公开(公告)号：US20080093673A1

公开(公告)日：2008-04-24

申请号：US11819369

申请日：2007-06-27

申请人： Nobuyuki Tamura ,  Ken Suzuki ,  Katsuhiro Ootani

发明人： Nobuyuki Tamura ,  Ken Suzuki ,  Katsuhiro Ootani

IPC分类号： H01L21/8238 ,  H01L29/94

CPC分类号： H01L21/823807 ,  H01L29/7843 ,  Y10S438/938

摘要： A semiconductor device includes a first MIS transistor on a first active region of a semiconductor substrate, the first MIS transistor including: a first gate insulating film provided on the first active region; a first gate electrode provided on the first gate insulating film; a first stressor insulating film provided on an upper face and side faces facing in a gate length direction of the first gate electrode such that first stress acts on a channel of the first MIS transistor in the gate length direction; and a first base insulating film provided on side faces of the first gate electrode facing in a gate width direction, wherein the side faces of the first gate electrode facing in the gate width direction are not covered with the first stressor insulating film.

摘要翻译： 半导体器件包括在半导体衬底的第一有源区上的第一MIS晶体管，第一MIS晶体管包括：设置在第一有源区上的第一栅极绝缘膜; 设置在所述第一栅极绝缘膜上的第一栅电极; 第一应力绝缘膜，设置在上表面和面对第一栅电极的栅极长度方向的侧面，使得第一应力作用在栅极长度方向上的第一MIS晶体管的沟道上; 以及第一基极绝缘膜，其设置在所述第一栅电极的面对栅极宽度方向的侧面上，其中所述第一栅电极的面对栅极宽度方向的侧面未被所述第一应力绝缘膜覆盖。

公开(公告)号：US20060151928A1

公开(公告)日：2006-07-13

申请号：US11222972

申请日：2005-09-12

申请人： Nobuyuki Tamura

发明人： Nobuyuki Tamura

IPC分类号： B60G15/00

CPC分类号： B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/45 ,  B60G2204/4502

摘要： A strut mount capable of reducing the weight and of intensifying the strength and having a good durability is provided. It comprises an inner cylinder, a vibration isolating base body and a pair of upper and lower brackets. The lower bracket is fabricated from aluminum alloy and includes a peripheral wall portion, a bottom wall portion and a first attachment flange while the upper bracket includes a second attachment flange and a lid wall portion. The first attachment flange has plural first through-holes for inserting plural attachment members, the second attachment flange has plural second through-holes for inserting the plural attachment members, and flange portions around the first through-holes of the first attachment flange bulge at their undersides to form respective thick-walled portions.

摘要翻译： 提供了能够减轻重量并增强强度并具有良好耐久性的支柱安装件。 它包括内筒，隔振基体和一对上下托架。 下支架由铝合金制成，并且包括周壁部分，底壁部分和第一附接凸缘，而上托架包括第二附接凸缘和盖壁部分。 第一安装凸缘具有用于插入多个安装构件的多个第一通孔，第二安装凸缘具有用于插入多个安装构件的多个第二通孔，并且在第一安装凸缘的第一安装凸缘的第一通孔周围的凸缘部分 下面形成相应的厚壁部分。

公开(公告)号：US06169307A

公开(公告)日：2001-01-02

申请号：US09206560

申请日：1998-12-08

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G01L29788

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性，并且可以在较低的电压下进行重写。 此外，由于提供了选择晶体管，所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

公开(公告)号：US09579841B2

公开(公告)日：2017-02-28

申请号：US14758394

申请日：2013-12-04

申请人： Shigeki Morikami ,  Nobuyuki Tamura ,  Sumito Sato

发明人： Shigeki Morikami ,  Nobuyuki Tamura ,  Sumito Sato

IPC分类号： B29C49/46 ,  B29C49/58 ,  B29D22/00 ,  B29C49/12 ,  B29L31/00 ,  B29C49/06 ,  B29C49/42

CPC分类号： B29C49/58 ,  B29C49/06 ,  B29C49/12 ,  B29C49/4289 ,  B29C49/46 ,  B29C2049/4602 ,  B29C2049/465 ,  B29C2049/4664 ,  B29C2049/5803 ,  B29C2049/5858 ,  B29C2049/5893 ,  B29D22/003 ,  B29L2031/712 ,  B29L2031/7158

摘要： A blow molding device, having: a mold; a blow nozzle tightly communicating with a mouth tubular part of a preform when the preform fitted in the mold; and a stretch rod, the blow molding device imparting shape to a container by longitudinally stretching the preform by means of the stretch rod and stretching the preform into an expanded shape by means of a pressurized liquid fed, via the blow nozzle, from a pressurized liquid feeding part separately provided, in which the blow nozzle has a support part for supporting the posture of the stretch rod, and a filling head part communicating with the mouth tubular part of the preform, the filling head part having a feed channel formed therein in the axial direction; and the support part and the filling head part are configured to be detachably coupled to each other in the vertical direction.

