公开(公告)号：US10777425B2

公开(公告)日：2020-09-15

申请号：US16229036

申请日：2018-12-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US20200058512A1

公开(公告)日：2020-02-20

申请号：US16661014

申请日：2019-10-23

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/3065 ,  H01L21/04 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/033

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

公开(公告)号：US10319613B2

公开(公告)日：2019-06-11

申请号：US15837195

申请日：2017-12-11

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/67 ,  H01L21/311

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

公开(公告)号：US12112954B2

公开(公告)日：2024-10-08

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju Tomura ,  Tomohiko Niizeki ,  Takayuki Katsunuma ,  Hironari Sasagawa ,  Yuta Nakane ,  Shinya Ishikawa ,  Kenta Ono ,  Sho Kumakura ,  Yusuke Takino ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/32139

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US11637025B2

公开(公告)日：2023-04-25

申请号：US16794391

申请日：2020-02-19

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: C23C16/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32 ,  H01J37/00

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

公开(公告)号：US11459655B2

公开(公告)日：2022-10-04

申请号：US16522890

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20220005700A1

公开(公告)日：2022-01-06

申请号：US17474427

申请日：2021-09-14

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/04 ,  H01L21/033 ,  H01L21/683 ,  H01L37/00

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

公开(公告)号：US11145518B2

公开(公告)日：2021-10-12

申请号：US16661014

申请日：2019-10-23

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/04 ,  H01L21/033 ,  H01L21/683 ,  H01L37/00 ,  H01L29/16

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

公开(公告)号：US20200273699A1

公开(公告)日：2020-08-27

申请号：US15930637

申请日：2020-05-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/66

Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

公开(公告)号：US20200185238A1

公开(公告)日：2020-06-11

申请号：US16794391

申请日：2020-02-19

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/00

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.