公开(公告)号：US08310611B2

公开(公告)日：2012-11-13

申请号：US12536066

申请日：2009-08-05

申请人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

发明人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L29/458 ,  H01L29/78618

摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

摘要翻译： 提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

公开(公告)号：US08049255B2

公开(公告)日：2011-11-01

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US20090218575A1

公开(公告)日：2009-09-03

申请号：US12379662

申请日：2009-02-26

申请人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.

摘要翻译： 提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源电极和半导体层之间的界面，漏电极和源电极形成为与每个 另一个在半导体层的顶表面之间形成有间隙。

公开(公告)号：US08058654B2

公开(公告)日：2011-11-15

申请号：US12379662

申请日：2009-02-26

申请人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.

摘要翻译： 提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源极和半导体层之间的界面，漏电极和源电极被形成为与每个 另一个在半导体层的顶表面之间形成有间隙。

公开(公告)号：US07952095B2

公开(公告)日：2011-05-31

申请号：US12208371

申请日：2008-09-11

申请人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

发明人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78678

摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.

摘要翻译： 在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个， 并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

公开(公告)号：US08222645B2

公开(公告)日：2012-07-17

申请号：US12702975

申请日：2010-02-09

申请人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

发明人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： G06F3/0412 ,  G02F1/1362 ,  G02F2001/13312 ,  G06F3/042 ,  H01L27/3227 ,  H01L27/323 ,  H01L27/3269

摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

摘要翻译： 提供了具有优异的光电转换效率的光传感器的显示装置。 在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到 半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

公开(公告)号：US08129724B2

公开(公告)日：2012-03-06

申请号：US12613598

申请日：2009-11-06

申请人： Takuo Kaitoh ,  Toshio Miyazawa

发明人： Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L29/78618 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66765

摘要： A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film transistors have a gate electrode, a source electrode and a drain electrode, a first semiconductor film, an insulation film, a second semiconductor film, and a third semiconductor film. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact, and the second semiconductor film is formed below the third semiconductor film and has a resistance higher than resistance of the third semiconductor film.

摘要翻译： 一种显示装置，包括透明基板和形成在透明基板上的多个薄膜晶体管，其中每个薄膜晶体管具有栅电极，源电极和漏电极，第一半导体膜，绝缘膜， 第二半导体膜和第三半导体膜。 第三半导体膜通过欧姆接触与源电极和漏电极连接，第二半导体膜形成在第三半导体膜的下方，并且具有比第三半导体膜的电阻高的电阻。

公开(公告)号：US20100230675A1

公开(公告)日：2010-09-16

申请号：US12702975

申请日：2010-02-09

申请人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

发明人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

IPC分类号： H01L33/16 ,  H01L33/02

CPC分类号： G06F3/0412 ,  G02F1/1362 ,  G02F2001/13312 ,  G06F3/042 ,  H01L27/3227 ,  H01L27/323 ,  H01L27/3269

摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

摘要翻译： 提供了具有优异的光电转换效率的光传感器的显示装置。 在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到 半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

公开(公告)号：US20090095957A1

公开(公告)日：2009-04-16

申请号：US12285820

申请日：2008-10-15

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/66765

摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.

摘要翻译： 提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。 一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅 层形成在第一非晶硅层之上。

公开(公告)号：US20080303030A1

公开(公告)日：2008-12-11

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。