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    Trench isolation structure for image sensors
    11.
    发明授权
    Trench isolation structure for image sensors 有权

    公开(公告)号：US11862654B2

    公开(公告)日：2024-01-02

    申请号：US17150014

    申请日：2021-01-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

    IPC: H01L27/146

    CPC classification number: H01L27/14632 ,  H01L27/14687 ,  H01L27/14643

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS
    12.
    发明申请
    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS 有权

    公开(公告)号：US20220231066A1

    公开(公告)日：2022-07-21

    申请号：US17150014

    申请日：2021-01-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

    IMAGE SENSOR SCHEME FOR OPTICAL AND ELECTRICAL IMPROVEMENT
    15.
    发明申请
    IMAGE SENSOR SCHEME FOR OPTICAL AND ELECTRICAL IMPROVEMENT 有权

    公开(公告)号：US20210225919A1

    公开(公告)日：2021-07-22

    申请号：US17219960

    申请日：2021-04-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

    IPC: H01L27/146

    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a photodetector arranged within a substrate. The substrate has surfaces defining one or more protrusions arranged along a first side of the substrate over the photodetector. One or more isolation structures are arranged within one or more trenches defined by sidewalls of the substrate arranged on opposing sides of the photodetector. The one or more trenches extend from the first side of the substrate to within the substrate. The one or more isolation structures respectively include a reflective medium configured to reflect electromagnetic radiation.

    Narrow band filter with high transmission
    16.
    发明授权
    Narrow band filter with high transmission 有权

    公开(公告)号：US10651220B2

    公开(公告)日：2020-05-12

    申请号：US16156061

    申请日：2018-10-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

    IPC: H01L27/146 ,  H01L31/0216

    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

    IMAGE SENSOR SCHEME FOR OPTICAL AND ELECTRICAL IMPROVEMENT
    17.
    发明申请
    IMAGE SENSOR SCHEME FOR OPTICAL AND ELECTRICAL IMPROVEMENT 审中-公开

    公开(公告)号：US20190067355A1

    公开(公告)日：2019-02-28

    申请号：US15688077

    申请日：2017-08-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

    IPC: H01L27/146

    Abstract: The present disclosure relates to an image sensor integrated chip having a deep trench isolation (DTI) structure having a reflective element. In some embodiments, the image sensor integrated chip includes an image sensing element arranged within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element and one or more absorption enhancement layers are arranged over and between the plurality of protrusions. A plurality of DTI structures are arranged within trenches disposed on opposing sides of the image sensing element and extend from the first side of the substrate to within the substrate. The plurality of DTI structures respectively include a reflective element having one or more reflective regions configured to reflect electromagnetic radiation. By reflecting electromagnetic radiation using the reflective elements, cross-talk between adjacent pixel regions is reduced, thereby improving performance of the image sensor integrated chip.

    Method for forming the front-side illuminated image sensor device structure with light pipe
    18.
    发明授权
    Method for forming the front-side illuminated image sensor device structure with light pipe 有权

    公开(公告)号：US10163973B2

    公开(公告)日：2018-12-25

    申请号：US15461719

    申请日：2017-03-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Feng-Kuei Chang ,  Keng-Yu Chou ,  Jen-Cheng Liu ,  Jeng-Shyan Lin

    IPC: H01L27/146 ,  G02B6/43 ,  G02B6/42

    Abstract: A method for forming an FSI image sensor device structure is provided. The method includes forming a pixel region in a substrate and forming a dielectric layer over the substrate. The method includes forming a trench through the dielectric layer, and the trench includes a top portion and a bottom portion, and the trench is directly above the pixel region. The method includes forming a protection layer in the bottom portion of the trench and enlarging a top width of the top portion of the trench, and the trench has a wide top portion and a narrow bottom portion. The wide top portion has top sidewall surfaces, the narrow bottom portion has bottom sidewall surfaces, and the top sidewall surfaces taper gradually toward the bottom sidewall surfaces. The method includes filling a transparent dielectric layer in the trench to form a light pipe.

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