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公开(公告)号：US20240153749A1
公开(公告)日：2024-05-09
申请号：US18415667
申请日：2024-01-18
IPC分类号： H01J37/32 , H01L21/683 , H01L21/687
CPC分类号： H01J37/32715 , H01J37/32091 , H01J37/32211 , H01J37/32541 , H01J37/3255 , H01J37/32568 , H01J37/32642 , H01L21/6831 , H01L21/6833 , H01L21/68721
摘要： A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.
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公开(公告)号：US20210327688A1
公开(公告)日：2021-10-21
申请号：US17272945
申请日：2019-08-26
发明人： Yasuharu SASAKI , Yohei UCHIDA
IPC分类号： H01J37/32
摘要： A mounting base for placing a substrate to be subjected to a predetermined processing is provided. The mounting base includes an electrostatic chuck for electrostatically attracting and holding the substrate, a first edge ring that is disposed around the substrate and is transferrable, a second edge ring fixed around the first edge ring, a lifter pin for raising and lowering the first edge ring, a first electrode disposed in a position facing the first edge ring in the electrostatic chuck to electrostatically attract and hold the first edge ring; and a second electrode disposed in a position facing the second edge ring in the electrostatic chuck to electrostatically attract and hold the second edge ring.
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公开(公告)号：US20210233794A1
公开(公告)日：2021-07-29
申请号：US17232226
申请日：2021-04-16
IPC分类号： H01L21/683 , H01J37/32 , H01L21/687 , H01L21/3065
摘要： A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
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公开(公告)号：US20190074209A1
公开(公告)日：2019-03-07
申请号：US16116193
申请日：2018-08-29
发明人： Yasuharu SASAKI , Katsunori HIRAI , Junichi SASAKI
IPC分类号： H01L21/687 , H01L21/683 , H01J37/32
摘要： A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.
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公开(公告)号：US20160189994A1
公开(公告)日：2016-06-30
申请号：US14975377
申请日：2015-12-18
发明人： Yasuharu SASAKI , Taketoshi TOMIOKA , Hiroki KISHI , Jisoo SUH
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/67109 , H02N13/00
摘要： An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
摘要翻译： 静电吸附方法使用包括静电卡盘，聚焦环，供给单元的基板处理装置，该供给单元构造成将热传导介质供给到形成在聚焦环和静电卡盘之间的空间，以及多个电极， 在对应于聚焦环的静电卡盘中。 静电吸附方法包括：通过供给单元将传热介质供给到等离子体处理时间的空间，等离子体处理期间产生用于处理基板的等离子体，并且向多个电极施加不同的电压以吸引并保持聚焦环 静电卡盘等离子体处理期间以外的期间。
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16.发明公开公开(公告)号：US20240347322A1
公开(公告)日：2024-10-17
申请号：US18751991
申请日：2024-06-24
IPC分类号： H01J37/32 , H01L21/683 , H01L21/687
CPC分类号： H01J37/32642 , H01J37/32715 , H01L21/6833 , H01L21/68735 , H01L21/68757
摘要： An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.
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17.发明公开公开(公告)号：US20230298865A1
公开(公告)日：2023-09-21
申请号：US18137355
申请日：2023-04-20
发明人： Masashi IKEGAMI , Yasuharu SASAKI
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32642 , H01L21/6831
摘要： A substrate support assembly includes a supporting table and one or more piezoelectric elements disposed between the supporting table and a focus ring. The supporting table has an upper surface, and the upper surface includes a first region on which a substrate is mounted and a second region on which the focus ring is disposed, the second region extending in a circumferential direction at an outer side of the first region. The one or more piezoelectric elements are disposed between the focus ring and the second region to be in direct or indirect contact with the focus ring and the second region. Changes in thicknesses of the one or more piezoelectric elements cause a change in a vertical position of the focus, and the thicknesses of the one or more piezoelectric elements are adjustable to suppress a generation of a gap between the focus ring and the second region.
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公开(公告)号：US20220375777A1
公开(公告)日：2022-11-24
申请号：US17878912
申请日：2022-08-02
发明人： Naoyuki SATOH , Yasuharu SASAKI
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
摘要： A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first, elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.
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公开(公告)号：US20210327741A1
公开(公告)日：2021-10-21
申请号：US17273009
申请日：2019-09-03
IPC分类号： H01L21/683 , H01J37/32
摘要： A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.
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公开(公告)号：US20210305025A1
公开(公告)日：2021-09-30
申请号：US17190178
申请日：2021-03-02
摘要： The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
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