公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

公开(公告)号：US20240429073A1

公开(公告)日：2024-12-26

申请号：US18710214

申请日：2022-11-02

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Yasutaka MIZOMOTO

IPC: H01L21/67 ,  B24B7/22 ,  G05B19/4099 ,  H01L21/683

Abstract: A processing system configured to process multiple chips includes a chip placing apparatus configured to pick the chip up and dispose on an attraction surface of a first electrostatic carrier. The chip placing apparatus includes a placement carrier holder configured to hold the first electrostatic carrier; and a power supply configured to apply a voltage to the first electrostatic carrier held by the placement carrier holder.

公开(公告)号：US20230086738A1

公开(公告)日：2023-03-23

申请号：US17759517

申请日：2021-01-21

Applicant: Tokyo Electron Limited

Inventor： Tokutarou HAYASHI ,  Yoshitaka OTSUKA ,  Yasutaka MIZOMOTO ,  Kazuya IKEUE ,  Munehisa KODAMA

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/68

Abstract: A bonding apparatus is configured to bond a first substrate and a second substrate to prepare a combined substrate. The first substrate includes a base substrate, and a device layer formed on a surface of the base substrate facing the second substrate. The bonding apparatus includes a first holder configured to hold the first substrate; a second holder configured to hold the second substrate; a moving unit configured to move the first holder and the second holder relative to each other; and a total thickness measurement controller configured to control a thickness detector, which is configured to measure a total thickness of the combined substrate, to measure the total thickness at multiple points.

公开(公告)号：US20230023577A1

公开(公告)日：2023-01-26

申请号：US17788776

申请日：2020-12-09

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE ,  Yasutaka MIZOMOTO

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/67

Abstract: A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

公开(公告)号：US20220270926A1

公开(公告)日：2022-08-25

申请号：US17631900

申请日：2020-07-20

Applicant: Tokyo Electron Limited

Inventor： Yasutaka MIZOMOTO

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/02

Abstract: A substrate processing method includes preparing a stacked substrate including a first substrate divided into multiple chips, a protective film divided for each of the multiple chips to protect the chip, a second substrate supporting the first substrate, and an adhesive film configured to attach the protective film and the second substrate; reducing adhesive strength of the adhesive film with a light beam configured to penetrate the second substrate; and picking-up, from the adhesive film by a pick-up device, the chip and the protective film with the reduced adhesive strength to the adhesive film.

公开(公告)号：US20220223475A1

公开(公告)日：2022-07-14

申请号：US17595658

申请日：2020-05-11

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/67 ,  H01L21/306

Abstract: A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.