公开(公告)号：US20230013260A1

公开(公告)日：2023-01-19

申请号：US17716522

申请日：2022-04-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Jhih LIN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  G03F1/24 ,  G03F1/56 ,  G03F7/09

Abstract: A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.

公开(公告)号：US20220342292A1

公开(公告)日：2022-10-27

申请号：US17481673

申请日：2021-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Hsun LIN ,  Pei-Cheng HSU ,  Ching-Fang YU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

公开(公告)号：US20220244634A1

公开(公告)日：2022-08-04

申请号：US17390603

申请日：2021-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/64 ,  G03F7/20 ,  G03F1/82 ,  B82Y40/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

公开(公告)号：US20220121101A1

公开(公告)日：2022-04-21

申请号：US17347322

申请日：2021-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kevin TANADY ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Tzu-Yi WANG ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

公开(公告)号：US20210405519A1

公开(公告)日：2021-12-30

申请号：US17090825

申请日：2020-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033 ,  H01L21/027

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

公开(公告)号：US20210223679A1

公开(公告)日：2021-07-22

申请号：US16744732

申请日：2020-01-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/60

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20210223678A1

公开(公告)日：2021-07-22

申请号：US16746640

申请日：2020-01-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/22

Abstract: An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.

公开(公告)号：US20220382148A1

公开(公告)日：2022-12-01

申请号：US17483302

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F7/004 ,  H01L21/033

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

公开(公告)号：US20210333717A1

公开(公告)日：2021-10-28

申请号：US17086299

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Che HSIEH ,  Tzu-Yi WANG ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Huan-Ling LEE

IPC: G03F7/20 ,  H05G2/00 ,  G03F7/075 ,  G03F7/09

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

公开(公告)号：US20210200078A1

公开(公告)日：2021-07-01

申请号：US17083348

申请日：2020-10-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Wen-Chang HSUEH

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/20 ,  G03F1/48 ,  H01L21/033

Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.