摘要翻译： 一种吹塑装置，具有：模具; 当所述预成型件装配在所述模具中时，所述吹塑喷嘴与预成型件的口部部分紧密连通; 以及伸缩杆，所述吹塑装置通过利用所述拉伸杆纵向拉伸所述预成型件而将容器形状赋予容器，并且通过所述吹塑喷嘴从加压液体供给的加压液体将所述预成型体拉伸成膨胀形状 所述喷嘴具有用于支撑所述拉伸杆的姿势的支撑部，以及与所述预成型体的所述口部连通的填充头部，所述填充头部具有形成在所述预成型体中的供给通道， 轴向; 并且所述支撑部和所述充填头部构造成能够在垂直方向上彼此可拆卸地联接。

公开(公告)号：US20140356475A1

公开(公告)日：2014-12-04

申请号：US14376053

申请日：2013-01-16

申请人： Sumito Sato ,  Nobuyuki Tamura ,  Takeshi Nagashima ,  Shigeki Morikami

发明人： Sumito Sato ,  Nobuyuki Tamura ,  Takeshi Nagashima ,  Shigeki Morikami

IPC分类号： B29C49/58 ,  B29C49/42 ,  B29C49/06

CPC分类号： B29C49/58 ,  B29C49/06 ,  B29C49/4289 ,  B29C2049/1242 ,  B29C2049/465 ,  B29C2049/5803 ,  B29C2049/5858

摘要： A blow molding device includes a blow nozzle to be inserted tightly into a mouth tube section of preform when the preform is inserted in a mold. The blow molding device also includes a pressurized liquid feeding unit and feeds a pressurized liquid from the pressurized liquid feeding unit into the preform through the blow nozzle to form a container into an expanded shape along a cavity of the mold. A valve mechanism, provided at a downstream end of a feed channel for the liquid in the blow nozzle, can open and close the feed channel so that when the valve mechanism is in a closed state, the liquid circulates between the feed channel and the pressurized liquid feeding unit, and when the valve mechanism is in an open state, the pressurized liquid is fed through the feed channel into the preform.

摘要翻译： 吹塑装置包括当将预成型件插入模具中时紧密地插入预成型件的口管部分中的吹塑喷嘴。 吹塑装置还包括加压液体供给单元，并且通过吹塑喷嘴将加压液体从加压液体供给单元供给到预成型件中，以沿着模具的空腔形成容器成扩展形状。 设置在用于吹塑喷嘴中的液体的进料通道的下游端的阀机构可以打开和关闭进料通道，使得当阀机构处于关闭状态时，液体在进料通道和加压的流体之间循环 液体供给单元，并且当阀机构处于打开状态时，加压液体通过进料通道进料到预成型件中。

公开(公告)号：US07271414B2

公开(公告)日：2007-09-18

申请号：US11336970

申请日：2006-01-23

申请人： Nobuyuki Tamura ,  Takehisa Kishimoto ,  Mizuki Segawa

发明人： Nobuyuki Tamura ,  Takehisa Kishimoto ,  Mizuki Segawa

IPC分类号： H01L31/112 ,  H01L27/082

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823864 ,  Y10S257/90

摘要： A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.

摘要翻译： 半导体器件包括第一导电类型的晶体管和第二导电类型的晶体管。 第一导电类型的晶体管包括形成在半导体衬底的第一区域上的第一栅极部分，形成在第一栅极部分的每个侧面上的第一侧壁，形成在第一侧壁和第一栅极部分之间的第一保护膜 ，以及第一导电型的延伸扩散层。 第二导电类型的晶体管包括形成在半导体衬底的第二区域上的第二栅极部分，形成在第二栅极部分的每个侧面上的第二侧壁，具有L形横截面的第二保护膜，并形成 在第二侧壁和第二栅极部分之间以及第二侧壁和半导体衬底之间，以及第二导电类型的延伸扩散层。

公开(公告)号：US20060170117A1

公开(公告)日：2006-08-03

申请号：US11336970

申请日：2006-01-23

申请人： Nobuyuki Tamura ,  Takehisa Kishimoto ,  Mizuki Segawa

发明人： Nobuyuki Tamura ,  Takehisa Kishimoto ,  Mizuki Segawa

IPC分类号： H01L27/088

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823864 ,  Y10S257/90

摘要： A semiconductor device includes a transistor of a first conductivity type and a transistor of a second conductivity type. The transistor of the first conductivity type includes a first gate portion formed on a first region of a semiconductor substrate, a first sidewall formed on each side face of the first gate portion, a first protecting film formed between the first sidewall and the first gate portion, and an extension diffusion layer of the first conductivity type. The transistor of the second conductivity type includes a second gate portion formed on a second region of the semiconductor substrate, a second sidewall formed on each side face of the second gate portion, a second protecting film having an L-shaped cross-section and formed between the second sidewall and the second gate portion and between the second sidewall and the semiconductor substrate, and an extension diffusion layer of the second conductivity type.

