公开(公告)号：US20170229396A1

公开(公告)日：2017-08-10

申请号：US15016866

申请日：2016-02-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-I YANG ,  Tien-I BAO ,  Tien-Lu LIN ,  Wei-Chen CHU

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC classification number: H01L23/5283 ,  H01L21/76877 ,  H01L21/76892 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53276

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and an interconnect structure formed over the substrate. The interconnect structure includes a first dielectric layer formed over the substrate, and a first graphene layer formed in and on the first dielectric layer. The first graphene layer includes a first portion in the first dielectric layer and a second portion on the first dielectric layer and a first insulating layer formed over the first portion of the first graphene layer.

公开(公告)号：US20160118336A1

公开(公告)日：2016-04-28

申请号：US14524228

申请日：2014-10-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Tai-I YANG ,  Yu-Chieh LIAO ,  Tien-Lu LIN ,  Tien-I BAO

IPC: H01L23/522 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L23/5226 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L29/41758 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other.

Abstract translation: 提供半导体器件结构。 半导体器件结构包括半导体衬底。 半导体器件结构包括半导体衬底上的第一电介质层。 半导体器件结构包括嵌入在第一介电层中的第一导线。 半导体器件结构包括在第一介电层和第一导电线上的第二介电层。 半导体器件结构包括在第二介电层上的第二导电线。 第二介电层位于第一导线与第二导线之间。 半导体器件结构包括通过第二介电层的导电柱，以将第一导电线电连接到第二导电线。 导电柱彼此间隔开。

公开(公告)号：US20210118782A1

公开(公告)日：2021-04-22

申请号：US16656879

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan HUANG ,  Hsiang-Ku SHEN ,  Hui-Chi CHEN ,  Tien-I BAO ,  Dian-Hau CHEN ,  Yen-Ming CHEN

IPC: H01L23/495 ,  H01L23/522 ,  H01L23/48

Abstract: A package structure and method for forming the same are provided. The package structure includes a conductive layer formed over a first substrate, and a dielectric layer formed over the conductive layer. The package structure includes a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer, and a shielding layer formed over the MIM capacitor. The shielding layer is insulated from the MIM capacitor by the dielectric layer. The package structure also includes a first through via formed through the MIM capacitor, and the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer.

公开(公告)号：US20170213791A1

公开(公告)日：2017-07-27

申请号：US15007779

申请日：2016-01-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Fang CHENG ,  Chi-Lin TENG ,  Hai-Ching CHEN ,  Hsin-Yen HUANG ,  Tien-I BAO ,  Jung-Hsun TSAI

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/7681 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a cover layer covering a first inner wall of the first opening. The cover layer has a second opening exposing the first conductive structure. The cover layer includes a metal oxide. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the cover layer. The second conductive structure is electrically connected to the first conductive structure.

公开(公告)号：US20170140982A1

公开(公告)日：2017-05-18

申请号：US14942386

申请日：2015-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsi-Wen TIEN ,  Carlos H. DIAZ ,  Chung-Ju LEE ,  Shau-Lin SHUE ,  Tien-I BAO

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/3105 ,  H01L23/522 ,  H01L21/311 ,  H01L21/288

CPC classification number: H01L21/7688 ,  H01L21/288 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53228 ,  H01L2221/1063

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a first dielectric layer over a substrate and forming a sacrificial layer over the first dielectric layer. The method further includes forming an opening in the sacrificial layer and etching the first dielectric layer to form a via hole through the opening. The method further includes forming a conductive structure in the via hole and the opening and removing the sacrificial layer to expose an upper portion of the conductive structure. The method further includes forming a second dielectric layer around the upper portion of the conductive material.