公开(公告)号：US20100053126A1

公开(公告)日：2010-03-04

申请号：US12549456

申请日：2009-08-28

申请人： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

发明人： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

IPC分类号： G09G5/00 ,  H01J1/02 ,  H01J1/62

CPC分类号： H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

摘要： An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

摘要翻译： 电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等 至或小于100nm。

公开(公告)号：US20100060141A1

公开(公告)日：2010-03-11

申请号：US12553727

申请日：2009-09-03

申请人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

发明人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

摘要翻译： 在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地 获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。 电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。 布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。

公开(公告)号：US07513814B2

公开(公告)日：2009-04-07

申请号：US11159308

申请日：2005-06-23

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto ,  Hisashi Sakata

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto ,  Hisashi Sakata

IPC分类号： H01J9/00 ,  H01J9/24

CPC分类号： H01J9/027

摘要： An effective voltage V′ effectively applied to a gap 7 during an “activation step” is controlled to a desired value. In the “activation step”, a voltage is repeatedly applied between a first electroconductive film 4a and a second electroconductive film 4b while controlling voltages outputted from a voltage source 51 so that a value βeffect becomes a desired value.

摘要翻译： 在“激活步骤”期间有效地施加到间隙7的有效电压V'被控制到期望值。 在“激活步骤”中，在控制从电压源51输出的电压的同时，在第一导电膜4a和第二导电膜4b之间重复地施加电压，使得值效应成为期望值。

公开(公告)号：US20050236965A1

公开(公告)日：2005-10-27

申请号：US11106636

申请日：2005-04-15

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J1/316 ,  H01J9/02 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US07264530B2

公开(公告)日：2007-09-04

申请号：US11057723

申请日：2005-02-15

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto

IPC分类号： H01J9/02 ,  H01J9/00

CPC分类号： H01J29/863 ,  G09G3/22 ,  H01J31/127 ,  H01J2329/0489 ,  H01J2329/8615

摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

摘要翻译： 提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。 电子发射器件包括衬底，第一导体和第二导体。 基板由以下物质构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O，其中K 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。 第一导体和第二导体位于基板上。 在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。

公开(公告)号：US07230372B2

公开(公告)日：2007-06-12

申请号：US11106636

申请日：2005-04-15

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J19/06

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与基板接触形成在基板上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US06642649B1

公开(公告)日：2003-11-04

申请号：US09513133

申请日：2000-02-25

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

IPC分类号： H01J162

CPC分类号： H01J1/316 ,  H01J2201/30446 ,  H01J2201/3165

摘要： There are here disclosed an electron-emitting device, comprising a pair of conductors arranged on a substrate so as to face each other, and a pair of deposited films containing carbon as a main component which are connected to the pair of conductors respectively and which ate arranged putting a gap therebetween, wherein silver is contained in a ratio of 5 mol % to 10 mol % with respect to carbon in the deposited film, an electron source comprising the plurality of electron-emitting devices arranged on a substrate and a wire connected to the electron-emitting devices and an image-forming apparatus comprising the electron source and an image-forming member which performs image formation by the collision of electrons emitted from the electron source.

摘要翻译： 这里公开了一种电子发射器件，包括一对导体，其布置在基板上以彼此面对，以及一对沉积膜，其以碳为主要成分分别连接到所述一对导体，并且所述一对导体分别与所述一对导体 布置在其间的间隙，其中相对于沉积膜中的碳以5摩尔％至10摩尔％的比例含有银，包括布置在基板上的多个电子发射器件的电子源和连接到 电子发射器件和包括电子源和图像形成部件的图像形成装置，其通过与电子源发射的电子的碰撞进行图像形成。

公开(公告)号：US06633118B1

公开(公告)日：2003-10-14

申请号：US09513135

申请日：2000-02-25

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

IPC分类号： H01J162

CPC分类号： H01J1/316

摘要： An electron-emitting device includes, a pair of electroconductors disposed on a substrate so as to face each other, and a pair of deposit films connected to the pair of electroconductors, respectively, disposed with a gap therebetween and mainly containing carbon. Lead is contained in the deposit films in a rate of from 1 mol % to 5 mol %% with respect to carbon.

摘要翻译： 电子发射器件包括：一对电导体，其设置在基板上以彼此面对;以及一对沉积膜，分别与一对导电体连接，间隔开并主要包含碳。 铅以相对于碳为1摩尔％至5摩尔%%的比率包含在沉积膜中。

公开(公告)号：US07582002B2

公开(公告)日：2009-09-01

申请号：US11621658

申请日：2007-01-10

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J9/12 ,  H01J9/04

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US20070176532A1

公开(公告)日：2007-08-02

申请号：US11621658

申请日：2007-01-10

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J1/62

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。