Structure for automatic in-situ replacement of a part of an electrostatic chuck

    公开(公告)号:US11380573B2

    公开(公告)日:2022-07-05

    申请号:US16892328

    申请日:2020-06-04

    Abstract: A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.

    SUBSTRATE PROCESSING SYSTEM
    13.
    发明申请

    公开(公告)号:US20220148858A1

    公开(公告)日:2022-05-12

    申请号:US17522609

    申请日:2021-11-09

    Abstract: A substrate processing system is disclosed. The system comprises a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port and configured to perform substrate processing; a connecting member that allows the first substrate transfer port and the second substrate transfer port to communicate with each other; a heat shield portion disposed along the second transfer port in cross-sectional view and configured to thermally block the first chamber and the second chamber from each other; and a protective member disposed between the heat shield portion and the second transfer port and configured to prevent deterioration of the heat shield portion during substrate processing in the second chamber.

    Plasma processing apparatus
    14.
    发明授权

    公开(公告)号:US11011347B2

    公开(公告)日:2021-05-18

    申请号:US16012959

    申请日:2018-06-20

    Abstract: A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.

    Bonding method, mounting table and substrate processing apparatus
    16.
    发明授权
    Bonding method, mounting table and substrate processing apparatus 有权
    接合方法,安装台和基板处理装置

    公开(公告)号:US09520814B2

    公开(公告)日:2016-12-13

    申请号:US14158916

    申请日:2014-01-20

    Inventor: Daisuke Hayashi

    CPC classification number: H02N13/00

    Abstract: A distance between the surface of the base member and the electrostatic chuck having the heater pattern formed on a bottom surface thereof can be uniformized. A bonding method of bonding an electrostatic chuck and a base member to each other includes forming a filling member 30 by covering irregularities of a heater pattern 9a formed on a bottom surface 61 of the electrostatic chuck 9 facing the base member 10; grinding a base member contact surface 62 of the filling member 30 facing the base member 10; and bonding the ground base member contact surface 62 of the filling member 30 to the base member 10 with an adhesive layer 31 provided therebetween.

    Abstract translation: 基底部件的表面与形成在其底面上的具有加热器图案的静电卡盘之间的距离可以均匀化。 将静电卡盘和基体构件彼此接合的接合方法包括:通过覆盖形成在面向基底构件10的静电卡盘9的底面61上的加热器图案9a的凹凸来形成填充构件30; 研磨填充构件30的与基底构件10相对的基部构件接触表面62; 并且将填充构件30的接地基部构件接触面62与设置在其间的粘合剂层31接合到基底构件10。

    Transfer device, transfer system, and end effector

    公开(公告)号:US12191188B2

    公开(公告)日:2025-01-07

    申请号:US17402640

    申请日:2021-08-16

    Abstract: A transfer device for simultaneously or separately transferring a wafer and a consumable part having a circular shape is disclosed. The consumable part is disposed in a wafer processing module, and the outer diameter of the consumable part is larger than the outer diameter of the wafer. The transfer device comprises an end effector configured to place the wafer and the consumable part thereon simultaneously or separately, an arm configured to move the end effector, and a controller configured to control the arm, to place the consumable part on the end effector such that the center of gravity of the consumable part coincides with a first position when transferring the consumable part, and to place the wafer on the end effector such that the center of gravity of the wafer coincides with a second position between the first position and front ends of the end effector when transferring the wafer.

    Stage and plasma processing apparatus

    公开(公告)号:US11380526B2

    公开(公告)日:2022-07-05

    申请号:US16644632

    申请日:2019-06-03

    Abstract: A stage on which a substrate is disposed includes: a base embedded with an adsorption electrode therein; a focus ring provided above the adsorption electrode and adsorbed and held on the base; and a deposit control ring provided radially inside the focus ring on the base. A gap is formed between the focus ring and the deposit control ring in a radial direction to separate the focus ring and the deposit control ring.

    Stage and plasma processing apparatus

    公开(公告)号:US11232967B2

    公开(公告)日:2022-01-25

    申请号:US16402381

    申请日:2019-05-03

    Inventor: Daisuke Hayashi

    Abstract: Disclosed is a stage including: an electrostatic chuck having a substrate placement surface on which a substrate is placed; and an electrostatic chuck placement plate on which the electrostatic chuck is placed. The electrostatic chuck and the electrostatic chuck placement plate are fastened by a plurality of first fasteners from a side of the electrostatic chuck placement plate, and the stage is fastened to a support provided on an opposite side of the electrostatic chuck of the electrostatic chuck placement plate by a plurality of second fasteners on a radially outer side of the placement surface.

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