公开(公告)号：US20210302839A1

公开(公告)日：2021-09-30

申请号：US17150389

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Ming-Hui WENG ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: G03F7/16 ,  G03F7/11 ,  H01L21/027

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

公开(公告)号：US20210050451A1

公开(公告)日：2021-02-18

申请号：US17074287

申请日：2020-10-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Che-Yu LIN ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chan-Lon YANG

IPC: H01L29/78 ,  H01L23/544 ,  H01L21/762 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/10 ,  H01L29/167 ,  H01L29/66

Abstract: A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer is formed on the top surface of the substrate. The epitaxial layer is patterned to form a fin.

公开(公告)号：US20170342561A1

公开(公告)日：2017-11-30

申请号：US15169037

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo LIN ,  Yi-Hung LIN ,  Jr-Hung LI ,  Tze-Liang LEE ,  Ting-Gang CHEN ,  Chung-Ting KO

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/02

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US20170154996A1

公开(公告)日：2017-06-01

申请号：US14954661

申请日：2015-11-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Che-Yu LIN ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chan-Lon YANG

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/167 ,  H01L29/10 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/7851 ,  H01L21/02057 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/76224 ,  H01L23/544 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: A method for manufacturing an active region of a semiconductor device includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the substrate. The top surface of the substrate is baked. An epitaxial layer is formed on the top surface of the substrate.

公开(公告)号：US20230378361A1

公开(公告)日：2023-11-23

申请号：US18353875

申请日：2023-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Che-Yu LIN ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chan-Lon YANG

IPC: H01L29/78 ,  H01L23/544 ,  H01L21/762 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/10 ,  H01L29/167 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L23/544 ,  H01L21/76229 ,  H01L21/02057 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: A device includes a fin structure, a gate structure, a first source/drain epitaxial structure and, a second source/drain epitaxial structure. The fin structure over a substrate and includes a bottom portion protruding from the substrate and a top portion over the bottom portion. An interface between the bottom portion and the top portion comprises oxygen and has an oxygen concentration lower than about 1.E+19 atoms/cm3. The gate structure covers the fin structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are over the top portion of the fin structure and on opposite sides of the gate structure.

公开(公告)号：US20220028684A1

公开(公告)日：2022-01-27

申请号：US17156365

申请日：2021-01-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu CHEN ,  Chib-Cheng LIU ,  Yi-Ohen KUO ,  Jr-Hung Li ,  Tze-Liang LEE ,  Ming-Hui WENG ,  Yahru CHENG

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

公开(公告)号：US20210305040A1

公开(公告)日：2021-09-30

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20170365561A1

公开(公告)日：2017-12-21

申请号：US15187027

申请日：2016-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Hau SHIU ,  Chung-Chi KO ,  Tze-Liang LEE ,  Yu-Yun PENG

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/31144 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76808

Abstract: A method for manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate and forming a second insulating film on the first insulating film. The first insulating film is a tensile film having a first tensile stress and the second insulating film is either a tensile film having a second tensile stress that is less than the first tensile stress or a compressive film. The first insulating film and second insulating film are formed of a same material. A metal hard mask layer is formed on the second insulating film.