公开(公告)号：US20240429031A1

公开(公告)日：2024-12-26

申请号：US18824128

申请日：2024-09-04

Applicant: Tokyo Electron Limited ,  Nagoya Institute of Technology

Inventor： Masanori SATO ,  Atsushi KAWABATA ,  Ryusei KASHIMURA ,  Jun HIROSE ,  Kunihiko KATO ,  Takashi SHIRAI

IPC: H01J37/32 ,  H01J9/00

Abstract: An alumina ceramic member contains an alumina polycrystal with an average grain size less than or equal to 100 μm. The alumina ceramic member is doped with yttrium in a state other than a crystalline state of an oxide, a crystalline state of a garnet structure, or an amorphous state, at grain boundaries of the alumina polycrystal.

公开(公告)号：US20220130651A1

公开(公告)日：2022-04-28

申请号：US17507956

申请日：2021-10-22

Applicant: Tokyo Electron Limited

Inventor： Norihiko AMIKURA ,  Makoto SAEGUSA ,  Jun HIROSE

IPC: H01J37/32

Abstract: There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

公开(公告)号：US20220122818A1

公开(公告)日：2022-04-21

申请号：US17504578

申请日：2021-10-19

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

公开(公告)号：US20210005427A1

公开(公告)日：2021-01-07

申请号：US16977856

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Masayuki SAWATAISHI ,  Jun HIROSE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.

公开(公告)号：US20190063987A1

公开(公告)日：2019-02-28

申请号：US16117630

申请日：2018-08-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun HIROSE ,  Norihiko AMIKURA ,  Risako MIYOSHI ,  Shinobu ONODERA

IPC: G01F25/00 ,  G01F3/22

Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

公开(公告)号：US20240371609A1

公开(公告)日：2024-11-07

申请号：US18773597

申请日：2024-07-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shin MATSUURA ,  Jun HIROSE

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

公开(公告)号：US20240339306A1

公开(公告)日：2024-10-10

申请号：US18746251

申请日：2024-06-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/3244 ,  H01J37/32899

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

公开(公告)号：US20240242976A1

公开(公告)日：2024-07-18

申请号：US18279712

申请日：2022-03-04

Applicant: Tokyo Electron Limited ,  FUJIKIN INCORPORATED

Inventor： Jun HIROSE ,  Atsushi SAWACHI ,  Takahiro MATSUDA ,  Kazunari WATANABE ,  Kohei SHIGYOU ,  Taiki HOSHIKO

IPC: H01L21/67

CPC classification number: H01L21/67017

Abstract: A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

公开(公告)号：US20240096608A1

公开(公告)日：2024-03-21

申请号：US18515220

申请日：2023-11-20

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32 ,  G01N21/68

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J2237/2445 ,  H01J2237/24585 ,  H01L21/67253

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

公开(公告)号：US20210407768A1

公开(公告)日：2021-12-30

申请号：US17356997

申请日：2021-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.