公开(公告)号：US09129823B2

公开(公告)日：2015-09-08

申请号：US13854507

申请日：2013-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Bao-Ru Young ,  Wei Cheng Wu ,  Kong-Pin Chang ,  Chia Ming Liang ,  Meng-Fang Hsu ,  Ching-Feng Fu ,  Shih-Ting Hung

IPC: H01L21/76 ,  H01L29/06 ,  H01L21/762 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/66651 ,  H01L29/7833 ,  H01L29/7851

Abstract: The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.

Abstract translation: 所描述的实施例提供了用于蚀刻半导体主体上的有源区域并且外延沉积覆盖有源区域的半导体层的方法和半导体器件区域。 这些方法可以减轻或消除随后与STI科技相关的制造过程中遇到的问题。

公开(公告)号：US12119231B2

公开(公告)日：2024-10-15

申请号：US17874694

申请日：2022-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/30608 ,  H01L21/76829 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/7851

Abstract: In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.

公开(公告)号：US20240290887A1

公开(公告)日：2024-08-29

申请号：US18656134

申请日：2024-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu

IPC: H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823443 ,  H01L21/823821 ,  H01L29/41791 ,  H01L29/4975 ,  H01L29/66795

Abstract: In an embodiment, a structure includes: a gate stack over a channel region of a substrate; a source/drain region adjacent the channel region; a first inter-layer dielectric (ILD) layer over the source/drain region; a silicide between the first ILD layer and the source/drain region, the silicide contacting a top surface of the source/drain region and a bottom surface of the source/drain region; and a first source/drain contact having a first portion and a second portion, the first portion of the first source/drain contact disposed between the silicide and the first ILD layer, the second portion of the first source/drain contact extending through the first ILD layer and contacting the silicide.

公开(公告)号：US20240006534A1

公开(公告)日：2024-01-04

申请号：US18344176

申请日：2023-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/0649 ,  H01L21/7682 ,  H01L21/823431 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US11715777B2

公开(公告)日：2023-08-01

申请号：US16887219

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang ,  Ching-Feng Fu

IPC: H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L29/423

CPC classification number: H01L29/42372 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

Abstract: A semiconductor device including source/drain contacts extending into source/drain regions, below topmost surfaces of the source/drain regions, and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a first gate stack over the semiconductor substrate and surrounding four sides of the first channel region; a first epitaxial source/drain region adjacent the first gate stack and the first channel region; and a first source/drain contact coupled to the first epitaxial source/drain region, a bottommost surface of the first source/drain contact extending below a topmost surface of the first channel region.

公开(公告)号：US20220302298A1

公开(公告)日：2022-09-22

申请号：US17832930

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US20170062559A1

公开(公告)日：2017-03-02

申请号：US15349100

申请日：2016-11-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Bao-Ru Young ,  Wei Cheng Wu ,  Kong-Pin Chang ,  Chia Ming Liang ,  Meng-Fang Hsu ,  Ching-Feng Fu ,  Shih-Ting Hung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/66651 ,  H01L29/7833 ,  H01L29/7851

Abstract: Some embodiments of the present disclosure relate to a method. In this method, a semiconductor substrate, which has an active region disposed in the semiconductor substrate, is received. A shallow trench isolation (STI) structure is formed to laterally surround the active region. An upper surface of the active region bounded by the STI structure is recessed to below an upper surface of the STI structure. The recessed upper surface extends continuously between inner sidewalls of the STI structure and leaves upper portions of the inner sidewalls of the STI structure exposed. A semiconductor layer is epitaxially grown on the recessed surface of the active region between the inner sidewalls of the STI structure. A gate dielectric is formed over the epitaxially-grown semiconductor layer. A conductive gate electrode is formed over the gate dielectric.

Abstract translation: 本公开的一些实施例涉及一种方法。 在该方法中，接收具有设置在半导体衬底中的有源区的半导体衬底。 形成浅沟槽隔离（STI）结构以横向围绕有源区域。 由STI结构限定的有源区的上表面凹入到STI结构的上表面的下方。 凹陷的上表面在STI结构的内侧壁之间连续延伸，并且使STI结构的内侧壁的上部露出。 在STI结构的内侧壁之间的有源区的凹面上外延生长半导体层。 在外延生长的半导体层上形成栅极电介质。 在栅极电介质上形成导电栅电极。

公开(公告)号：US20140264725A1

公开(公告)日：2014-09-18

申请号：US13854507

申请日：2013-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Bao-Ru Young ,  Wei Cheng Wu ,  Kong-Pin Chang ,  Chia Ming Liang ,  Meng-Fang Hsu ,  Ching-Feng Fu ,  Shih-Ting Hung

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/66651 ,  H01L29/7833 ,  H01L29/7851

Abstract: The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.

Abstract translation: 所描述的实施例提供了用于蚀刻半导体主体上的有源区域并且外延沉积覆盖有源区域的半导体层的方法和半导体器件区域。 这些方法可以减轻或消除随后与STI科技相关的制造过程中遇到的问题。

公开(公告)号：US20240395556A1

公开(公告)日：2024-11-28

申请号：US18791044

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu

IPC: H01L21/306 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.

公开(公告)号：US11735667B2

公开(公告)日：2023-08-22

申请号：US17832930

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/7682 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.