COMPOSITE MATERIAL AND COATED CUTTING TOOL
    4.
    发明申请
    COMPOSITE MATERIAL AND COATED CUTTING TOOL 有权
    复合材料和涂层切割工具

    公开(公告)号:US20100255264A1

    公开(公告)日:2010-10-07

    申请号:US12677979

    申请日:2008-09-12

    IPC分类号: B32B3/10

    摘要: The present invention provides a composite material that is excellent in the bonding ability between a cemented carbide layer and a cermet layer is excellent and deformation after sintering can be suppressed and a coated cutting tool having a base containing the composite material. A composite material 10ii is obtained by laminating a cemented carbide layer 11 and a cermet layer 12 and has the cemented carbide layer 11 on the surface side. The boundary between both the layers 11 and 12 has a concave portion 23, and the maximum depth Dmax of the concave portion 23 is 50 μm or more and 500 μm or lower. When the thickness of the composite material is defined as h1 and the thickness of the cemented carbide layer 11 is defined as h2, h2/h1 is in the range of more than 0.02 and 0.4 or lower. By providing the concave portion 23 to the boundary, both the layers 11 and 12 are sufficiently bound and the bonding ability therebetween is excellent. Due to the fact the cemented carbide layer 11 satisfies the given thickness mentioned above, the composite material 10 is difficult to deform.

    摘要翻译: 本发明提供了一种在硬质合金层和金属陶瓷层之间的接合能力优异的复合材料,并且可以抑制烧结后的变形,以及具有含有复合材料的基材的涂层切削工具。 通过层叠硬质合金层11和金属陶瓷层12并且在表面侧具有硬质合金层11来获得复合材料10ii。 两层11,12之间的边界具有凹部23,凹部23的最大深度Dmax为50μm以上且500μm以下。 当复合材料的厚度定义为h1,硬质合金层11的厚度定义为h2时,h2 / h1在大于0.02和0.4以下的范围内。 通过将凹部23设置在边界上,层11和12都被充分地结合,并且它们之间的结合能力优异。 由于硬质合金层11满足上述给定的厚度,复合材料10难以变形。

    Coated tool of cemented carbide
    5.
    发明授权
    Coated tool of cemented carbide 有权
    硬质合金涂层工具

    公开(公告)号:US06187421B1

    公开(公告)日:2001-02-13

    申请号:US09331857

    申请日:1999-06-28

    IPC分类号: B23B2714

    摘要: The principal object of the present invention is to provide a coated cemented carbide tool whose both properties of breakage resistance and wear resistance are improved and whose life is lengthened. The present invention has been made to achieve this object and is related with a coated cemented carbide cutting tool comprising a substrate consisting of a matrix of WC and a binder phase of an iron group metal and a plurality of coated layers provided on a surface of the substrate, in which (a) an innermost layer, adjacent to the substrate, of the coated layers consists essentially of titanium nitride having a thickness of 0.1 to 3 &mgr;m, (b) on a mirror-polished cross-sectional microstructure of the said tool, an average crack interval in the coated film on a ridge of a cutting edge and/or rake face is smaller than an average crack interval in the coated layer on a flank face, (c) at least 50% of the cracks in the coated film on the said ridge of the cutting edge and/or rake face have ends of the cracks in the said innermost titanium nitride layer, in a layer above the titanium nitride layer or in an interface between these layers and (d) an average crack length in the coated film on the said ridge of the cutting edge and/or rake face is shorter than an average film thickness on the flank face. According to the present invention, quantitatively specifying the crack intervals and positions of the ends of the cracks in the coated layer results in excellent breakage resistance as well as wear resistance.

    摘要翻译: 本发明的主要目的是提供一种涂层的硬质合金刀具,其耐破坏性和耐磨性两方面都得到改善,寿命延长。本发明是为了实现这一目的而进行的,并且涉及一种涂覆硬质合金 切削工具包括由基体WC和基体的粘结相组成的基底和设置在基底表面上的多个涂层,其中(a)与基底相邻的最内层, 涂覆层基本上由厚度为0.1至3μm的氮化钛组成,(b)在所述工具的镜面研磨的横截面微观结构上,切割边缘的脊上的涂覆膜的平均裂纹间隔和/ 或前刀面小于侧面上的涂层中的平均裂纹间隔,(c)切削刃和/或前刀面的所述脊上的涂膜中的至少50%的裂纹具有末端 在最上层的氮化钛层中,在氮化钛层上方或这些层之间的界面中的层中的裂纹(d)在切割边缘的所述脊上的涂覆膜和/或耙子中的平均裂纹长度 表面比侧面上的平均膜厚度短。根据本发明,定量确定涂层中的裂纹的裂纹间隔和位置,从而具有优异的耐破坏性和耐磨性。

