SWASH PLATE TYPE COMPRESSOR
    12.
    发明申请
    SWASH PLATE TYPE COMPRESSOR 有权
    洗板式压缩机

    公开(公告)号:US20070292279A1

    公开(公告)日:2007-12-20

    申请号:US11694696

    申请日:2007-03-30

    IPC分类号: F04B1/12

    CPC分类号: F04B27/1018

    摘要: A swash plate includes a boss, which is mounted on the drive shaft, and a plate portion, which extends from the boss to be inclined with respect to the drive shaft. A rotary valve includes a suction passage, which sequentially connects cylinder bores in a suction stroke via an associated guide passage. An introduction guide communicates with the shaft bore to introduce the refrigerant gas in the swash plate chamber to the rotary valve. The introduction guide faces the boss and extends in the radial direction from the shaft bore beyond the boss. Therefore, suction efficiency of refrigerant gas from the swash plate chamber to the cylinder bore has improved.

    摘要翻译: 旋转斜盘包括安装在驱动轴上的凸台和从凸台延伸以相对于驱动轴倾斜的板部。 旋转阀包括抽吸通道,该抽吸通道经由相关联的引导通道在吸入行程中依次连接气缸孔。 引导引导件与轴孔连通,以将旋转斜盘室中的制冷剂气体引入旋转阀。 引导引导件面向凸台并且在径向方向上从轴孔延伸超过凸台。 因此,从斜盘室到气缸孔的制冷剂气体的吸入效率提高。

    Paper sheet supply apparatus
    13.
    发明申请
    Paper sheet supply apparatus 失效
    纸张供应装置

    公开(公告)号:US20070000748A1

    公开(公告)日:2007-01-04

    申请号:US11376106

    申请日:2006-03-16

    申请人: Takeshi Aoki

    发明人: Takeshi Aoki

    IPC分类号: G07F7/04

    摘要: A paper money supply unit has a backup plate which presses paper money input to a first input unit to a pickup roller, and a support plate which supports a paper money additionally input to a second input unit. When the paper money additionally input to the second input unit is moved to the first input unit and joined with the paper money, the support plate supports the paper money by a pressing force in the direction reverse to a pressing force by the operator.

    摘要翻译: 纸币供应单元具有将输入到第一输入单元的纸币按压到拾取辊的支撑板,以及支撑板,其支撑另外输入到第二输入单元的纸币。 当另外输入到第二输入单元的纸币被移动到第一输入单元并与纸币结合时,支撑板通过与操作者的按压力相反的方向的按压力来支撑纸币。

    Process for the production of semiconductor device
    14.
    发明授权
    Process for the production of semiconductor device 失效
    半导体器件生产工艺

    公开(公告)号:US06727182B2

    公开(公告)日:2004-04-27

    申请号:US09101308

    申请日:1998-10-15

    IPC分类号: H01L21302

    摘要: It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.

    摘要翻译: 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜(CF膜)的方法。 在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后,用例如BCl 3气体蚀刻TiN膜41。 此后,当用O 2等离子体照射晶片的表面时,对CF膜进行化学蚀刻,并且还蚀刻抗蚀剂膜42。 然而,由于TiN膜41用作掩模,因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层,但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。 作为掩模,可以用SiO 2等的绝缘膜代替膜。

    Speaker unit, speaker system, and speaker diaphragm manufacturing method
    15.
    发明授权
    Speaker unit, speaker system, and speaker diaphragm manufacturing method 失效
    扬声器单元,扬声器系统和扬声器隔膜制造方法

    公开(公告)号:US06543573B2

    公开(公告)日:2003-04-08

    申请号:US09730742

    申请日:2000-12-07

    IPC分类号: G10K1300

    CPC分类号: H04R7/00 H04R2307/029

    摘要: The present invention provides a speaker unit comprising a diaphragm of 0.5 to 10 mm thick aromatic polycarbonate with a density of 0.03 to 0.6 g/cm3, and a mechanism for driving the diaphragm. The aromatic polycarbonate used for the diaphragm is preferably derived from bisphenol with a viscosity average molecular weight of 25,000 to 70,000. The invention further provides a speaker system comprising such a speaker unit attached to a cabinet and a method for manufacturing the speaker diaphragm.

