method for controlling the muting of sound and the display of audio information on a television receiver 失效用于控制声音的静音和在电视接收机上显示音频信息的装置和方法
公开(公告)号：US5477277A
公开(公告)日：1995-12-19
申请号：US185408
申请日：1994-01-24
CPC分类号： H04N21/4884 , H04N5/44513 , H04N5/60 , H04N5/505
摘要： Apparatus and method which commands the displaying of audio information on a television receiver display in the case where it is judged that a sound muting control unit was operated, whereby the audio information is displayed by a single operation of the sound muting control unit.
摘要翻译： 在判断出声音静音控制单元被操作的情况下命令在电视接收机显示器上显示音频信息的装置和方法，由此通过声音静噪控制单元的单个操作来显示音频信息。
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2.发明授权Avalanche photodiode having doping region with monotonically increasing concentration distribution 有权具有掺杂区域的雪崩光电二极管具有单调增加的浓度分布公开(公告)号：US07880197B2
公开(公告)日：2011-02-01
申请号：US11993801
申请日：2006-06-27
IPC分类号： H01L31/06
CPC分类号： H01L31/107 , H01L31/1075
摘要： In an electron-injection type APD, it is necessary to prevent a dark current increase and to secure the life time of the device. It is demanded to improve reliability of the APD with a lower production cost. With the InP buffer layer having an n-type doping region on the inside of a region defined by an optical absorption layer, a predetermined doping profile is achieved by ion implantation. Thus, electric field concentration in the avalanche multiplication layer is relaxed. Furthermore, a low-concentration second optical absorption layer is provided between the optical absorption layer and the avalanche multiplication layer. Responsivity of the optical absorption layer is maximized, and depletion of the lateral surface of the optical absorption layer is prevented; thus, electric field concentration is prevented. Preventing edge breakdown, the device improves its reliability.
摘要翻译： 在电子注入型APD中，需要防止暗电流增加并确保器件的使用寿命。 要求以较低的生产成本提高APD的可靠性。 通过InP缓冲层在由光吸收层限定的区域的内侧具有n型掺杂区域，通过离子注入实现预定的掺杂分布。 因此，雪崩倍增层中的电场浓度被放宽。 此外，在光吸收层和雪崩倍增层之间设置低浓度第二光吸收层。 光吸收层的响应性最大化，并且防止光吸收层的侧表面的消耗; 从而防止电场集中。 防止边缘故障，设备提高其可靠性。
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公开(公告)号：US20130168793A1
公开(公告)日：2013-07-04
申请号：US13819559
申请日：2011-09-01
IPC分类号： H01L31/02
CPC分类号： H01L31/02002 , H01L31/022416 , H01L31/03046 , H01L31/035281 , H01L31/1075 , Y02E10/544
摘要： An APD is provided with the semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side, and a depletion control region that is provided in layers on the second mesa side relative to the p-type electric field control layer, formed in an encircling portion provided inside an outer circumference of the first mesa and encircling an outer circumference of the second mesa, and prevents the encircling portion of the p-type electric field control layer from being depleted when bias is applied.
摘要翻译： APD设置有半绝缘基板，第一台面具有第一层叠结构，其中p型电极层，p型光吸收层，具有低杂质浓度的光吸收层，带隙倾斜 层叠，p型电场控制层，雪崩乘法器层，n型电场控制层和具有低杂质浓度的电子传输层依次层叠在半绝缘基板的表面上， 第二台面，其具有从层叠方向观察时设置在第一台面的外周的外周，并且具有第二层叠结构，其中n型电极缓冲层和n型电极层依次层叠在 电子转移层侧的表面和相对于p型电场控制层设置在第二台面侧的层的耗尽控制区域，形成在环状端口 n设置在第一台面的外周内并且围绕第二台面的外周，并且在施加偏压时防止p型电场控制层的环绕部分耗尽。
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公开(公告)号：US08754445B2
公开(公告)日：2014-06-17
申请号：US13981050
申请日：2012-01-20
IPC分类号： H01L31/107
CPC分类号： H01L29/0615 , G02F1/025 , G02F2001/0157 , H01L29/0692 , H01L29/0821 , H01L29/205 , H01L29/41708 , H01L29/42304 , H01L29/7371 , H01L31/03046 , H01L31/035281 , H01L31/105 , Y02E10/544
摘要： A layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced. This effect can be commonly obtained for a heterostructure bipolar transistor, a photodiode, an electroabsorption modulator, and so on. In the photodiode, since the leakage current is alleviated, the device size can be reduced, so that in addition to improvement of operating speed with a reduction in series resistance, it is advantageous that the device can be densely disposed in an array.
