公开(公告)号：US11569125B2

公开(公告)日：2023-01-31

申请号：US16912369

申请日：2020-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Allen Ke ,  Yi-Wei Chiu ,  Hung Jui Chang ,  Yu-Wei Kuo

IPC: H01L21/768 ,  H01L21/74 ,  H01L21/48 ,  H01L23/522 ,  H01L23/532

Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

公开(公告)号：US20180166321A1

公开(公告)日：2018-06-14

申请号：US15672123

申请日：2017-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Kai SUN ,  Yi-Wei Chiu ,  Hung Jui Chang ,  Chia-Ching Tsai

IPC: H01L21/762 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/423 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/76224 ,  H01L21/28088 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/768 ,  H01L21/76816 ,  H01L29/10 ,  H01L29/423 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/517

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having reduced trench loading effect. The present disclosure provides a novel multi-layer cap film incorporating one or more oxygen-based layers for reducing trench loading effects in semiconductor devices. The multi-layer cap film can be made of a metal hard mask layer and one or more oxygen-based layers. The metal hard mask layer can be formed of titanium nitride (TiN). The oxygen-based layer can be formed of tetraethyl orthosilicate (TEOS).

公开(公告)号：US12266567B2

公开(公告)日：2025-04-01

申请号：US17731053

申请日：2022-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Jhih Shen ,  Yi-Wei Chiu ,  Hung Jui Chang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/522

Abstract: Implementations of the present disclosure provide methods for preventing contact damage or oxidation after via/trench opening formation. In one example, the method includes forming an opening in a structure on the substrate to expose a portion of a surface of an electrically conductive feature, and bombarding a surface of a mask layer of the structure using energy species formed from a plasma to release reactive species from the mask layer, wherein the released reactive species form a barrier layer on the exposed surface of the electrically conductive feature.

公开(公告)号：US20220254682A1

公开(公告)日：2022-08-11

申请号：US17731053

申请日：2022-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Jhih Shen ,  Yi-Wei Chiu ,  Hung Jui Chang

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  H01L21/285

Abstract: Implementations of the present disclosure provide methods for preventing contact damage or oxidation after via/trench opening formation. In one example, the method includes forming an opening in a structure on the substrate to expose a portion of a surface of an electrically conductive feature, and bombarding a surface of a mask layer of the structure using energy species formed from a plasma to release reactive species from the mask layer, wherein the released reactive species form a barrier layer on the exposed surface of the electrically conductive feature.

公开(公告)号：US20190148116A1

公开(公告)日：2019-05-16

申请号：US16038825

申请日：2018-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chi LIN ,  Yi-Wei Chiu ,  Hung Jui Chang ,  Chin-Hsing Lin ,  Yu Lun Ke

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.