摘要翻译： 半导体器件包括第一导电类型的晶体管和第二导电类型的晶体管。 第一导电类型的晶体管包括形成在半导体衬底的第一区域上的第一栅极部分，形成在第一栅极部分的每个侧面上的第一侧壁，形成在第一侧壁和第一栅极部分之间的第一保护膜 ，以及第一导电型的延伸扩散层。 第二导电类型的晶体管包括形成在半导体衬底的第二区域上的第二栅极部分，形成在第二栅极部分的每个侧面上的第二侧壁，具有L形横截面的第二保护膜，并形成 在第二侧壁和第二栅极部分之间以及第二侧壁和半导体衬底之间，以及第二导电类型的延伸扩散层。

公开(公告)号：US06655666B2

公开(公告)日：2003-12-02

申请号：US10074663

申请日：2002-02-12

申请人： Nobuyuki Tamura ,  Shunichi Shinobu

发明人： Nobuyuki Tamura ,  Shunichi Shinobu

IPC分类号： F16F1300

CPC分类号： F16F13/14 ,  F16F2226/00

摘要： A liquid-sealed vibration-proof device capable of avoiding leakage of liquid upon press fitting of an outer cylinder is provided. An intermediate ring interposed between the outer cylinder and an antivibratory base is formed at its outer circumferential surface with two projecting streaks, the one on liquid chambers side being formed with cutouts. When the outer cylinder is press fitted to an attachment opening of a vehicle body, the liquid confined in a space enclosed between both projecting streaks can escape to the liquid chambers, so that liquid never leaks outside.

摘要翻译： 提供一种能够避免外筒压配合时的液体泄漏的液密防振装置。 插入在外筒和防振基座之间的中间环在其外周面上形成有两条突条，液室一侧形成有切口。 当外筒被压配合到车体的附接开口时，限制在两条突出条纹之间的空间中的液体可以逸出到液体室，使得液体不会泄漏到外部。

公开(公告)号：US06377490B1

公开(公告)日：2002-04-23

申请号：US09677844

申请日：2000-10-03

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G11C1604

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower volt age. Also, since the select transistor is provided, reading c an also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性并且可以在较低的电压时间进行重写。 此外，由于提供了选择晶体管，因此也可以在较低的电压下进行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

公开(公告)号：US20150246475A1

公开(公告)日：2015-09-03

申请号：US14431063

申请日：2013-08-01

申请人： Kenichi SUYAMA ,  Nobuyuki TAMURA ,  Sumito SATO

发明人： Kenichi Suyama ,  Nobuyuki Tamura ,  Sumito Sato

IPC分类号： B29C49/28

CPC分类号： B29C49/28 ,  B29C49/06 ,  B29C49/12 ,  B29C49/4289 ,  B29C49/58 ,  B29C2049/4294 ,  B29C2049/465 ,  B29C2049/4664 ,  B29C2049/5803 ,  B29L2031/7158 ,  B67C2003/227

摘要： Provided is a method for manufacturing a synthetic resin container, including: after the shaping of a container, drawing back a liquid inside the container to a pressurized liquid feeding unit side by a suckback mechanism disposed at a predetermined position in a feeding channel of the liquid from the pressurized liquid feeding unit to a mouth tube portion of a preform; closing the feeding channel by means of a valve mechanism disposed on the downstream side of the suckback mechanism; introducing a gas into the container so that the volume reduction deformation of the container resulting from the drawing back of the liquid is restored to its original shape; and adjusting a headspace inside the container with the amount of volume change associated with the volume reduction deformation.

摘要翻译： 本发明提供一种合成树脂容器的制造方法，其特征在于，在容器成形后，通过设置在所述液体的供给通道中的预定位置的反吸器机构将容器内的液体拉回到加压液体供给单元侧 从加压液体供给单元到预成型件的口管部分; 通过设置在反吸机构的下游侧的阀机构关闭进给通道; 将气体引入容器中，使得由液体拉出而产生的容器的体积减小变形恢复到其初始形状; 以及与容积减小变形相关联的体积变化量调节容器内的顶部空间。