公开(公告)号：US20210233794A1

公开(公告)日：2021-07-29

申请号：US17232226

申请日：2021-04-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Daiki SATOH ,  Yasuharu SASAKI ,  Takashi NISHIJIMA ,  Jinyoung PARK

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

公开(公告)号：US20210074522A1

公开(公告)日：2021-03-11

申请号：US16952875

申请日：2020-11-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Naoki TAMARU ,  Yasuharu SASAKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.

公开(公告)号：US20190088523A1

公开(公告)日：2019-03-21

申请号：US16129941

申请日：2018-09-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Daiki SATOH ,  Yasuharu SASAKI ,  Takashi NISHIJIMA ,  Jinyoung PARK

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

公开(公告)号：US20230238225A1

公开(公告)日：2023-07-27

申请号：US18187805

申请日：2023-03-22

Applicant: Tokyo Electron Limited

Inventor： Shoichiro MATSUYAMA

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/3244 ,  H02N13/00 ,  H01J2237/334 ,  H01J2237/2007

Abstract: A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n≥2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object.

公开(公告)号：US20210126559A1

公开(公告)日：2021-04-29

申请号：US17077241

申请日：2020-10-22

Applicant: Tokyo Electron Limited

Inventor： Shoichiro MATSUYAMA

IPC: H02N13/00 ,  H01J37/32

Abstract: A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n≥2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object.

公开(公告)号：US20130220547A1

公开(公告)日：2013-08-29

申请号：US13767195

申请日：2013-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Etsuji ITO ,  Akihiro YOKOTA ,  Shinji HIMORI ,  Shoichiro MATSUYAMA

IPC: H01L21/465

CPC classification number: H01L21/465 ,  C23C14/35 ,  C23C14/351 ,  C23C14/352 ,  H01J37/32091 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3452 ,  H01L21/32136

Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

Abstract translation: 基板处理装置在供给高频电力的下电极与面向下电极的上电极之间的处理空间中产生电场，通过使用由下述电极产生的等离子体，对安装在下电极上的基板进行等离子体处理 电场。 处理空间中的等离子体密度的分布由通过控制设置在与处理空间相对的上电极的顶表面处设置的多个电磁体而产生的磁场来控制。

公开(公告)号：US20210366694A1

公开(公告)日：2021-11-25

申请号：US16644009

申请日：2019-06-03

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Shoichiro MATSUYAMA ,  Yohei UCHIDA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

公开(公告)号：US20210280397A1

公开(公告)日：2021-09-09

申请号：US17191085

申请日：2021-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichi KUROSAWA ,  Shoichiro MATSUYAMA ,  Yasuharu SASAKI ,  Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber, a stage, a semiconductive ring, a power source, at least one conductive member, and a conductive layer. The chamber has a plasma processing space. The stage is disposed in the plasma processing space and has an electrostatic chuck. The semiconductive ring is disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face. The at least one conductive member is disposed in the stage and in electrical connection with the power source. The conductive layer is disposed on the first face of the semiconductive ring and in electrical connection with the at least one conductive member.

公开(公告)号：US20210175051A1

公开(公告)日：2021-06-10

申请号：US17104467

申请日：2020-11-25

Applicant: Tokyo Electron Limited

Inventor： Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: An edge ring that is placed on an electrostatic chuck of a substrate processing apparatus so as to surround a periphery of a substrate is provided. Multiple contact portions are provided on a lower surface of the edge ring, and each of the contact portions is of a ring shape. Each of the contact portions is in line contact with a mounting surface of the electrostatic chuck.

公开(公告)号：US20240347322A1

公开(公告)日：2024-10-17

申请号：US18751991

申请日：2024-06-24

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Shoichiro MATSUYAMA ,  Yohei UCHIDA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68757

Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.