公开(公告)号：US20070181850A1

公开(公告)日：2007-08-09

申请号：US11700027

申请日：2007-01-31

Applicant: Tetsuya Kamimura ,  Kenji Takenouchi

Inventor： Tetsuya Kamimura ,  Kenji Takenouchi

IPC: C09K13/00 ,  C09K13/02 ,  C09K13/06

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.

Abstract translation: 根据本发明的一个方面，提供了一种用于抛光半导体集成电路的阻挡层的抛光液，所述抛光液包括在其表面的一部分被铝覆盖的胶体二氧化硅和氧化剂，其中抛光 液体的pH为2〜7。

公开(公告)号：US20070181534A1

公开(公告)日：2007-08-09

申请号：US11698817

申请日：2007-01-29

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: B24D3/02 ,  C09K13/00 ,  B44C1/22 ,  H01L21/302 ,  C03C15/00

CPC classification number: H01L21/3212 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/7684 ,  H01L21/76843

Abstract: A barrier polishing liquid is provided that includes (a) a nonionic surfactant represented by Formula (I) below, (b) at least one type of organic acid selected from the group consisting of an aromatic sulfonic acid, an aromatic carboxylic acid, and a derivative thereof, (c) colloidal silica, and (d) benzotriazole or a derivative thereof. (In Formula (I), R1 to R6 independently denote a hydrogen atom or an alkyl group having 1 to 10 carbons, X and Y independently denote an ethyleneoxy group or a propyleneoxy group, and m and n independently denote an integer of 0 to 20.) There is also provided a chemical mechanical polishing method that includes supplying the barrier polishing liquid to a polishing pad on a polishing platen at a flow rate per unit area of a semiconductor substrate per unit time of 0.035 to 0.25 mL/(min·cm2), and polishing by making the polishing pad and a surface to be polished move relative to each other while they are in a contacted state.

Abstract translation: 提供了一种阻挡抛光液，其包括（a）由下式（I）表示的非离子表面活性剂，（b）至少一种选自芳族磺酸，芳族羧酸和 衍生物，（c）胶体二氧化硅，（d）苯并三唑或其衍生物。 （式（I）中，R 1至R 6独立地表示氢原子或具有1至10个碳的烷基，X和Y独立地表示亚乙基氧基或 丙烯氧基，m和n独立地表示0至20的整数。）还提供了一种化学机械抛光方法，其包括以每单位面积的流量将抛光垫供给到研磨台板上的抛光垫 每单位时间的半导体衬底为0.035至0.25mL /（min·cm 2），并且通过制造抛光垫和待抛光表面进行抛光，同时它们处于接触状态 州。

公开(公告)号：US08715524B2

公开(公告)日：2014-05-06

申请号：US12036686

申请日：2008-02-25

Applicant: Tetsuya Kamimura ,  Toshiyuki Saie ,  Masaru Yoshikawa

Inventor： Tetsuya Kamimura ,  Toshiyuki Saie ,  Masaru Yoshikawa

IPC: C09K13/00 ,  H01L21/302

CPC classification number: C23F3/00 ,  C09G1/02 ,  H01L21/3212

Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.

Abstract translation: 本发明提供了一种用于抛光半导体集成电路的阻挡层的抛光液，该抛光液包括：二季铵阳离子; 腐蚀抑制剂; 和胶体二氧化硅，其中抛光液的pH在2.5至5.0的范围内。 根据本发明，可以提供能够实现优异的阻挡层研磨速度的抛光液，以及抑制由于固体磨粒的凝聚而引起的刮擦的发生。

公开(公告)号：US08551928B2

公开(公告)日：2013-10-08

申请号：US13281885

申请日：2011-10-26

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: C11D3/10 ,  C11D3/00

CPC classification number: C11D3/0052 ,  C11D3/0094 ,  C11D3/042 ,  C11D3/046 ,  C11D3/048 ,  C11D3/10 ,  C11D3/2075 ,  C11D3/2096 ,  C11D3/3942 ,  C11D7/08 ,  C11D7/10 ,  C11D7/105 ,  C11D7/12 ,  C11D7/265 ,  C11D7/267 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31133

Abstract: A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent.