摘要翻译： 产生通常不需要用于器件操作的电位电平差的层被积极地插入到器件结构中。 电位差具有这样的功能：即使具有小的带隙的半导体暴露在台面侧表面上，也能够抑制该部分的电位下降量，并且能够减少不利于器件操作的漏电流。 对于异质结双极晶体管，光电二极管，电吸收调制器等，通常可以获得这种效果。 在光电二极管中，由于泄漏电流被减轻，所以能够减小器件尺寸，除了随着串联电阻的降低而提高工作速度之外，还可以将器件密集地排列成阵列。
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公开(公告)号：US08704322B2
公开(公告)日：2014-04-22
申请号：US13356104
申请日：2012-01-23
IPC分类号： H01L31/0232
CPC分类号： H01L27/1446 , H01L31/0203 , H01L31/022408 , H01L31/02327 , H01L31/105 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
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公开(公告)号：US08575650B2
公开(公告)日：2013-11-05
申请号：US13133990
申请日：2009-12-11
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.
摘要翻译： 具有嵌入式n电极结构的电子注入APD，其中可以抑制边缘击穿而不以高精度控制嵌入式n电极结构的n型区域的掺杂分布。 包括具有低电离速率的缓冲层的APD插入在n电极连接层和雪崩倍增层之间。 具体地，APD是电子注入APD，其中n电极层，n电极连接层，缓冲层，雪崩倍增层，电场控制层，带隙梯度层，低浓度光吸收层 p型光吸收层和ap电极层依次层叠，并且至少包含低浓度光吸收层和p型光吸收层的光吸收部形成台面形状。
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公开(公告)号：US20050001239A1
公开(公告)日：2005-01-06
申请号：US10497490
申请日：2002-12-03
IPC分类号： H01L31/10 , H01L31/101 , H01L31/105 , H01L27/10
CPC分类号： H01L31/105 , H01L31/101
摘要： A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time τtot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.
摘要翻译： 光电二极管具有由具有层宽度WD的贫化的第一半导体光吸收层和具有层宽度WA的p型中性第二半导体光吸收层构成的光吸收层。 WA和WD之间的比率被设定为使得在光吸收层中总载流子传播时间tautot变得最小。 光电二极管还可以包括在第一半导体光吸收层和n型半导体电极层之间具有比第一半导体光吸收层的带隙大的带隙的耗尽的半导体光透射层。
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公开(公告)号：US08729602B2
公开(公告)日：2014-05-20
申请号：US13819279
申请日：2011-09-01
IPC分类号： H01L31/107 , H01L21/00
CPC分类号： H01L31/035281 , H01L31/03046 , H01L31/1075 , Y02E10/544
摘要： An APD is provided with a semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, and in the APD, a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2×1011 to 1×1012/cm2.
摘要翻译： APD设置有半绝缘基板，第一台面具有第一层叠结构，其中p型电极层，p型光吸收层，具有低杂质浓度的光吸收层，带隙倾斜 层叠，p型电场控制层，雪崩乘法器层，n型电场控制层和具有低杂质浓度的电子传输层依次层叠在半绝缘基板的表面上， 第二台面，其具有从层叠方向观察时设置在第一台面的外周的外周，并且具有第二层叠结构，其中n型电极缓冲层和n型电极层依次层叠在 在第一台面的电子转移层侧的表面，在APD中，n型电场控制层的供体总供体浓度低于p型电解质的总受体浓度 在2×1011到1×1012 / cm2的范围内的场域控制层。
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公开(公告)号：US20120193740A1
公开(公告)日：2012-08-02
申请号：US13356104
申请日：2012-01-23
IPC分类号： H01L31/0232
CPC分类号： H01L27/1446 , H01L31/0203 , H01L31/022408 , H01L31/02327 , H01L31/105 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
摘要翻译： 本发明旨在提供一种紧凑且简单的光学半导体器件，其减少光接收元件之间的串扰（漏电流）。 根据本发明，由于背面电极是镜面状的薄膜，因此能够抑制与相邻的受光元件的串扰，能够降低光强度的检测误差。 通过设置图案化的背面电极或通过在整个背面的绝缘膜的底部设置欧姆电极，可以降低背面的接触电阻。 通过使用具有二维排列的光半导体元件和通过使用镜面状的薄膜作为背面电极，可以降低串扰。 通过将光学半导体元件容纳在高度密封状态的壳体中，可以保护光学半导体元件免受外部环境的影响。
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公开(公告)号：US20110241150A1
公开(公告)日：2011-10-06
申请号：US13133990
申请日：2009-12-11
IPC分类号： H01L31/0224
CPC分类号： H01L31/1075
摘要： An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.
摘要翻译： 具有嵌入式n电极结构的电子注入APD，其中可以抑制边缘击穿而不以高精度控制嵌入式n电极结构的n型区域的掺杂分布。 包括具有低电离速率的缓冲层的APD插入在n电极连接层和雪崩倍增层之间。 具体地，APD是电子注入APD，其中n电极层，n电极连接层，缓冲层，雪崩倍增层，电场控制层，带隙梯度层，低浓度光吸收层 p型光吸收层和ap电极层依次层叠，并且至少包含低浓度光吸收层和p型光吸收层的光吸收部形成台面形状。
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