公开(公告)号：US10510795B1

公开(公告)日：2019-12-17

申请号：US16516451

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

公开(公告)号：US10163959B2

公开(公告)日：2018-12-25

申请号：US14942441

申请日：2015-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yuichiro Yamashita ,  Chun-Hao Chuang ,  Hirofumi Sumi

IPC: H01L27/146

Abstract: An image sensor structure and a method for forming the same are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure formed at the front side of the substrate and a backside isolation structure formed at the back side of the substrate.

公开(公告)号：US20170301718A1

公开(公告)日：2017-10-19

申请号：US15097319

申请日：2016-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Dun-Nian Yaung ,  Wei-Chieh Chiang

IPC: H01L27/146 ,  G03B13/36 ,  H04N5/374

CPC classification number: H01L27/14645 ,  G03B13/36 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H04N5/3696 ,  H04N5/374 ,  H04N5/37457

Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the image sensor has first and second image sensing pixels arranged one next to another in a row. Each of the first and second image sensing pixels respectively have a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate. The right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels. The left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line.

公开(公告)号：US09564468B2

公开(公告)日：2017-02-07

申请号：US14663899

申请日：2015-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 金属网格覆盖半导体衬底，并且由分别围绕光电二极管的外周的金属栅格段组成，使得金属栅格内的第一开口分别覆盖在光电二极管上。 低n栅格分别由围绕光电二极管的相应外周的低n栅格段组成，使得低n栅格内的第二开口分别覆盖光电二极管。 滤光器布置在光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 衬底隔离栅格延伸到半导体衬底中，并且由分别围绕光电二极管外周的隔离栅格段组成。 还提供了用于制造BSI像素传感器的方法。

公开(公告)号：US20160276395A1

公开(公告)日：2016-09-22

申请号：US14663918

申请日：2015-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 复合网格包括金属网格和低折射率（low-n）网格。 金属栅格包括覆盖半导体衬底并对应于一个光电二极管的第一开口。 低n栅格包括覆盖半导体衬底并对应于光电二极管中的一个的第二开口。 彩色滤光器布置在相应的光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 滤色片的上表面相对于复合网格的上表面偏移。 还提供了用于制造BSI像素传感器的方法。

公开(公告)号：US12154924B2

公开(公告)日：2024-11-26

申请号：US17236311

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L31/0216 ,  H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US11329083B2

公开(公告)日：2022-05-10

申请号：US16227138

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hau Wu ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Cheng Yu Huang

IPC: H01L27/146

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

公开(公告)号：US11158662B2

公开(公告)日：2021-10-26

申请号：US16695575

申请日：2019-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US20210183922A1

公开(公告)日：2021-06-17

申请号：US17019502

申请日：2020-09-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146 ,  G01J1/44 ,  G01J1/02

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.

公开(公告)号：US10991739B2

公开(公告)日：2021-04-27

申请号：US16837312

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.