公开(公告)号：US20140179028A1

公开(公告)日：2014-06-26

申请号：US14136388

申请日：2013-12-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/66 ,  C23C16/511

CPC classification number: H01J37/32192 ,  H01J21/22 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/22

Abstract: Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

Abstract translation: 公开了一种具有等离子体产生机构的等离子体掺杂装置。 等离子体产生机构包括产生用于等离子体激发的微波的微波发生器，将由微波发生器产生的微波传输到处理容器中的电介质窗和形成有多个槽的径向线缝隙天线。 径向线槽天线将微波辐射到电介质窗口。 控制单元控制等离子体掺杂装置，使得在将基板放置在保持单元上的状态下，通过气体供给单元将用于等离子体激发的掺杂气体和气体供应到处理容器中，然后通过 等离子体产生机构，以在衬底上进行掺杂，使得注入到衬底中的掺杂剂的浓度小于1×1013原子/ cm 2。

公开(公告)号：US20140094024A1

公开(公告)日：2014-04-03

申请号：US14039761

申请日：2013-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro OKA ,  Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Masahiro HORIGOME

IPC: H01L21/22 ,  H01L21/67

CPC classification number: H01L21/22 ,  H01L21/2236 ,  H01L21/67011 ,  H01L21/67109 ,  H01L21/6831 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process.

Abstract translation: 公开了一种等离子体掺杂装置，其包括处理室，基板保持单元，等离子体产生机构，压力控制机构，偏置供电机构和控制单元。 控制单元将处理室内的压力控制为第一压力，并且控制向保持单元供应的偏置功率为第一等离子体处理的第一偏置功率。 控制单元还将处理室内的压力控制为高于第一压力的第二压力，并且将提供给保持单元的偏置功率控制为低于第一偏置功率的第二偏置功率 用于第二等离子体工艺。