    摘要翻译: 本发明提供一种扬声器单元,其包括密度为0.03至0.6g / cm 3的0.5至10mm厚的芳族聚碳酸酯的隔膜和用于驱动隔膜的机构。 用于隔膜的芳族聚碳酸酯优选衍生自粘均分子量为25,000至70,000的双酚。 本发明还提供一种扬声器系统,其包括附接到机壳的扬声器单元和用于制造扬声器振膜的方法。

    Plasma treating device
    16.
    发明授权
    Plasma treating device 失效
    等离子体处理装置

    公开(公告)号:US06087614A

    公开(公告)日:2000-07-11

    申请号:US101668

    申请日:1998-10-29

    IPC分类号: H01L21/31 H01J37/32 B23K9/00

    摘要: The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.

    摘要翻译: PCT No.PCT / JP97 / 04225 Sec。 371日期:1998年10月29日第 102(e)日期1998年10月29日PCT 1997年11月20日PCT公布。 公开号WO98 / 22977 日期1998年5月28日本发明旨在产生在宽范围内具有均匀密度的等离子体,并且能够高度均匀地实现晶片表面(W)的等离子体处理。 透射微波的透射窗(23)保持在具有等离子体室(21)和成膜室(22)的真空容器(2)的上壁上,以及用于引导微波的波导 以TM模式传播到真空容器(2)中的2.45GHz接合到透射窗(23)的外表面。 波导管(4)具有矩形波导部分(41),用作TM转换器的圆柱形波导部分(42)和具有连接到透射窗(23)的外表面的出射端的锥形波导部分(43) 。 微波以TM模式传播到真空容器(2)中,并且在真空容器(2)中产生磁场。 如果锥形波导部分的出口端的内径(A)在130至160mm的范围内,则可以在等离子体室(21)中以均匀的密度形成等离子体,使得高度均匀的等离子体处理 可以实现例如8英寸直径的晶片(W)的表面。

    Composite material having polypropylene foam layer
    17.
    发明授权
    Composite material having polypropylene foam layer 失效
    具有聚丙烯泡沫层的复合材料

    公开(公告)号:US5928776A

    公开(公告)日:1999-07-27

    申请号:US967362

    申请日:1997-11-07

    摘要: A composite material having a skin layer, an intermediate, cushioning layer provided on one side of the skin layer, and a backing layer provided on the cushioning layer, wherein the backing layer is made of a non-crosslinked polypropylene resin foam and having a melting point MB in the range of 130-170.degree. C., wherein the cushioning layer is a crosslinked polypropylene resin foamed sheet having a gel fraction of 20-70% by weight. The cushioning layer has an endothermic peak in DSC curve at a peak temperature of PC which is in the range of 130-170.degree. C. and which is not smaller than (MB-15).degree. C. but not greater than (MB+10).degree. C. The endothermic peak has such an area at temperatures higher than MB that corresponds to a calorific value in the range of 3-30 J/g. The backing layer may be formed by expansion molding of expanded polypropylene particles within a mold cavity in which a laminate of the skin layer and the cushioning layer is placed in position.

    摘要翻译: 一种复合材料,其具有设置在表层的一侧上的表皮层,中间层,缓冲层和设置在缓冲层上的背衬层,其中该背衬层由非交联的聚丙烯树脂泡沫制成并具有熔融 点MB在130-170℃的范围内,其中缓冲层是凝胶分数为20-70重量%的交联聚丙烯树脂发泡片材。 缓冲层在PC峰值温度下在DSC曲线中具有吸热峰,温度范围为130-170℃,不低于(MB-15)℃,但不大于(MB + 10) )℃。吸热峰在高于MB的温度下具有这样的面积,其对应于3-30J / g范围内的热值。 背衬层可以通过将模制空腔内的发泡聚丙烯颗粒进行膨胀模塑而形成,其中表层和缓冲层的叠层被放置就位。

    Device for developing electrostatic latent image
    18.
    发明授权
    Device for developing electrostatic latent image 失效
    静电潜像显影装置

