公开(公告)号：US20230411193A1

公开(公告)日：2023-12-21

申请号：US17843228

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jung HUANG ,  Y.Y. LEE ,  Kuang Huan HSU ,  Li-Hsin CHU ,  Jen-Ti WANG ,  Chieh HSU

IPC: H01L21/677

CPC classification number: H01L21/67724

Abstract: When there is an interruption in power to an area of an integrated circuit manufacturing facility, product may be stranded in a vehicle mounted to an automated material handling system. An automated rescue vehicle can be deployed to retrieve the stranded vehicle so that a payload carried by that vehicle can be recovered and processing can resume. The rescue vehicle can carry a battery payload. The battery payload provides backup power while the rescue operation is performed. With such an automated system, no human intervention is needed to recover product during a power outage. In addition to improving wafer throughput during the power outage, such a rescue operation may prevent quality degradation for time-critical sequences of processing operations.

公开(公告)号：US20230230839A1

公开(公告)日：2023-07-20

申请号：US18126861

申请日：2023-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jung HUANG ,  Li-Hsin CHU ,  Po-Feng TSAI ,  Henry PENG ,  Kuang Huan HSU ,  Tsung Wei CHEN ,  Yung-Lin HSU

IPC: H01L21/265 ,  C23C14/54 ,  C23C14/48 ,  H01L21/66

CPC classification number: H01L21/26586 ,  C23C14/54 ,  C23C14/48 ,  H01L22/14

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

公开(公告)号：US20160240578A1

公开(公告)日：2016-08-18

申请号：US15017571

申请日：2016-02-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chiao-Chi WANG ,  Chung-Chuan TSENG ,  Li-Hsin CHU ,  Chia-Wei LIU

IPC: H01L27/146 ,  H01L31/113

CPC classification number: H01L27/14643 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L31/1136

Abstract: A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

Abstract translation: 半导体器件包括衬底，逻辑门结构，感光栅极结构，硬掩模层，第一间隔物，第一源极，第一漏极，第二间隔物，第二源极和第二漏极。 逻辑门结构和感光栅结构设置在衬底的表面上。 硬掩模层覆盖逻辑门结构，感光栅结构和衬底的表面。 第一间隔物覆盖与该逻辑门结构的侧壁一致的硬掩模层。 第一源极和漏极分别设置在逻辑门结构的两个相对侧的衬底中。 第二间隔物覆盖与光敏栅极结构的侧壁共形的硬掩模层。 第二源极和漏极分别在感光栅极结构的两个相对侧设置在衬底中。

公开(公告)号：US20150087104A1

公开(公告)日：2015-03-26

申请号：US14037890

申请日：2013-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chung-Chuan TSENG ,  Chia-Wei LIU ,  Li-Hsin CHU ,  Yu-Hsiang TSAI

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/1126

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract translation: 提供背面照明图像传感器装置结构的机构的实施例。 制造背面照明图像传感器装置结构的方法包括提供衬底并在衬底上形成多晶硅层。 该方法还包括在多晶硅层上形成缓冲层，并在缓冲层上形成蚀刻停止层。 所述方法还包括在所述蚀刻停止层上形成硬掩模层并且对所述硬掩模层进行构图以在所述硬掩模层中形成开口。 该方法还包括通过打开硬掩模层来执行注入工艺，以在衬底中形成掺杂区域并通过第一去除工艺去除硬掩模层。 该方法还包括通过第二去除工艺去除蚀刻停止层，并通过第三去除工艺去除缓冲层。