公开(公告)号：US11728157B2

公开(公告)日：2023-08-15

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20220122884A1

公开(公告)日：2022-04-21

申请号：US17646024

申请日：2021-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US10998184B2

公开(公告)日：2021-05-04

申请号：US16437352

申请日：2019-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US10325772B2

公开(公告)日：2019-06-18

申请号：US15416331

申请日：2017-01-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306

Abstract: A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.