公开(公告)号：US20230118617A1

公开(公告)日：2023-04-20

申请号：US18066934

申请日：2022-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC: H01L21/306 ,  B24B37/24 ,  H01L21/321

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

公开(公告)号：US20220367257A1

公开(公告)日：2022-11-17

申请号：US17869560

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US20210313190A1

公开(公告)日：2021-10-07

申请号：US17353222

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

公开(公告)号：US12249542B2

公开(公告)日：2025-03-11

申请号：US18512682

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US20240217054A1

公开(公告)日：2024-07-04

申请号：US18610375

申请日：2024-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC classification number: B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US20240087951A1

公开(公告)日：2024-03-14

申请号：US18512682

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76877 ,  H01L29/66795

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US11854827B2

公开(公告)日：2023-12-26

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08 ,  C09K3/14 ,  B01F33/452

CPC classification number: H01L21/3212 ,  B01F33/452 ,  B24B37/04 ,  B24B57/02 ,  C09K3/1427

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US20210327720A1

公开(公告)日：2021-10-21

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09K3/14 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.