    公开(公告)号:US5758230A

    公开(公告)日:1998-05-26

    申请号:US740076

    申请日:1996-10-24

    IPC分类号: G03G15/08

    CPC分类号: G03G15/0817

    摘要: A device for developing an electrostatic latent image that includes a developing roller which is disposed in a developing housing, holds the developing agent on its peripheral surface, and conveys the developing agent that is held to a developing zone, a feeding roller for feeding the developing agent onto the peripheral surface of the developing roller, and seals that are disposed so as to be opposed to both ends of the developing roller from the downstream side of the developing zone to the upstream side of a developing agent-limiting zone. The device further includes seal lips that are formed in a protruding manner and which extend from one end on the side of the developing zone to an opposite end on the side of the developing agent-limiting zone. The feeding or replenishing roller is positioned so that its end surfaces are in contact with the inner end surfaces of the seals.

    摘要翻译: 一种用于显影静电潜像的装置,其包括设置在显影壳体中的显影辊,将显影剂保持在其外周表面上,并将保持在显影区域的显影剂输送,用于供给显影剂的显影剂 代理到显影辊的外周表面上,以及密封件,其被设置成与显影剂区域的两端相对,从显影区的下游侧到显影剂限制区的上游侧。 该装置还包括以突出方式形成并且从显影区一侧的一端延伸到显影剂限制区一侧的相对端的密封唇。 进给辊或补料辊定位成使其端面与密封件的内端表面接触。

    Process for the formation of a polycrystalline semiconductor film by
microwave plasma chemical vapor deposition method
    19.
    发明授权
    Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method 失效
    通过微波等离子体化学气相沉积法形成多晶半导体膜的工艺

    公开(公告)号:US5192717A

    公开(公告)日:1993-03-09

    申请号:US799900

    申请日:1991-12-02

    IPC分类号: H01L21/205

    摘要: A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.

    摘要翻译: 一种用于在绝缘基板上形成高质量多晶半导体膜的方法,其包括使用包括具有微波引入装置的等离子体产生室和通过格栅电极连接到所述等离子体产生室的成膜室的MW-PCVD装置, 所述成膜室包含位于由导电材料制成的衬底保持器上的所述绝缘衬底,其安装在其中,通过使成膜原料气体与通过所述微波引入装置在所述等离子体产生室中施加的微波能量接触而产生等离子体;以及 将所述等离子体引入所述成膜室,同时在所述栅电极和所述衬底保持器之间施加频率范围为20-500MHz的高频电压,从而在所述绝缘衬底上形成所述多晶半导体膜保持 在期望的温度。

    Apparatus for controlling air-fuel ratio of internal-combustion engine
    20.
    发明授权
    Apparatus for controlling air-fuel ratio of internal-combustion engine 有权
    用于控制内燃机空燃比的装置

    公开(公告)号:US08983754B2

    公开(公告)日:2015-03-17

    申请号:US13473593

    申请日:2012-05-17

    摘要: An apparatus for controlling an air-fuel ratio of an internal-combustion engine includes an air-fuel ratio detector, a fluctuation signal generating device, an air-fuel ratio fluctuation device, a 0.5th-order frequency component strength calculator, a fluctuation frequency component strength calculator, a reference component strength calculator, and an imbalance fault determining device. The reference component strength calculator is configured to calculate strength of a reference component in accordance with strength of a first frequency component and strength of a second frequency component. The imbalance fault determining device is configured to make a determination of an imbalance fault in which air-fuel ratios of a plurality of cylinders vary beyond a tolerance limit on a basis of a relative relationship between strength of the 0.5th-order frequency component and the strength of the reference component.

    摘要翻译: 用于控制内燃机的空燃比的装置包括空燃比检测器,变动信号发生装置,空燃比变动装置,0.5次频率分量强度计算器,波动频率 分量强度计算器,参考分量强度计算器和不平衡故障确定装置。 参考分量强度计算器被配置为根据第一频率分量的强度和第二频率分量的强度来计算参考分量的强度。 不平衡故障确定装置被配置为基于0.5次频率分量的强度与第5级频率分量的相对关系来确定多个气缸的空燃比变化超过公差极限的不平衡故障 参考组件的强度。