公开(公告)号：US11854827B2

公开(公告)日：2023-12-26

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08 ,  C09K3/14 ,  B01F33/452

CPC classification number: H01L21/3212 ,  B01F33/452 ,  B24B37/04 ,  B24B57/02 ,  C09K3/1427

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US20210327720A1

公开(公告)日：2021-10-21

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09K3/14 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US20240395562A1

公开(公告)日：2024-11-28

申请号：US18790908

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306 ,  H01L21/768

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

公开(公告)号：US12030159B2

公开(公告)日：2024-07-09

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/64

CPC classification number: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/6456

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230321789A1

公开(公告)日：2023-10-12

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  G01N21/64 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

CPC classification number: B24B49/12 ,  G01N21/6456 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20210313190A1

公开(公告)日：2021-10-07

申请号：US17353222

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.