Abstract translation: 一种用于应用于包含具有碳酸亚烷基酯和碳酸盐的发泡剂的半导体衬底的多剂型清洁套件，具有酸性化合物的发泡助剂和氧化剂; 与氧化剂组合时，至少将发泡剂与发泡助剂混合，用于清洁半导体衬底。

公开(公告)号：US08419970B2

公开(公告)日：2013-04-16

申请号：US12458220

申请日：2009-07-06

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053

Abstract: A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Abstract translation: 一种用于在用于制造半导体集成电路的平坦化工艺中对要抛光的物体进行化学机械抛光的氮化硅抛光液体，所述待抛光体包括至少包含氮化硅的第一层和包含至少一个硅的第二层 - 包括选自多晶硅，改性多晶硅，氧化硅，碳化硅和碳氧化硅的材料，氮化硅抛光液的pH为2.5至5.0，并且包括（a）胶态二氧化硅，（b）有机 酸在其分子结构中具有至少一个磺酸基或膦酸基，并且用作氮化硅的抛光促进剂，和（c）水。

公开(公告)号：US08372304B2

公开(公告)日：2013-02-12

申请号：US12457373

申请日：2009-06-09

Applicant: Tooru Yamada ,  Tetsuya Kamimura

Inventor： Tooru Yamada ,  Tetsuya Kamimura

IPC: C09K13/00 ,  H01L21/44

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

公开(公告)号：US08338303B2

公开(公告)日：2012-12-25

申请号：US12639015

申请日：2009-12-16

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.

Abstract translation: 用于半导体器件的化学机械抛光的抛光液包括（a）具有一个或多个羧基的羧酸化合物，（b）当用于抛光时具有-10mV至-35mV的ζ电位的胶体二氧化硅颗粒 液体，（c）苯并三唑衍生物，（d）阴离子表面活性剂和（e）氧化剂，所述研磨液的pH为5.0〜8.0。

公开(公告)号：US20100009538A1

公开(公告)日：2010-01-14

申请号：US12458220

申请日：2009-07-06

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053

Abstract: A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Abstract translation: 一种用于在用于制造半导体集成电路的平坦化工艺中对要抛光的物体进行化学机械抛光的氮化硅抛光液体，所述待抛光体包括至少包含氮化硅的第一层和包含至少一个硅的第二层 - 包括选自多晶硅，改性多晶硅，氧化硅，碳化硅和碳氧化硅的材料，氮化硅抛光液的pH为2.5至5.0，并且包括（a）胶态二氧化硅，（b）有机 酸在其分子结构中具有至少一个磺酸基或膦酸基，并且用作氮化硅的抛光促进剂，和（c）水。

公开(公告)号：US20090311864A1

公开(公告)日：2009-12-17

申请号：US12457373

申请日：2009-06-09

Applicant: Tooru Yamada ,  Tetsuya Kamimura

Inventor： Tooru Yamada ,  Tetsuya Kamimura

IPC: H01L21/463 ,  H01L21/465 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

Abstract translation: 在半导体集成电路中用于阻挡层和层间绝缘膜的化学机械抛光中的研磨浆料包括研磨剂，氧化剂，防腐蚀剂，酸，表面活性剂和包合物。 抛光浆料的pH值小于5.所得的抛光浆料含有用于抛光由金属阻隔材料制成的阻挡层的阻挡层CMP的固体磨料，具有优异的储存稳定性，在各种膜中达到良好的抛光速率 抛光如阻挡层，并且能够独立地控制相对于待研磨的各种膜的抛光速率，同时进一步抑制磨料颗粒的团聚。

公开(公告)号：US20090298290A1

公开(公告)日：2009-12-03

申请号：US12453970

申请日：2009-05-28

Applicant: Tetsuya Kamimura

Inventor： Tetsuya Kamimura

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055

Abstract: A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.

Abstract translation: 一种抛光液，其用于在半导体集成电路的制造的平坦化工艺中对被研磨体进行化学机械抛光，所述抛光体至少包括含有多晶硅或改性多晶硅的第一层，以及含有 选自氧化硅，氮化硅，碳化硅，碳氮化硅，碳氧化硅和氮氧化硅中的至少一种，所述抛光液的pH为1.5〜7.0，包括（1）胶体二氧化硅颗粒，（2） 有机酸和（3）阴离子表面活性剂，并且能够相对于第一层选择性地抛光第二层。