-
11.发明授权公开(公告)号：US08031443B2
公开(公告)日：2011-10-04
申请号：US12071589
申请日：2008-02-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译： 一种磁电阻效应元件，包括：第一磁化层，其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。
-
12.发明授权公开(公告)号：US07897274B2
公开(公告)日：2011-03-01
申请号：US11685490
申请日：2007-03-13
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和磁化自由层中的至少一个基本上由式FeaCobNic（其中a + b + c = 100原子％，a＆nlE; 75原子％，b＆nlE; 75在 ％，c＆nlE; 63at％），或由具有体心立方晶体结构的合金形成。
-
公开(公告)号：US07897201B2
公开(公告)日：2011-03-01
申请号：US11703830
申请日：2007-02-08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/303 , H01F41/325
摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.
摘要翻译： 一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。 该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。
-
14.发明申请公开(公告)号：US20110019312A1
公开(公告)日：2011-01-27
申请号：US12879642
申请日：2010-09-10
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。
-
15.发明授权Apparatus for assisting write operation using high frequency magnetic field in disk drive 有权用于通过磁盘驱动器中的高频磁场辅助写入操作的装置公开(公告)号：US07791829B2
公开(公告)日：2010-09-07
申请号：US12196628
申请日：2008-08-22
申请人： Akihiko Takeo , Junichi Akiyama , Kenichiro Yamada , Hitoshi Iwasaki , Masayuki Takagishi , Tomomi Funayama , Masahiro Takashita , Mariko Shimizu
发明人： Akihiko Takeo , Junichi Akiyama , Kenichiro Yamada , Hitoshi Iwasaki , Masayuki Takagishi , Tomomi Funayama , Masahiro Takashita , Mariko Shimizu
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/02 , G11B5/1278 , G11B2005/0005 , G11B2005/0024
摘要： According to one embodiment, a disk drive having a spin torque oscillator and designed to perform high frequency assisted writing. The disk drive has a magnetic disk, a magnetic head, a coil, and a drive current controller. The drive current controller controls a drive current to supply to the spin torque oscillator. To record data magnetically in the disk, the drive current controller supplies to the spin torque oscillator the drive current that changes in synchronism with the polarity inversion of the recording current supplied to the coil, which excites the recording magnetic pole of the magnetic head.
摘要翻译： 根据一个实施例，一种具有自旋扭矩振荡器并被设计成执行高频辅助写入的盘驱动器。 磁盘驱动器具有磁盘，磁头，线圈和驱动电流控制器。 驱动电流控制器控制驱动电流供应到自旋扭矩振荡器。 为了将数据磁性地记录在盘中，驱动电流控制器向旋转转矩振荡器提供驱动电流，该驱动电流与提供给线圈的记录电流的极性反转同步地变化，这激励磁头的记录磁极。
-
公开(公告)号：US20100027161A1
公开(公告)日：2010-02-04
申请号：US12512237
申请日：2009-07-30
申请人： Masayuki Takagishi , Kenichiro Yamada , Hitoshi Iwasaki , Tomomi Funayama , Masahiro Takashita , Mariko Shimizu
发明人： Masayuki Takagishi , Kenichiro Yamada , Hitoshi Iwasaki , Tomomi Funayama , Masahiro Takashita , Mariko Shimizu
IPC分类号： G11B5/127
CPC分类号： G11B5/314 , G11B2005/001 , G11B2005/0024
摘要： A magnetic recording apparatus includes a magnetic recording head having a magnetic pole and a spin torque oscillator, the spin torque oscillator being placed adjacent to the magnetic pole and includes at least two magnetic layers of a first magnetic layer and a second magnetic layer, and a magnetic recording medium includes two magnetic layers of a recording layer and an antenna layer, the recording layer including a hard magnetic material, such that the antenna layer is formed closer to the magnetic recording head than the recording layer, in which the antenna layer has a resonance frequency fa lower than a resonance frequency fr of the recording layer, greater than a resonance frequency of the second magnetic layer, and the recording layer and the antenna layer are ferromagnetically coupled to each other.
摘要翻译： 磁记录装置包括具有磁极和自旋扭矩振荡器的磁记录头，该旋转扭矩振荡器被放置成与磁极相邻，并且包括至少两个第一磁性层和第二磁性层的磁性层，以及 磁记录介质包括记录层和天线层的两个磁性层，记录层包括硬磁性材料，使得天线层比记录层更靠近磁记录头，其中天线层具有 谐振频率fa低于记录层的谐振频率fr，大于第二磁性层的共振频率，并且记录层和天线层彼此铁磁耦合。
-
17.发明授权公开(公告)号：US07593195B2
公开(公告)日：2009-09-22
申请号：US11609557
申请日：2006-12-12
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
-
18.发明授权公开(公告)号：US07561383B2
公开(公告)日：2009-07-14
申请号：US12212162
申请日：2008-09-17
申请人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3143 , G11B5/39 , G11B5/3903 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , Y10T428/1114
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
-
19.发明授权公开(公告)号：US07511927B2
公开(公告)日：2009-03-31
申请号：US11282659
申请日：2005-11-21
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。
-
公开(公告)号：US20090080120A1
公开(公告)日：2009-03-26
申请号：US12232392
申请日：2008-09-16
申请人： Tomomi Funayama , Kenichiro Yamada , Masayuki Takagishi , Masahiro Takashita , Mariko Shimizu , Junichi Akiyama , Hitoshi Iwasaki
发明人： Tomomi Funayama , Kenichiro Yamada , Masayuki Takagishi , Masahiro Takashita , Mariko Shimizu , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/314 , G11B5/02 , G11B5/1278 , G11B2005/0005 , G11B2005/0024
摘要： It is made possible to provide a magnetic head that generates a sufficient high-frequency magnetic field for assisting recording operations, and a magnetic recording device that includes the magnetic head. A magnetic head includes: a recording magnetic pole; a return yoke magnetically coupled to the recording magnetic pole; and at least two spin torque oscillators provided near the recording magnetic pole.
摘要翻译： 可以提供一种产生用于辅助记录操作的足够的高频磁场的磁头和包括磁头的磁记录装置。 磁头包括：记录磁极; 磁耦合到记录磁极的返回磁轭; 以及设置在记录磁极附近的至少两个自旋扭矩振荡器。
-
-
-
-
-
-
-
-
-
搜索结果
275 条记录 (耗时 0.035 秒)
