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公开(公告)号：US5162886A
公开(公告)日：1992-11-10
申请号：US697441
申请日：1991-05-09
CPC分类号： H01L43/065 , Y10T428/265 , Y10T428/30
摘要： A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.
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公开(公告)号：US5221870A
公开(公告)日：1993-06-22
申请号：US767624
申请日：1991-09-30
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
CPC分类号： H03H9/68 , G06G7/195 , H03F13/00 , H03H9/02976
摘要： Surface acoustic wave devices making use of the interaction between surface acoustic wave and carriers include at least a semiconductor part, a piezoelectric layer and an intermediate insulating film. The devices of this invention include diamond or diamond-like carbon as the insulating film in contact with the piezoelectric layer. Since diamond or diamond-like carbon has the highest sound velocity, the surface acoustic wave velocity is extremely high in the piezoelectric layer in contact with diamond or diamond-like carbon. The high surface acoustic wave velocity alleviates the need of producing fine inter digital transducers. This invention is applicable to surface acoustic wave phase-shifters, surface acoustic amplifiers and surface acoustic convolvers.
摘要翻译： 利用声表面波和载流子之间的相互作用的表面声波装置至少包括半导体部分，压电层和中间绝缘膜。 本发明的装置包括金刚石或类金刚石碳作为与压电层接触的绝缘膜。 由于金刚石或类金刚石碳具有最高的声速，因此在与金刚石或类金刚石碳接触的压电层中，表面声波速度非常高。 高表面声波速度减轻了生产精细的数字间换能器的需要。 本发明适用于声表面波移相器，声表面放大器和表面声音卷积器。
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公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译： 一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。 通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。 晶片单调失真，失真高度H满足2微米
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公开(公告)号：US5160869A
公开(公告)日：1992-11-03
申请号：US634321
申请日：1990-12-26
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a diamond or diamond-like carbon layer, a ZnO piezoelectric layer and a comb-like electrode and has a structure having a large surface wave propagation velocity and a large electromechanical coupling factor which are achieved by defining a thickness of the ZnO layer and a mode.
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公开(公告)号：US5081438A
公开(公告)日：1992-01-14
申请号：US506191
申请日：1990-04-09
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
CPC分类号： H01C7/041 , H01C17/14 , Y10T29/49085
摘要： A thermistor having a temperature detecting part which has a temperature sensing part made of a vapor phase deposited semiconductive diamond film, a metal electrode layer formed on one surface of the semiconductive diamond film, and at least one lead wire connected with the metal electrode layer provided that at least 50% of a total volume of the temperature sensing part and the metal electrode layer is made of the vapor phase deposited diamond.
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公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
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17.发明授权
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译： 相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。 这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b） 。 叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。
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公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译： 表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。 表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。 位于一对叉指电极（2a，2b）之间的部分传播表面声波。 该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。 空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。
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公开(公告)号：US5571603A
公开(公告)日：1996-11-05
申请号：US393482
申请日：1995-02-24
申请人： Yoshiharu Utumi , Takahiro Imai , Naoji Fujimori
发明人： Yoshiharu Utumi , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B23/02 , C30B25/02 , C01B21/072
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , Y10T428/24942 , Y10T428/30
摘要： An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and process for producing these aluminum nitride film substrate.
摘要翻译： 一种含有单晶金刚石的氮化铝膜基片，其（111）面上具有（1）C轴取向氮化铝膜或（2）氮化铝单晶膜，所述氮化铝单晶膜的C面 晶体平行于所述单晶金刚石的（111）面，氮化铝膜基板包括其上具有（111）取向的金刚石多晶膜的基板，并且还具有C轴取向的氮化铝膜; 以及这些氮化铝膜基板的制造方法。
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公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.
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