Antenna and plasma processing apparatus

    公开(公告)号:US10825658B2

    公开(公告)日:2020-11-03

    申请号:US16014628

    申请日:2018-06-21

    Abstract: In an antenna including a dielectric window and a slot plate provided on one surface of the dielectric window, in a case where a reference position g is a center position in a width direction of each slot S and a center position in a length direction in the slot plate, the reference position g of each slot is located on a virtual circle centered on a center of gravity G0, and line segments connecting the reference positions g of the slots S and virtual point G1 to which the slots belong are located radially from a virtual point G1, angles (β1 to β4) between adjacent line segments are equal to each other, and angles (θ1 to θ4) formed by the length directions of the slots S at the reference positions g and the line segments to which the slots belong are equal to each other.

    Plasma processing apparatus, plasma processing method and high frequency generator
    13.
    发明授权
    Plasma processing apparatus, plasma processing method and high frequency generator 有权
    等离子体处理装置,等离子体处理方法和高频发生器

    公开(公告)号:US09418822B2

    公开(公告)日:2016-08-16

    申请号:US14177421

    申请日:2014-02-11

    Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

    Abstract translation: 等离子体处理装置包括:等离子体产生装置,其被配置为通过使用由包括被配置为产生高频波的磁控管42的微波发生器41产生的高频波在处理容器内产生等离子体; 被配置为分别测量传播到负载侧的行波的功率和从负载侧反射的反射波的功率的检测器54a和54b; 以及电压控制电路53a,其被配置为通过电源43控制提供给磁控管42的电压。此外,电压控制电路53a包括负载控制装置,其被配置为向磁控管42提供与计算出的功率相对应的电压 通过将由检测器54b测量的反射波的功率计算出的功率与由检测器54a测量的行波的功率相加。

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