Stage and electrode member
    2.
    发明授权

    公开(公告)号:US11421323B2

    公开(公告)日:2022-08-23

    申请号:US16976544

    申请日:2019-07-08

    Abstract: A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

    STAGE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210066049A1

    公开(公告)日:2021-03-04

    申请号:US16644632

    申请日:2019-06-03

    Abstract: A stage on which a substrate is disposed includes: a base embedded with an adsorption electrode therein; a focus ring provided above the adsorption electrode and adsorbed and held on the base; and a deposit control ring provided radially inside the focus ring on the base. A gap is formed between the focus ring and the deposit control ring in a radial direction to separate the focus ring and the deposit control ring.

    Plasma etching apparatus
    4.
    发明授权

    公开(公告)号:US10153138B2

    公开(公告)日:2018-12-11

    申请号:US14019023

    申请日:2013-09-05

    Abstract: Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

    Substrate processing apparatus
    5.
    发明授权

    公开(公告)号:US10026596B2

    公开(公告)日:2018-07-17

    申请号:US14462657

    申请日:2014-08-19

    Inventor: Daisuke Hayashi

    Abstract: A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode.

    Substrate support and plasma processing apparatus

    公开(公告)号:US11387080B2

    公开(公告)日:2022-07-12

    申请号:US17032930

    申请日:2020-09-25

    Inventor: Daisuke Hayashi

    Abstract: A substrate support is provided. The substrate support includes a main body having a substrate supporting region and an annular region surrounding the substrate supporting region. The substrate support further includes a first ring disposed on the annular region and having a through-hole, a second ring disposed on the first ring and having an inner peripheral surface facing an end surface of a substrate on the substrate supporting region. The substrate support further includes a lift pin including a lower rod and an upper rod, wherein the lower rod has an upper end surface to be in contact with the first ring, and the upper rod extends upward from the upper end surface of the lower rod to be in contact with the second ring through the through-hole of the first ring and has a length greater than a length of the through-hole.

    Stage and plasma processing apparatus

    公开(公告)号:US11289356B2

    公开(公告)日:2022-03-29

    申请号:US16402381

    申请日:2019-05-03

    Inventor: Daisuke Hayashi

    Abstract: Disclosed is a stage including: an electrostatic chuck having a substrate placement surface on which a substrate is placed; and an electrostatic chuck placement plate on which the electrostatic chuck is placed. The electrostatic chuck and the electrostatic chuck placement plate are fastened by a plurality of first fasteners from a side of the electrostatic chuck placement plate, and the stage is fastened to a support provided on an opposite side of the electrostatic chuck of the electrostatic chuck placement plate by a plurality of second fasteners on a radially outer side of the placement surface.

    Mounting table and plasma processing apparatus

    公开(公告)号:US10340174B2

    公开(公告)日:2019-07-02

    申请号:US14160735

    申请日:2014-01-22

    Abstract: A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.

    Cooling block forming electrode
    10.
    发明授权
    Cooling block forming electrode 有权
    冷却块形成电极

    公开(公告)号:US09210791B2

    公开(公告)日:2015-12-08

    申请号:US13667226

    申请日:2012-11-02

    CPC classification number: H05H1/46 H01J37/32009 H01J37/32724

    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

    Abstract translation: 本发明是一种冷却块,其形成用于产生用于等离子体处理的等离子体的电极,并且包括用于冷却液体的通道,所述冷却块包括:分别由铝制成的第一基材和第二基材, 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层,所述层通过在第一和第二基底材料之间插入锌而形成,并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

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