    Chemical vapor deposition method of high quality diamond
    6.
    发明授权
    Chemical vapor deposition method of high quality diamond 失效
    高品质钻石的化学气相沉积方法

    公开(公告)号:US6162412A

    公开(公告)日:2000-12-19

    申请号:US115783

    申请日:1993-09-03

    IPC分类号: C23C16/27

    CPC分类号: C23C16/277 C23C16/271

    摘要: Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:.alpha.=B.times.(A-1.2C) (I)provided that a is not larger than 13, or B is not larger than 20.

    摘要翻译: 通过CVD法制备具有大的导热系数的金刚石,其中反应气体在相对于氢气(A%)的碳原子浓度,氮气浓度相对于 整个反应气体(B ppm)和氧原子相对于氢气的浓度(C%)满足以下等式:α= Bx(A-1.2C)(I),条件是a不大于13,或 B不大于20。

    Noncontact temperature distribution measuring apparatus
    7.
    发明授权
    Noncontact temperature distribution measuring apparatus 有权
    非接触式温度分布测量装置

    公开(公告)号:US6089750A

    公开(公告)日:2000-07-18

    申请号:US159628

    申请日:1998-09-24

    摘要: A material to be cut has a face to be cut with a cutting tool, and a cutout which temporarily brings the cutting tool into a noncontact state. Images of the cutting tool during the period when it attains an exposed state by passing over the cutout are captured with a camera mechanism at an interval of a predetermined delay time .tau.. A plurality of image information items obtained by these capturing operations include temperature change information of each location as the cutting tool gradually passes from the point of instant when it enters the cutout. Therefore, the image information items are arranged in relation to the exposure time from the point of instant, and a two-dimensional temperature distribution of the cutting tool at the point of instance is computed according to the tendency of change in image information.

    摘要翻译: 要切割的材料具有用切割工具切割的面和临时使切割工具进入非接触状态的切口。 在相机机构以预定的延迟时间τ的间隔捕获在通过切口处获得暴露状态的期间中的切割工具的图像。 通过这些捕获操作获得的多个图像信息项目包括当切割工具进入切口时从瞬间逐渐过去的每个位置的温度变化信息。 因此,相对于从即时的曝光时间来设置图像信息项,并且根据图像信息的变化趋势来计算切割工具在实例点的二维温度分布。

    Methods of synthesizing and polishing a flat diamond film and
free-standing diamond film
    10.
    发明授权
    Methods of synthesizing and polishing a flat diamond film and free-standing diamond film 失效
    合成和抛光平面金刚石薄膜和独立金刚石薄膜的方法

    公开(公告)号:US5587013A

    公开(公告)日:1996-12-24

    申请号:US379692

    申请日:1995-01-27

    摘要: A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880.degree. C. to 950.degree. C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800.degree. C. to 850.degree. C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis. A multilayered diamond film with an arbitrary curvature can be produced by selecting the production conditions (a) and (b), and the thicknesses of the potential-convex layers and the potential-concave layers.The diamond films still fixed on the substrate can be polished by an ordinary polishing apparatus, since the film is flat. A polished flat diamond film can be obtained by eliminating the substrate.

    摘要翻译: 通过在非金刚石基底上交替生长至少一对电位 - 凹金刚石层和潜在 - 凸出的金刚石层并消除基底来制造平坦独立的金刚石膜。 在(b)条件下通过CVD法制造电位凹形膜,其特征在于基板温度为880℃至950℃,烃比为2.5vol%至3.5vol%。 在由800〜850℃的基板温度和0.5vol%〜1.5vol%的烃比率表征的条件(a)下,通过CVD法制造电位凸膜。 条件(a)尽管沉积速度慢,但也可以制成具有良好晶体质量的电势凸膜。 优选使用较薄的电势凸起膜和较厚的电势 - 凹膜的组合来缩短总合成时间。 可以通过选择生产条件(a)和(b)以及电位 - 凸层和电位 - 凹陷层的厚度来制造具有任意曲率的多层金刚石薄膜。 仍然固定在基板上的金刚石膜可以由普通的抛光装置抛光,因为该膜是平的。 抛光的平面金刚石薄膜可以通过消除基底来获得。