公开(公告)号：US20220384239A1

公开(公告)日：2022-12-01

申请号：US17883128

申请日：2022-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun YANG ,  Yi-Ming LIN ,  Po-Wei LIANG ,  Chu-Han HSIEH ,  Chih-Lung CHENG ,  Po-Chih HUANG

IPC: H01L21/683 ,  C23C16/455 ,  H01L21/67

Abstract: A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.

公开(公告)号：US20200058532A1

公开(公告)日：2020-02-20

申请号：US16238001

申请日：2019-01-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chun YANG ,  Yi-Ming LIN ,  Chao-Hung WAN ,  Hsiu Hao HSU ,  Guan Jung CHEN ,  Po-Wei LIANG

IPC: H01L21/673 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455

Abstract: A humidity-controlled storage device includes a plurality of panels configured to form an enclosed volume. A first panel of the plurality of panels includes inlet and outlet ports. The storage device further includes a purge system with a gas inlet pipe, a gas supply system, and a gas extraction system. The gas inlet pipe includes a nozzle and a cylindrical portion coupled to the inlet port. The gas supply system is configured to supply a purge gas to the gas inlet pipe. The gas inlet pipe is configured to output the purge gas into the enclosed volume in a direction that creates a circular or an oval gas flow pattern within the enclosed volume. The gas extraction system is coupled to the outlet port and is configured to extract the purge gas from the enclosed volume.

公开(公告)号：US20190136373A1

公开(公告)日：2019-05-09

申请号：US16021448

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hung YEH ,  Tsung-Lin LEE ,  Yi-Ming LIN ,  Sheng-Chun YANG ,  Tung-Ching TSENG

IPC: C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  C23C16/455

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

公开(公告)号：US20240379380A1

公开(公告)日：2024-11-14

申请号：US18783352

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chun YANG ,  Po-Chih HUANG ,  Chih-Lung CHENG ,  Yi-Ming LIN ,  Chen-Hao LIAO ,  Min-Cheng CHUNG

IPC: H01L21/324 ,  H01L21/67

Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.

公开(公告)号：US20220356574A1

公开(公告)日：2022-11-10

申请号：US17869706

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Yi-Ming LIN ,  Chih-tsung LEE ,  Yun-Tzu CHIU ,  Chao-Hung WAN

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/50 ,  C23C16/455

Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

公开(公告)号：US20210079524A1

公开(公告)日：2021-03-18

申请号：US16570274

申请日：2019-09-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Yi-Ming LIN ,  Chih-tsung LEE ,  Yun-Tzu CHIU ,  Chao-Hung WAN

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/458

Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

公开(公告)号：US20210050460A1

公开(公告)日：2021-02-18

申请号：US16845005

申请日：2020-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/18

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.