公开(公告)号：US11296016B2

公开(公告)日：2022-04-05

申请号：US15808537

申请日：2017-11-09

Applicant: Texas Instruments Incorporated

Inventor： Robert Allan Neidorff ,  Benjamin Cook ,  Steven Alfred Kummerl ,  Barry Jon Male ,  Peter Smeys

IPC: H01L23/495 ,  H01L23/485 ,  H01L23/31 ,  B81C1/00

Abstract: Semiconductor devices and methods and apparatus to produce such semiconductor devices are disclosed. An integrated circuit package includes a lead frame including a die attach pad and a plurality of leads; a die including a MEMs region defined by a plurality of trenches, the die electrically connected to the plurality of leads; and a mold compound covering portions of the die, the mold compound defining a cavity between a surface of the die and a surface of the mold compound, wherein the mold compound defines a vent.

公开(公告)号：US20220059439A1

公开(公告)日：2022-02-24

申请号：US17000146

申请日：2020-08-21

Applicant: Texas Instruments Incorporated

Inventor： Robert Allan Neidorff ,  Benjamin Cook ,  Stefan Herzer

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00

Abstract: A method includes performing a non-screen printing process that deposits solder on a lead frame or on conductive features of a semiconductor die or wafer, or on or in a conductive via of a laminate structure. The method further comprises engaging the semiconductor die to the lead frame, performing a thermal process that reflows the solder, performing a molding process that forms a package structure which encloses the semiconductor die and a portion of the lead frame, and separating a packaged electronic device from a remaining portion of the lead frame.

公开(公告)号：US20210050782A1

公开(公告)日：2021-02-18

申请号：US16860511

申请日：2020-04-28

Applicant: Texas Instruments Incorporated

Inventor： Saurav Bandyopadhyay ,  Thomas Matthew LaBella ,  Huy Le Nhat Nguyen ,  Michael G. Amaro ,  Robert Allan Neidorff

IPC: H02M3/158 ,  H03K17/082 ,  G06F1/26

Abstract: A switch-mode power supply circuit includes a low-side switching transistor, a high-side switching transistor, a low-side current sensing circuit, and a gate driver circuit. The low-side current sensing circuit is coupled to the low-side switching transistor and is configured to sense a current flowing through the low-side switching transistor. The gate driver circuit is coupled to the low-side current sensing circuit and the high-side switching transistor. The gate driver circuit is configured to generate a signal having a first drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being less than a threshold current, and to generate a signal having a second drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being greater than the threshold current. The first drive strength is greater than the second drive strength.

公开(公告)号：US20240369598A1

公开(公告)日：2024-11-07

申请号：US18773506

申请日：2024-07-15

Applicant: Texas Instruments Incorporated

Inventor： Robert Allan Neidorff ,  Sreenivasan K. Koduri

IPC: G01R1/067 ,  G01R31/28 ,  H01L23/495

Abstract: A semiconductor device includes a leadframe having a first level and a second level. The semiconductor device includes a semiconductor die and a conductive alloy. The conductive alloy is between the semiconductor die and the first level of the lead frame. The conductive alloy is configured to be a current sense element. The semiconductor device further includes a first conductive post coupling the semiconductor die to the conductive alloy, a second conductive post coupling the semiconductor die to the conductive alloy, and a third conductive post coupling the semiconductor die to the second level of the lead frame. The second conductive post is configured to be a first sense terminal. The third conductive post is configured to be a second sense terminal.

公开(公告)号：US12066459B2

公开(公告)日：2024-08-20

申请号：US17364477

申请日：2021-06-30

Applicant: Texas Instruments Incorporated

Inventor： Robert Allan Neidorff ,  Sreenivasan K Koduri

IPC: G01R1/067 ,  G01R31/28 ,  H01L23/495

CPC classification number: G01R1/06711 ,  G01R31/2851 ,  H01L23/4952

Abstract: A semiconductor device includes a leadframe having a first level and a second level. The semiconductor device includes a semiconductor die and a conductive alloy. The conductive alloy is between the semiconductor die and the first level of the lead frame. The conductive alloy is configured to be a current sense element. The semiconductor device further includes a first conductive post coupling the semiconductor die to the conductive alloy, a second conductive post coupling the semiconductor die to the conductive alloy, and a third conductive post coupling the semiconductor die to the second level of the lead frame. The second conductive post is configured to be a first sense terminal. The third conductive post is configured to be a second sense terminal.

公开(公告)号：US11940479B2

公开(公告)日：2024-03-26

申请号：US17362706

申请日：2021-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Robert Allan Neidorff ,  Henry Litzmann Edwards

IPC: G01R31/50 ,  G01R19/00 ,  G01R19/165 ,  G01R31/26 ,  G01R31/30

CPC classification number: G01R31/2621 ,  G01R19/0092 ,  G01R19/165 ,  G01R31/3008 ,  G01R31/50

Abstract: A system for determining the leakage current of a field effect transistor over temperature includes a metal oxide semiconductor field effect transistor (MOSFET) having first and second current terminals and a control terminal, wherein the first current terminal is coupled to a current measurement device. A switch is coupled to the control terminal and to a voltage source. The switch is configured to apply a voltage between a control terminal and a current terminal of the (MOSFET) responsive to a first signal, and apply approximately zero volts to the control terminal of the (MOSFET) responsive to a second signal.

公开(公告)号：US11552565B2

公开(公告)日：2023-01-10

申请号：US16860511

申请日：2020-04-28

Applicant: Texas Instruments Incorporated

Inventor： Saurav Bandyopadhyay ,  Thomas Matthew LaBella ,  Huy Le Nhat Nguyen ,  Michael G. Amaro ,  Robert Allan Neidorff

IPC: H02M3/158 ,  G06F1/26 ,  H03K17/082 ,  H02M1/00

Abstract: A switch-mode power supply circuit includes a low-side switching transistor, a high-side switching transistor, a low-side current sensing circuit, and a gate driver circuit. The low-side current sensing circuit is coupled to the low-side switching transistor and is configured to sense a current flowing through the low-side switching transistor. The gate driver circuit is coupled to the low-side current sensing circuit and the high-side switching transistor. The gate driver circuit is configured to generate a signal having a first drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being less than a threshold current, and to generate a signal having a second drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being greater than the threshold current. The first drive strength is greater than the second drive strength.

公开(公告)号：US20200041356A1

公开(公告)日：2020-02-06

申请号：US16050949

申请日：2018-07-31

Applicant: Texas Instruments Incorporated

Inventor： Robert Allan Neidorff ,  Saurav Bandyopadhyay ,  Thomas Matthew LaBella

IPC: G01K7/01 ,  G01K13/00 ,  H03K17/14

Abstract: Methods and apparatus to provide an adaptive gate driver for switching devices are disclosed. An example apparatus includes an electrical switch to drive an electrical system; a condition characterizer to select a drive strength based on a first system parameter corresponding to the electrical system, the first system parameter including at least one of an input voltage corresponding to the electrical switch, an output current corresponding to the electrical switch, or a process variation of the electrical switch; and a driver to generate an output having a current corresponding to the selected drive strength.